Pil Sung Park

1.2k citations

21 papers · 1.0k indexed · h-index 15

Condensed Matter Physics top 2%
Electrical and Electronic Engineering top 10%
Materials Chemistry top 10%
Electronic, Optical and Magnetic Materials top 5%
Atomic and Molecular Physics, and Optics top 10%

Co-authors: Siddharth Rajan Digbijoy N. Nath Sriram Krishnamoorthy Fatih Akyol Ting-Hsiang Hung Michele Esposto Yiying Wu Santhakumar Kannappan
Topics: GaN-based semiconductor devices and materials (18 papers)Ga2O3 and related materials (10 papers)ZnO doping and properties (8 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Nano Letters Applied Physics Letters Journal of Applied Physics
Partner nations: United States Türkiye South Korea

In The Last Decade

Pil Sung Park

21 papers receiving 975 citations

Peers

Countries citing papers authored by Pil Sung Park

Since Specialization

Citations

This map shows the geographic impact of Pil Sung Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pil Sung Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pil Sung Park more than expected).

Fields of papers citing papers by Pil Sung Park

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pil Sung Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pil Sung Park. The network helps show where Pil Sung Park may publish in the future.

Co-authorship network of co-authors of Pil Sung Park

This figure shows the co-authorship network connecting the top 25 collaborators of Pil Sung Park. A scholar is included among the top collaborators of Pil Sung Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pil Sung Park. Pil Sung Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity 2017 ·IEEE Transactions on Electron Devices ·Sanyam Bajaj,(unknown),Fatih Akyol,Pil Sung Park,Yuewei Zhang,(unknown),Sriram Krishnamoorthy,David J. Meyer,Siddharth Rajan	67
2	Small-signal characteristics of graded AlGaN channel PolFETs 2017 ·Sanyam Bajaj,(unknown),Fatih Akyol,Pil Sung Park,Yuewei Zhang,Shahadat H. Sohel,Sriram Krishnamoorthy,David J. Meyer,Siddharth Rajan	2
3	Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs 2015 ·IEEE Electron Device Letters ·Pil Sung Park,Sriram Krishnamoorthy,Sanyam Bajaj,Digbijoy N. Nath,Siddharth Rajan	17
4	Lateral energy band engineering of Al<inf>2</inf>O<inf>3</inf>/III-nitride interfaces 2014 ·Ting-Hsiang Hung,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Sanyam Bajaj,Siddharth Rajan	1
5	Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3 2014 ·Applied Physics Letters ·Ting-Hsiang Hung,Kohei Sasaki,Akito Kuramata,Digbijoy N. Nath,Pil Sung Park,(unknown),Siddharth Rajan	47
6	Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs 2014 ·IEEE Electron Device Letters ·Ting-Hsiang Hung,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Siddharth Rajan	88
7	Advanced Channel Engineering in III-Nitride HEMTs for High Frequency Performance 2013 ·OhioLink ETD Center (Ohio Library and Information Network) ·Pil Sung Park	1
8	Electrical Properties of Graphene/AlGaN/GaN Heterostructures 2013 ·arXiv (Cornell University) ·Pil Sung Park,K. M. Reddy,Digbijoy N. Nath,Nitin P. Padture,Siddharth Rajan	1
9	Large area single crystal (0001) oriented MoS2 2013 ·Applied Physics Letters ·Masihhur R. Laskar,Lu Ma,Santhakumar Kannappan,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Wu Lu,Yiying Wu,Siddharth Rajan	197
10	Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion 2013 ·Applied Physics Letters ·Pil Sung Park,K. M. Reddy,Digbijoy N. Nath,Zhichao Yang,Nitin P. Padture,Siddharth Rajan	26
11	GdN Nanoisland-Based GaN Tunnel Junctions 2013 ·Nano Letters ·Sriram Krishnamoorthy,Thomas F. Kent,Jing Yang,Pil Sung Park,Roberto C. Myers,Siddharth Rajan	47
12	Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces 2013 ·Applied Physics Letters ·Ting-Hsiang Hung,Sriram Krishnamoorthy,Michele Esposto,Digbijoy N. Nath,Pil Sung Park,Siddharth Rajan	78
13	“Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]” 2012 ·Journal of Applied Physics ·Digbijoy N. Nath,Pil Sung Park,Michele Esposto,David F. Brown,S. Keller,Umesh K. Mishra,Siddharth Rajan	1
14	Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization 2012 ·Applied Physics Letters ·Pil Sung Park,Digbijoy N. Nath,Sriram Krishnamoorthy,Siddharth Rajan	39
15	Polarization engineered 1-dimensional electron gas arrays 2012 ·Journal of Applied Physics ·Digbijoy N. Nath,Pil Sung Park,Michele Esposto,David F. Brown,S. Keller,Umesh K. Mishra,Siddharth Rajan	6
16	Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures 2012 ·IEEE Electron Device Letters ·Pil Sung Park,Digbijoy N. Nath,Siddharth Rajan	19
17	N-Polar III–Nitride Green (540 nm) Light Emitting Diode 2011 ·Japanese Journal of Applied Physics ·Fatih Akyol,Digbijoy N. Nath,Emre Gür,Pil Sung Park,Siddharth Rajan	34
18	N-Polar III–Nitride Green (540 nm) Light Emitting Diode 2011 ·Japanese Journal of Applied Physics ·Fatih Akyol,Digbijoy N. Nath,Emre Gür,Pil Sung Park,Siddharth Rajan	67
19	Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs 2011 ·IEEE Transactions on Electron Devices ·Pil Sung Park,Siddharth Rajan	74
20	Polarization-engineered GaN/InGaN/GaN tunnel diodes 2010 ·Applied Physics Letters ·Sriram Krishnamoorthy,Digbijoy N. Nath,Fatih Akyol,Pil Sung Park,Michele Esposto,Siddharth Rajan	129

About Pil Sung Park

Pil Sung Park is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 21 papers that have together received 1.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (10 papers) and ZnO doping and properties (8 papers). The work is most often cited by research in Condensed Matter Physics (685 citations), Electronic, Optical and Magnetic Materials (432 citations) and Materials Chemistry (448 citations). Pil Sung Park has collaborated with scholars based in United States, Türkiye and South Korea. Frequent co-authors include Siddharth Rajan, Digbijoy N. Nath, Sriram Krishnamoorthy, Fatih Akyol, Ting-Hsiang Hung, Michele Esposto, Yiying Wu, Santhakumar Kannappan, Masihhur R. Laskar and Wu Lu. Their work appears in journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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