Huaxing Jiang

1.6k citations

56 papers · 1.3k indexed · h-index 21

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 48
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 37
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 26
- Silicon Carbide Semiconductor Technologies 11
- Radio Frequency Integrated Circuit Design 4
Materials Chemistry top 10%
- ZnO doping and properties 11
Renewable Energy, Sustainability and the Environment top 10%
- Advanced Photocatalysis Techniques 4
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 10

Co-authors: Kei May Lau Xing Lü Chak Wah TangChao LiuKar Wei NgGang WangZimin Chen Yanli Pei
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (7 papers)Optics Letters (1 paper)Optics Express (1 paper)
Partner nations: Hong Kong China Macao

In The Last Decade

Huaxing Jiang

51 papers receiving 1.2k citations

Peers

Countries citing papers authored by Huaxing Jiang

Since Specialization

Citations

This map shows the geographic impact of Huaxing Jiang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Huaxing Jiang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Huaxing Jiang more than expected).

Fields of papers citing papers by Huaxing Jiang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Huaxing Jiang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Huaxing Jiang. The network helps show where Huaxing Jiang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Huaxing Jiang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Huaxing Jiang Line = papers co-authored together Huaxing Jiang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	3D-simulation design of a high current capacity GaN tri-gate power device with integrated parasitic bipolar junction Semiconductor Science and Technology ·Chuan Song,Wen Yang,Huaxing Jiang,Bin Li	2024	1
2	Band alignment and electrical properties of NiO/β-Ga2O3 heterojunctions with different β-Ga2O3 orientations Applied Surface Science ·Yuxin Deng,Ziqi Yang,Tongling Xu,Huaxing Jiang,Kar Wei Ng,Chao Liao,Danni Su,Yanli Pei,Zimin Chen,Gang Wang,Xing Lü	2023	41
3	Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer IEEE Journal of the Electron Devices Society ·Yu Zhang,Lihua Xu,Yitian Gu,Haowen Guo,Huaxing Jiang,Kei May Lau,Xinbo Zou	2022	6
4	GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A Applied Physics Express ·Renqiang Zhu,Huaxing Jiang,Chak Wah Tang,Kei May Lau	2022	11
5	A 24-41 GHz GaN Low-Noise Amplifier with Cascode Structure and Multi-Stage Load Shuixi Chen,Zhijian Chen,Bin Li,Huaxing Jiang	2022	1
6	Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors Semiconductor Science and Technology ·Huaxing Jiang,Renqiang Zhu,Qifeng Lyu,Chak Wah Tang,Kei May Lau	2020	12
7	Leakage Current Reduction in β-Ga₂O₃ Schottky Barrier Diodes by CF₄ Plasma Treatment IEEE Electron Device Letters ·Haoxun Luo,Huaxing Jiang,Zimin Chen,Yanli Pei,Qian Feng,Hong Zhou,Xing Lü,Kei May Lau,Gang Wang	2020	31
8	Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K IEEE Journal of the Electron Devices Society ·Yangqian Wang,Yitian Gu,Xing Lü,Huaxing Jiang,Haowen Guo,Baile Chen,Kei May Lau,Xinbo Zou	2020	11
9	Monolithic integration of GaN LEDs with vertical driving MOSFETs by selective area growth and band engineering of the p-AlGaN electron blocking layer though TCAD simulation Semiconductor Science and Technology ·Xing Lü,Song Yang,Huaxing Jiang,Jin Wu	2019	8
10	High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Qifeng Lyu,Huaxing Jiang,Xing Lü,Kei May Lau	2019	0
11	Vertical Schottky barrier diodes based on a bulk $\beta$ -Ga₂O₃ substrate with high switching performance Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Xing Lü,Xu Zhang,Huaxing Jiang,Xinbo Zou,Kei May Lau	2019	2
12	A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor IEEE Electron Device Letters ·Jie Ren,Chak Wah Tang,Hao Feng,Huaxing Jiang,Wentao Yang,Xianda Zhou,Kei May Lau,J.K.O. Sin	2018	16
13	Experimental characterization of the fully integrated Si-GaN cascoded FET Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Jie Ren,Chak Wah Tang,Hao Feng,Huaxing Jiang,Wentao Yang,Xianda Zhou,Kei May Lau,J.K.O. Sin	2018	3
14	Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiN_{<italic>x</italic>}as Gate Dielectric IEEE Transactions on Electron Devices ·Xing Lü,Kun Yu,Huaxing Jiang,Anping Zhang,Kei May Lau	2017	74
15	Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate Applied Physics Express ·Xing Lü,Chao Liu,Huaxing Jiang,Xinbo Zou,Anping Zhang,Kei May Lau	2016	16
16	Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Tongde Huang,Chao Liu,Johan Bergsten,Huaxing Jiang,Kei May Lau,Niklas Rorsman	2016	4
17	Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure Applied Physics Letters ·Xing Lü,Chao Liu,Huaxing Jiang,Xinbo Zou,Anping Zhang,Kei May Lau	2016	32
18	Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric IEEE Transactions on Electron Devices ·Xing Lü,Jun Ma,Huaxing Jiang,Chao Liu,Peiqiang Xu,Kei May Lau	2015	24
19	In situ SiN_x gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si physica status solidi (a) ·Xing Lü,Jun Ma,Zhaojun Liu,Huaxing Jiang,Tongde Huang,Kei May Lau	2014	12
20	Microwave power thin film resistors for high frequency and high power load applications Applied Physics Letters ·Huaxing Jiang,Xiaotong Si,Wenhui Zhang,Chaofeng Wang,Bing Peng,Yanrong Li	2010	1

About Huaxing Jiang

Huaxing Jiang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 56 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (37 papers), Semiconductor materials and devices (26 papers), Silicon Carbide Semiconductor Technologies (11 papers), ZnO doping and properties (11 papers), Semiconductor Quantum Structures and Devices (10 papers), Radio Frequency Integrated Circuit Design (4 papers) and Advanced Photocatalysis Techniques (4 papers). The work is most often cited by research in Condensed Matter Physics (864 citations), Electronic, Optical and Magnetic Materials (809 citations) and Electrical and Electronic Engineering (709 citations). Huaxing Jiang has collaborated with scholars based in Hong Kong, China and Macao. Frequent co-authors include Kei May Lau, Xing Lü, Chak Wah Tang, Chao Liu, Kar Wei Ng, Gang Wang, Chao Liu, Zimin Chen, Yanli Pei and Xinbo Zou. Their work appears in journals such as Applied Physics Letters, Optics Letters and Optics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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