Nobumitsu Hirose

585 total citations
49 papers, 450 citations indexed

About

Nobumitsu Hirose is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Nobumitsu Hirose has authored 49 papers receiving a total of 450 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 15 papers in Condensed Matter Physics. Recurrent topics in Nobumitsu Hirose's work include Semiconductor materials and devices (18 papers), Photonic and Optical Devices (12 papers) and Semiconductor Quantum Structures and Devices (12 papers). Nobumitsu Hirose is often cited by papers focused on Semiconductor materials and devices (18 papers), Photonic and Optical Devices (12 papers) and Semiconductor Quantum Structures and Devices (12 papers). Nobumitsu Hirose collaborates with scholars based in Japan, France and United States. Nobumitsu Hirose's co-authors include Toshiaki Matsui, Takashi Mimura, Akifumi Kasamatsu, Yoshiyuki Suda, Takahiro Tsukamoto, Masataka Higashiwaki, Norio Onojima, Hiroaki Hanafusa, Ronan Sauleau and Umesh K. Mishra and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and The Journal of Physical Chemistry C.

In The Last Decade

Nobumitsu Hirose

47 papers receiving 441 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nobumitsu Hirose Japan 13 350 171 170 121 103 49 450
P. Prajoon India 14 483 1.4× 297 1.7× 150 0.9× 125 1.0× 106 1.0× 39 606
H. Gräbeldinger Germany 9 250 0.7× 125 0.7× 294 1.7× 56 0.5× 101 1.0× 16 387
Vladimir V. Talanov United States 9 148 0.4× 170 1.0× 97 0.6× 93 0.8× 50 0.5× 37 324
S. N. Yurkov Russia 12 568 1.6× 222 1.3× 257 1.5× 85 0.7× 107 1.0× 42 689
H. Takahashi Japan 14 413 1.2× 195 1.1× 183 1.1× 100 0.8× 109 1.1× 55 520
Lorenzo Lugani Switzerland 13 274 0.8× 268 1.6× 136 0.8× 140 1.2× 101 1.0× 21 404
Chih-Wei Yang Taiwan 12 409 1.2× 227 1.3× 66 0.4× 117 1.0× 64 0.6× 53 461
D. I. Merkurisov Russia 11 217 0.6× 296 1.7× 78 0.5× 209 1.7× 82 0.8× 24 361
Tongde Huang China 13 442 1.3× 371 2.2× 133 0.8× 189 1.6× 156 1.5× 44 586
M. Koike Japan 9 293 0.8× 62 0.4× 190 1.1× 63 0.5× 145 1.4× 34 423

Countries citing papers authored by Nobumitsu Hirose

Since Specialization
Citations

This map shows the geographic impact of Nobumitsu Hirose's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nobumitsu Hirose with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nobumitsu Hirose more than expected).

Fields of papers citing papers by Nobumitsu Hirose

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nobumitsu Hirose. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nobumitsu Hirose. The network helps show where Nobumitsu Hirose may publish in the future.

Co-authorship network of co-authors of Nobumitsu Hirose

This figure shows the co-authorship network connecting the top 25 collaborators of Nobumitsu Hirose. A scholar is included among the top collaborators of Nobumitsu Hirose based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nobumitsu Hirose. Nobumitsu Hirose is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Tsukamoto, Takahiro, et al.. (2022). Increasing the critical thickness of SiGe layers on Si substrates using sputter epitaxy method. Journal of Crystal Growth. 600. 126900–126900. 5 indexed citations
3.
Tsukamoto, Takahiro, et al.. (2022). Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method. Journal of Crystal Growth. 604. 127045–127045. 4 indexed citations
4.
Tsukamoto, Takahiro, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, & Yoshiyuki Suda. (2021). Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy. Thin Solid Films. 726. 138646–138646. 6 indexed citations
5.
Maeda, Yuki, Takahiro Tsukamoto, Nobumitsu Hirose, et al.. (2020). Hole-tunneling Si 0.82 Ge 0.18 /Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission. Japanese Journal of Applied Physics. 59(8). 80903–80903. 5 indexed citations
6.
Tsukamoto, Takahiro, Nobumitsu Hirose, Akifumi Kasamatsu, et al.. (2015). Control of surface flatness of Ge layers directly grown on Si (001) substrates by DC sputter epitaxy method. Thin Solid Films. 592. 34–38. 11 indexed citations
7.
Tsukamoto, Takahiro, Nobumitsu Hirose, Akifumi Kasamatsu, et al.. (2015). Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method. Journal of Materials Science. 50(12). 4366–4370. 37 indexed citations
8.
Hanafusa, Hiroaki, Nobumitsu Hirose, Akifumi Kasamatsu, et al.. (2012). Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy. Japanese Journal of Applied Physics. 51(5R). 55502–55502. 7 indexed citations
9.
Hanafusa, Hiroaki, Nobumitsu Hirose, Akifumi Kasamatsu, et al.. (2011). Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy. Applied Physics Express. 4(2). 25701–25701. 14 indexed citations
10.
Hanafusa, Hiroaki, Nobumitsu Hirose, Akifumi Kasamatsu, et al.. (2011). Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers. Applied Physics Express. 4(2). 24102–24102. 13 indexed citations
11.
Sakuraba, Yuya, Nobumitsu Hirose, Mikihiko Oogane, et al.. (2010). Co-concentration dependence of half-metallic properties in Co–Mn–Si epitaxial films. Applied Physics Letters. 96(9). 9 indexed citations
12.
Watanabe, Issei, et al.. (2009). Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band. IEICE Technical Report; IEICE Tech. Rep.. 109(288). 151–155. 1 indexed citations
13.
Matsui, Toshiaki, et al.. (2008). Wireless system technologies and millimeter-wave device research. IEICE Technical Report; IEICE Tech. Rep.. 108(369). 33–34.
14.
Onojima, Norio, et al.. (2008). C–V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures. Applied Surface Science. 254(19). 6162–6164. 1 indexed citations
15.
Higashiwaki, Masataka, Nobumitsu Hirose, & Toshiaki Matsui. (2005). Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers. IEEE Electron Device Letters. 26(3). 139–141. 57 indexed citations
16.
Matsui, Toshiaki, et al.. (2002). Dielectric loaded Gaussian beam oscillator in the 40 GHz band. 35. 75–78. 1 indexed citations
17.
Shinohara, K., Y. Yamashita, K. Hikosaka, et al.. (2000). Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications. 3 indexed citations
18.
Anda, Yoshiharu, et al.. (1999). Novel fabrication technique for 0.1 μm T-shaped gate with i-line negative resist and poly(methylmethacrylate). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(2). 320–322. 2 indexed citations
19.
Hirose, Nobumitsu, et al.. (1988). Basic characteristics of the planar Josephson triode. IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences. 71(7). 646–647. 1 indexed citations
20.
Hirose, Nobumitsu, Yasutaka Uchida, & Masakiyo Matsumura. (1985). Two-Dimensional Numerical Analysis of Amorphous-Silicon Field-Effect Transistors. Japanese Journal of Applied Physics. 24(2R). 200–200. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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