I. N. Arsentyev

556 total citations
51 papers, 400 citations indexed

About

I. N. Arsentyev is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, I. N. Arsentyev has authored 51 papers receiving a total of 400 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Atomic and Molecular Physics, and Optics, 29 papers in Electrical and Electronic Engineering and 17 papers in Condensed Matter Physics. Recurrent topics in I. N. Arsentyev's work include Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and interfaces (24 papers) and GaN-based semiconductor devices and materials (17 papers). I. N. Arsentyev is often cited by papers focused on Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and interfaces (24 papers) and GaN-based semiconductor devices and materials (17 papers). I. N. Arsentyev collaborates with scholars based in Russia, Mexico and Germany. I. N. Arsentyev's co-authors include П. В. Середин, I. S. Tarasov, D. A. Vinokurov, É. P. Domashevskaya, A. S. Lenshin, A. L. Stankevich, T. Prutskij, D. N. Nikolaev, В. М. Кашкаров and D. L. Goloshchapov and has published in prestigious journals such as Applied Surface Science, Physica B Condensed Matter and Materials Science and Engineering B.

In The Last Decade

I. N. Arsentyev

47 papers receiving 397 citations

Peers

I. N. Arsentyev
H. Gräbeldinger Germany
P.J. van der Wel Netherlands
P. Stauß Germany
V.A. Elyukhin Mexico
T. Schupp Germany
A.M. Keir United Kingdom
M. G. Mil’vidskiĭ Russia
T. Hakkarainen Finland
L. J. Chen Taiwan
Tobias Meisch Germany
H. Gräbeldinger Germany
I. N. Arsentyev
Citations per year, relative to I. N. Arsentyev I. N. Arsentyev (= 1×) peers H. Gräbeldinger

Countries citing papers authored by I. N. Arsentyev

Since Specialization
Citations

This map shows the geographic impact of I. N. Arsentyev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. N. Arsentyev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. N. Arsentyev more than expected).

Fields of papers citing papers by I. N. Arsentyev

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. N. Arsentyev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. N. Arsentyev. The network helps show where I. N. Arsentyev may publish in the future.

Co-authorship network of co-authors of I. N. Arsentyev

This figure shows the co-authorship network connecting the top 25 collaborators of I. N. Arsentyev. A scholar is included among the top collaborators of I. N. Arsentyev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. N. Arsentyev. I. N. Arsentyev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Середин, П. В., D. L. Goloshchapov, I. N. Arsentyev, et al.. (2021). Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon. Semiconductors. 55(1). 122–131. 1 indexed citations
2.
Середин, П. В., et al.. (2021). HVPE fabrication of GaN sub-micro pillars on preliminarily treated Si(001) substrate. Optical Materials. 117. 111130–111130. 7 indexed citations
3.
Середин, П. В., D. L. Goloshchapov, A. S. Lenshin, et al.. (2020). Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates. Semiconductors. 54(5). 596–608. 2 indexed citations
4.
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6.
Середин, П. В., D. L. Goloshchapov, A. S. Lenshin, et al.. (2018). Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy. Semiconductors. 52(8). 1012–1021. 3 indexed citations
7.
Середин, П. В., A. S. Lenshin, I. N. Arsentyev, et al.. (2017). Experimental studies of the effects of atomic ordering in epitaxial Ga x In1–x P alloys on their structural and morphological properties. Semiconductors. 51(8). 1087–1092. 2 indexed citations
8.
Середин, П. В., et al.. (2016). Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates. Physica B Condensed Matter. 495. 54–63. 25 indexed citations
9.
Берт, Н. А., Demid A. Kirilenko, S. O. Slipchenko, et al.. (2015). Properties of AlN films deposited by reactive ion-plasma sputtering. Semiconductors. 49(10). 1383–1387. 9 indexed citations
10.
Середин, П. В., A. S. Lenshin, I. N. Arsentyev, et al.. (2014). Structural and optical properties of heavily doped Al x Ga1 − x As1 − y P y :Mg alloys produced by metal-organic chemical vapor deposition. Semiconductors. 48(8). 1094–1102. 7 indexed citations
11.
Середин, П. В., A. S. Lenshin, I. N. Arsentyev, et al.. (2014). Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys. Semiconductors. 48(1). 21–29. 22 indexed citations
12.
Середин, П. В., et al.. (2013). Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys. Semiconductors. 47(1). 1–6. 16 indexed citations
13.
Середин, П. В., et al.. (2010). Raman investigation of low temperature AlGaAs/GaAs(100) heterostructures. Physica B Condensed Matter. 405(12). 2694–2696. 20 indexed citations
14.
Середин, П. В., et al.. (2010). The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures. Semiconductors. 44(2). 184–188. 17 indexed citations
15.
Середин, П. В., É. P. Domashevskaya, I. N. Arsentyev, et al.. (2009). Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga x In1 − x P/GaAs(100) heterostructures. Semiconductors. 43(9). 1221–1225. 5 indexed citations
16.
Arsentyev, I. N., A. V. Bobyl, I. S. Tarasov, et al.. (2008). Properties of barrier contacts with nanosize TiB x layers to InP. Semiconductors. 42(7). 777–782. 1 indexed citations
17.
Pikhtin, N. A., S. O. Slipchenko, Z. N. Sokolova, et al.. (2007). Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6731. 673103–673103. 5 indexed citations
18.
Domashevskaya, É. P., П. В. Середин, А. Н. Лукин, et al.. (2006). XRD, AFM and IR investigations of ordered AlGaAs 2 phase in epitaxial Al x Ga 1– x As/GaAs (100) heterostructures. Surface and Interface Analysis. 38(4). 828–832. 19 indexed citations
19.
Arsentyev, I. N., et al.. (2005). Porous nanostructured InP: technology, properties, application. Semiconductor Physics Quantum Electronics & Optoelectronics. 8(4). 95–104. 5 indexed citations
20.
Arsentyev, I. N., et al.. (2005). New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis. Semiconductor Physics Quantum Electronics & Optoelectronics. 8(4). 105–114. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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