S. Pendharkar
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- Silicon Carbide Semiconductor Technologies 62
- Advancements in Semiconductor Devices and Circuit Design 52
- Semiconductor materials and devices 37
- Electrostatic Discharge in Electronics 24
- Electromagnetic Compatibility and Noise Suppression 10
- Integrated Circuits and Semiconductor Failure Analysis 5
- Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 8
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- Semiconductor materials and interfaces 9
- Cited by
- Electrical and Electronic EngineeringCondensed Matter PhysicsElectronic, Optical and Magnetic Materials
- Journals
- IEEE Transactions on Electron Devices (15 papers)Solid-State Electronics (4 papers)IEEE Electron Device Letters (2 papers)
- Partner nations
- United StatesItalyGermany
In The Last Decade
S. Pendharkar
76 papers receiving 889 citations
Peers
Comparison fields: 5 of 26
- Electrical and Electronic Engineering 903
- Condensed Matter Physics 149
- Electronic, Optical and Magnetic Materials 35
- Atomic and Molecular Physics, and Optics 31
- Software 3
Countries citing papers authored by S. Pendharkar
This map shows the geographic impact of S. Pendharkar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Pendharkar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Pendharkar more than expected).
Fields of papers citing papers by S. Pendharkar
This network shows the impact of papers produced by S. Pendharkar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Pendharkar. The network helps show where S. Pendharkar may publish in the future.
Co-authorship network
The 25 scholars most cited alongside S. Pendharkar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2019 | 15 | |
| 2 | 2017 | 10 | |
| 3 | 2016 | 38 | |
| 4 | 2015 | 6 | |
| 5 | 2014 | 41 | |
| 6 | 2013 | 5 | |
| 7 | 2012 | 0 | |
| 8 | 2011 | 18 | |
| 9 | 2011 | 8 | |
| 10 | 2011 | 16 | |
| 11 | Improving surface bipolar activity in thin gate oxide DE-NMOS — A critical HV I/O protection element for nano-meter scale technologies | 2010 | 2 |
| 12 | Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor | 2010 | 18 |
| 13 | 2010 | 5 | |
| 14 | 2010 | 17 | |
| 15 | 2007 | 0 | |
| 16 | 2005 | 9 | |
| 17 | 2004 | 15 | |
| 18 | 2002 | 3 | |
| 19 | 2002 | 1 | |
| 20 | 1997 | 15 |
About S. Pendharkar
S. Pendharkar is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Mechanical Engineering, having authored 81 papers that have together received 933 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (62 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers), Semiconductor materials and devices (37 papers), Electrostatic Discharge in Electronics (24 papers), Electromagnetic Compatibility and Noise Suppression (10 papers), Semiconductor materials and interfaces (9 papers), GaN-based semiconductor devices and materials (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (903 citations), Condensed Matter Physics (149 citations), Electronic, Optical and Magnetic Materials (35 citations), Atomic and Molecular Physics, and Optics (31 citations) and Software (3 citations). S. Pendharkar has collaborated with scholars based in United States, Italy and Germany. Frequent co-authors include K. Shenai, T. Efland, M. Trivedi, Jungwoo Joh, P.L. Hower, Elena Gnani, R. Wise, G. Baccarani, A. Gnudi and Susanna Reggiani. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, IEEE Electron Device Letters, IEEE Transactions on Power Electronics and Journal of Applied Physics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.