I. N. Arsentyev

556 citations

51 papers · 400 indexed · h-index 14

Co-authors: П. В. Середин I. S. Tarasov D. A. Vinokurov É. P. Domashevskaya A. S. Lenshin A. L. Stankevich T. Prutskij D. N. Nikolaev
Topics: Semiconductor Quantum Structures and Devices (33 papers)Semiconductor materials and interfaces (24 papers)GaN-based semiconductor devices and materials (17 papers)
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering
Journals: Applied Surface Science Physica B Condensed Matter Materials Science and Engineering B
Partner nations: Russia Mexico Germany

In The Last Decade

I. N. Arsentyev

47 papers receiving 397 citations

Peers

Countries citing papers authored by I. N. Arsentyev

Since Specialization

Citations

This map shows the geographic impact of I. N. Arsentyev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. N. Arsentyev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. N. Arsentyev more than expected).

Fields of papers citing papers by I. N. Arsentyev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. N. Arsentyev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. N. Arsentyev. The network helps show where I. N. Arsentyev may publish in the future.

Co-authorship network of co-authors of I. N. Arsentyev

This figure shows the co-authorship network connecting the top 25 collaborators of I. N. Arsentyev. A scholar is included among the top collaborators of I. N. Arsentyev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. N. Arsentyev. I. N. Arsentyev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon 2021 ·Semiconductors ·П. В. Середин,D. L. Goloshchapov,(unknown),I. N. Arsentyev,D. N. Nikolaev,N. A. Pikhtin,S. O. Slipchenko,H. Leiste	1
2	HVPE fabrication of GaN sub-micro pillars on preliminarily treated Si(001) substrate 2021 ·Optical Materials ·П. В. Середин,D. L. Goloshchapov,I. N. Arsentyev,(unknown),Igor Kasatkin,T. Prutskij	7
3	Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates 2020 ·Semiconductors ·П. В. Середин,D. L. Goloshchapov,(unknown),A. S. Lenshin,(unknown),A. M. Mizerov,(unknown),I. N. Arsentyev,(unknown),H. Leiste,С. А. Кукушкін	2
4	Effect of GaAs(100) substrate misorientation on structural, electronic, and optical properties of AlN nano-sized films obtained by reactive plasma-ion deposition 2019 ·Physica B Condensed Matter ·П. В. Середин,V. A. Terekhov,(unknown),I. N. Arsentyev,(unknown)	1
5	Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy 2019 ·Semiconductors ·П. В. Середин,A. S. Lenshin,(unknown),D. L. Goloshchapov,A. M. Mizerov,I. N. Arsentyev,(unknown)	1
6	Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy 2018 ·Semiconductors ·П. В. Середин,D. L. Goloshchapov,(unknown),A. S. Lenshin,А. Н. Лукин,(unknown),I. N. Arsentyev,(unknown),D. N. Nikolaev,N. A. Pikhtin	3
7	Experimental studies of the effects of atomic ordering in epitaxial Ga x In1–x P alloys on their structural and morphological properties 2017 ·Semiconductors ·П. В. Середин,A. S. Lenshin,(unknown),I. N. Arsentyev,(unknown),S. А. Mintairov,D. N. Nikolaev,T. Prutskij	2
8	Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates 2016 ·Physica B Condensed Matter ·П. В. Середин,В. М. Кашкаров,I. N. Arsentyev,(unknown),I. S. Tarasov	25
9	Properties of AlN films deposited by reactive ion-plasma sputtering 2015 ·Semiconductors ·Н. А. Берт,(unknown),(unknown),Demid A. Kirilenko,(unknown),(unknown),S. O. Slipchenko,(unknown),N. A. Pikhtin,(unknown),I. N. Arsentyev,I. S. Tarasov	9
10	Structural and optical properties of heavily doped Al x Ga1 − x As1 − y P y :Mg alloys produced by metal-organic chemical vapor deposition 2014 ·Semiconductors ·П. В. Середин,A. S. Lenshin,(unknown),I. N. Arsentyev,D. A. Vinokurov,I. S. Tarasov,T. Prutskij,H. Leiste,Monika Rinke	7
11	Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys 2014 ·Semiconductors ·П. В. Середин,(unknown),A. S. Lenshin,I. N. Arsentyev,D. A. Vinokurov,T. Prutskij,H. Leiste,(unknown)	22
12	Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys 2013 ·Semiconductors ·П. В. Середин,(unknown),I. N. Arsentyev,D. A. Vinokurov,A. L. Stankevich,T. Prutskij	16
13	Raman investigation of low temperature AlGaAs/GaAs(100) heterostructures 2010 ·Physica B Condensed Matter ·П. В. Середин,(unknown),É. P. Domashevskaya,I. N. Arsentyev,D. A. Vinokurov,I. S. Tarasov	20
14	The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures 2010 ·Semiconductors ·П. В. Середин,(unknown),É. P. Domashevskaya,I. N. Arsentyev,D. A. Vinokurov,I. S. Tarasov,(unknown)	17
15	Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga x In1 − x P/GaAs(100) heterostructures 2009 ·Semiconductors ·П. В. Середин,É. P. Domashevskaya,(unknown),(unknown),(unknown),(unknown),I. N. Arsentyev,D. A. Vinokurov,A. L. Stankevich,I. S. Tarasov	5
16	Properties of barrier contacts with nanosize TiB x layers to InP 2008 ·Semiconductors ·I. N. Arsentyev,A. V. Bobyl,I. S. Tarasov,Н. С. Болтовец,(unknown),A. E. Belyaev,(unknown),Р. В. Конакова,(unknown),P. M. Lytvyn,В. В. Миленин,(unknown)	1
17	Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping 2007 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown),N. A. Pikhtin,S. O. Slipchenko,Z. N. Sokolova,D. A. Vinokurov,I. N. Arsentyev,I. S. Tarasov	5
18	XRD, AFM and IR investigations of ordered AlGaAs ₂ phase in epitaxial Al _x Ga _{1– x} As/GaAs (100) heterostructures 2006 ·Surface and Interface Analysis ·É. P. Domashevskaya,П. В. Середин,А. Н. Лукин,(unknown),(unknown),I. N. Arsentyev,D. A. Vinokurov,I. S. Tarasov	19
19	Porous nanostructured InP: technology, properties, application 2005 ·Semiconductor Physics Quantum Electronics & Optoelectronics ·I. N. Arsentyev,(unknown)	5
20	New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 2005 ·Semiconductor Physics Quantum Electronics & Optoelectronics ·I. N. Arsentyev,(unknown)	1

About I. N. Arsentyev

I. N. Arsentyev is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 51 papers that have together received 400 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and interfaces (24 papers) and GaN-based semiconductor devices and materials (17 papers). The work is most often cited by research in Condensed Matter Physics (172 citations), Atomic and Molecular Physics, and Optics (230 citations) and Electrical and Electronic Engineering (242 citations). I. N. Arsentyev has collaborated with scholars based in Russia, Mexico and Germany. Frequent co-authors include П. В. Середин, I. S. Tarasov, D. A. Vinokurov, É. P. Domashevskaya, A. S. Lenshin, A. L. Stankevich, T. Prutskij, D. N. Nikolaev, В. М. Кашкаров and D. L. Goloshchapov. Their work appears in journals such as Applied Surface Science, Physica B Condensed Matter and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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