Huaxing Jiang

1.6k total citations
56 papers, 1.3k citations indexed

About

Huaxing Jiang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Huaxing Jiang has authored 56 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Condensed Matter Physics, 38 papers in Electronic, Optical and Magnetic Materials and 37 papers in Electrical and Electronic Engineering. Recurrent topics in Huaxing Jiang's work include GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (37 papers) and Semiconductor materials and devices (26 papers). Huaxing Jiang is often cited by papers focused on GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (37 papers) and Semiconductor materials and devices (26 papers). Huaxing Jiang collaborates with scholars based in Hong Kong, China and Macao. Huaxing Jiang's co-authors include Kei May Lau, Xing Lü, Chak Wah Tang, Chao Liu, Kar Wei Ng, Gang Wang, Chao Liu, Zimin Chen, Yanli Pei and Xinbo Zou and has published in prestigious journals such as Applied Physics Letters, Optics Letters and Optics Express.

In The Last Decade

Huaxing Jiang

51 papers receiving 1.2k citations

Peers

Huaxing Jiang
Baoshun Zhang China
Serdal Okur United States
Jingan Zhou United States
Sanyam Bajaj United States
Shibin Krishna India
Junxue Ran China
Debdeep Jena United States
Chongbiao Luan China
Baoshun Zhang China
Huaxing Jiang
Citations per year, relative to Huaxing Jiang Huaxing Jiang (= 1×) peers Baoshun Zhang

Countries citing papers authored by Huaxing Jiang

Since Specialization
Citations

This map shows the geographic impact of Huaxing Jiang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Huaxing Jiang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Huaxing Jiang more than expected).

Fields of papers citing papers by Huaxing Jiang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Huaxing Jiang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Huaxing Jiang. The network helps show where Huaxing Jiang may publish in the future.

Co-authorship network of co-authors of Huaxing Jiang

This figure shows the co-authorship network connecting the top 25 collaborators of Huaxing Jiang. A scholar is included among the top collaborators of Huaxing Jiang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Huaxing Jiang. Huaxing Jiang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jiang, Huaxing, et al.. (2024). 3D-simulation design of a high current capacity GaN tri-gate power device with integrated parasitic bipolar junction. Semiconductor Science and Technology. 40(1). 15001–15001. 1 indexed citations
2.
Yang, Ziqi, Huaxing Jiang, Kar Wei Ng, et al.. (2023). Band alignment and electrical properties of NiO/β-Ga2O3 heterojunctions with different β-Ga2O3 orientations. Applied Surface Science. 622. 156917–156917. 41 indexed citations
3.
Zhang, Yu, et al.. (2022). Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer. IEEE Journal of the Electron Devices Society. 10. 540–546. 6 indexed citations
4.
Jiang, Huaxing, et al.. (2022). GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A. Applied Physics Express. 15(12). 121004–121004. 11 indexed citations
5.
Chen, Zhijian, et al.. (2022). A 24-41 GHz GaN Low-Noise Amplifier with Cascode Structure and Multi-Stage Load. 1–3. 1 indexed citations
6.
Jiang, Huaxing, et al.. (2020). Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors. Semiconductor Science and Technology. 36(3). 34001–34001. 12 indexed citations
7.
Jiang, Huaxing, Zimin Chen, Yanli Pei, et al.. (2020). Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment. IEEE Electron Device Letters. 41(9). 1312–1315. 31 indexed citations
8.
Lü, Xing, Huaxing Jiang, Haowen Guo, et al.. (2020). Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K. IEEE Journal of the Electron Devices Society. 8. 850–856. 11 indexed citations
9.
Lü, Xing, Song Yang, Huaxing Jiang, & Jin Wu. (2019). Monolithic integration of GaN LEDs with vertical driving MOSFETs by selective area growth and band engineering of the p-AlGaN electron blocking layer though TCAD simulation. Semiconductor Science and Technology. 34(6). 64002–64002. 8 indexed citations
10.
Jiang, Huaxing, et al.. (2019). High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 42. 1–2.
11.
Lü, Xing, Xu Zhang, Huaxing Jiang, Xinbo Zou, & Kei May Lau. (2019). Vertical Schottky barrier diodes based on a bulk $\beta$ -Ga2O3 substrate with high switching performance. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1–1. 2 indexed citations
12.
Tang, Chak Wah, Hao Feng, Huaxing Jiang, et al.. (2018). A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor. IEEE Electron Device Letters. 39(3). 394–396. 16 indexed citations
13.
Tang, Chak Wah, Hao Feng, Huaxing Jiang, et al.. (2018). Experimental characterization of the fully integrated Si-GaN cascoded FET. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 28. 216–219. 3 indexed citations
14.
Lü, Xing, et al.. (2017). Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiN<italic>x</italic>as Gate Dielectric. IEEE Transactions on Electron Devices. 64(3). 824–831. 74 indexed citations
15.
Lü, Xing, Chao Liu, Huaxing Jiang, et al.. (2016). Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate. Applied Physics Express. 9(3). 31001–31001. 16 indexed citations
16.
Huang, Tongde, Chao Liu, Johan Bergsten, et al.. (2016). Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 36. 1–2. 4 indexed citations
17.
Lü, Xing, Chao Liu, Huaxing Jiang, et al.. (2016). Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure. Applied Physics Letters. 109(5). 32 indexed citations
18.
Lü, Xing, et al.. (2015). Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With <italic>In Situ</italic> SiN<sub><italic>x</italic></sub> Gate Dielectric. IEEE Transactions on Electron Devices. 62(6). 1862–1869. 24 indexed citations
19.
Lü, Xing, Jun Ma, Zhaojun Liu, et al.. (2014). In situ SiNx gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si. physica status solidi (a). 211(4). 775–778. 12 indexed citations
20.
Jiang, Huaxing, et al.. (2010). Microwave power thin film resistors for high frequency and high power load applications. Applied Physics Letters. 97(17). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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