T. V. L’vova

473 total citations
50 papers, 383 citations indexed

About

T. V. L’vova is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, T. V. L’vova has authored 50 papers receiving a total of 383 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Atomic and Molecular Physics, and Optics, 40 papers in Electrical and Electronic Engineering and 12 papers in Biomedical Engineering. Recurrent topics in T. V. L’vova's work include Semiconductor Quantum Structures and Devices (35 papers), Semiconductor materials and devices (15 papers) and Advanced Semiconductor Detectors and Materials (15 papers). T. V. L’vova is often cited by papers focused on Semiconductor Quantum Structures and Devices (35 papers), Semiconductor materials and devices (15 papers) and Advanced Semiconductor Detectors and Materials (15 papers). T. V. L’vova collaborates with scholars based in Russia, France and Japan. T. V. L’vova's co-authors include V. L. Berkovits, V. P. Ulin, I. V. Sedova, М. В. Лебедев, P. A. Alekseev, А. В. Нежданов, A. L. Shakhmin, А. И. Машин, M. S. Dunaevskiy and V. M. Lantratov and has published in prestigious journals such as Nano Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

T. V. L’vova

46 papers receiving 371 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. V. L’vova Russia 11 282 272 123 112 59 50 383
G. DeSalvo United States 10 404 1.4× 204 0.8× 104 0.8× 80 0.7× 52 0.9× 35 452
Chantal Fontaine France 12 238 0.8× 246 0.9× 80 0.7× 95 0.8× 62 1.1× 32 356
A. N. Pikhtin Russia 11 251 0.9× 252 0.9× 56 0.5× 97 0.9× 52 0.9× 32 356
B. Ściana Poland 11 284 1.0× 277 1.0× 75 0.6× 58 0.5× 89 1.5× 76 377
Pamela Jurczak United Kingdom 12 351 1.2× 282 1.0× 169 1.4× 99 0.9× 23 0.4× 18 424
Z. F. Krasilnik Russia 12 333 1.2× 288 1.1× 113 0.9× 309 2.8× 45 0.8× 64 446
I. P. Soshnikov Russia 9 218 0.8× 200 0.7× 83 0.7× 106 0.9× 44 0.7× 35 307
S. J. Gibson Canada 8 233 0.8× 183 0.7× 330 2.7× 146 1.3× 62 1.1× 8 425
T. S. Abhilash India 11 195 0.7× 244 0.9× 121 1.0× 105 0.9× 29 0.5× 23 383
Shiang‐Feng Tang Taiwan 9 298 1.1× 249 0.9× 94 0.8× 107 1.0× 19 0.3× 29 363

Countries citing papers authored by T. V. L’vova

Since Specialization
Citations

This map shows the geographic impact of T. V. L’vova's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. V. L’vova with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. V. L’vova more than expected).

Fields of papers citing papers by T. V. L’vova

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. V. L’vova. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. V. L’vova. The network helps show where T. V. L’vova may publish in the future.

Co-authorship network of co-authors of T. V. L’vova

This figure shows the co-authorship network connecting the top 25 collaborators of T. V. L’vova. A scholar is included among the top collaborators of T. V. L’vova based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. V. L’vova. T. V. L’vova is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Лебедев, М. В., T. V. L’vova, A. N. Smirnov, et al.. (2023). Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces. Semiconductors. 57(5). 244–251. 1 indexed citations
2.
Лебедев, М. В., et al.. (2023). Chemical modification of the GaP(0 0 1) surface electric field with sulfide solutions. Materials Science and Engineering B. 291. 116370–116370. 1 indexed citations
3.
Komkov, O. S., T. V. L’vova, I. V. Sedova, et al.. (2016). Photoreflectance of indium antimonide. Physics of the Solid State. 58(12). 2394–2400. 10 indexed citations
4.
Kryzhanovskaya, N. V., E. I. Moiseev, F. I. Zubov, et al.. (2016). Microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum wells. Journal of Applied Physics. 120(23). 7 indexed citations
5.
Соловьев, В. А., I. V. Sedova, T. V. L’vova, et al.. (2015). Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy. Applied Surface Science. 356. 378–382. 9 indexed citations
6.
Kryzhanovskaya, N. V., М. В. Лебедев, T. V. L’vova, et al.. (2015). The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots. Technical Physics Letters. 41(7). 654–657. 3 indexed citations
7.
Kryzhanovskaya, N. V., М. В. Лебедев, T. V. L’vova, et al.. (2015). The effect of the sulfide passivation on the luminescence of microdisk mesas with quantum wells and quantum dots. Journal of Physics Conference Series. 643. 12043–12043. 1 indexed citations
8.
Alekseev, P. A., M. S. Dunaevskiy, V. P. Ulin, et al.. (2014). Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density. Nano Letters. 15(1). 63–68. 70 indexed citations
9.
Berkovits, V. L., et al.. (2012). Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals. Semiconductors. 46(11). 1432–1436. 5 indexed citations
10.
L’vova, T. V., Ya. V. Terent’ev, А. Н. Семенов, et al.. (2010). Wet sulfur passivation of GaSb(100) surface for optoelectronic applications. Applied Surface Science. 256(18). 5644–5649. 17 indexed citations
11.
Matveev, B. A., N. V. Zotova, S. A. Karandashev, et al.. (2010). Properties of mid-IR diodes with n-InAsSbP/n-InAs interface. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7597. 75970G–75970G. 7 indexed citations
12.
Ivanov, S. V., O. G. Lyublinskaya, Yu. B. Vasilyev, et al.. (2004). Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy. Applied Physics Letters. 84(23). 4777–4779. 15 indexed citations
13.
Lyublinskaya, O. G., S. V. Sorokin, I. V. Sedova, et al.. (2004). MBE growth and studies of hybrid heterostructures with II–VI/InAs heterovalent interfaces in the active region. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(4). 799–802. 1 indexed citations
14.
Sedova, I. V., T. V. L’vova, V. P. Ulin, et al.. (2002). Sulfide passivating coatings on GaAs(100) surface under conditions of MBE growth of 〈II–VI〉/GaAs. Semiconductors. 36(1). 54–59. 9 indexed citations
15.
Berkovits, V. L., et al.. (2000). Optical anisotropy of the (100) surfaces in AlxGa1−x As ternary compounds. Physics of the Solid State. 42(5). 981–986. 3 indexed citations
16.
Berkovits, V. L., T. V. L’vova, & V. P. Ulin. (2000). Chemical nitridation of GaAs(100) by hydrazine-sulfide water solutions. Vacuum. 57(2). 201–207. 11 indexed citations
17.
Berkovits, V. L., A. O. Gusev, V. M. Lantratov, et al.. (1996). Photoinduced formation of dimers at a liquid/(001)GaAs interface. Physical review. B, Condensed matter. 54(12). R8369–R8372. 9 indexed citations
18.
Berkovits, V. L., et al.. (1991). Sulphide passivation of GaAs: study of surface band bending. Materials Science and Engineering B. 9(1-3). 43–46. 2 indexed citations
19.
Goldberg, Yu. A., et al.. (1982). Electrical properties of gap crystals bombarded with high energy protons. physica status solidi (a). 70(2). K121–K124. 4 indexed citations
20.
Levinshteĭn, M. E., T. V. L’vova, D. N. Nasledov, & M. S. Shur. (1970). Magnetic field influence on the gunn effect (II). physica status solidi (a). 1(1). 177–187. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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