N. N. Faleev
- Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 33
-
- Semiconductor Quantum Structures and Devices 70
- Semiconductor materials and interfaces 19
-
- Ga2O3 and related materials 14
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- Advanced Semiconductor Detectors and Materials 32
- Semiconductor materials and devices 17
- Chalcogenide Semiconductor Thin Films 12
- Materials Chemistry top 10%
- Quantum Dots Synthesis And Properties 13
- Co-authors
- H. TemkinS. A. NikishinM. HoltzChristiana B. HonsbergT. ProkofyevaM. SeonStefan ZollnerVladimir G. Antipov
- Cited by
- Condensed Matter PhysicsAtomic and Molecular Physics, and OpticsElectronic, Optical and Magnetic Materials
- Journals
- Physical review. B, Condensed matter (4 papers)Applied Physics Letters (9 papers)Journal of Applied Physics (11 papers)
- Partner nations
- United StatesRussiaJapan
In The Last Decade
N. N. Faleev
112 papers receiving 1.9k citations
Peers
Comparison fields: 5 of 57
- Condensed Matter Physics 1.0k
- Atomic and Molecular Physics, and Optics 1.0k
- Electronic, Optical and Magnetic Materials 373
- Electrical and Electronic Engineering 1.1k
- Materials Chemistry 719
Countries citing papers authored by N. N. Faleev
This map shows the geographic impact of N. N. Faleev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. N. Faleev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. N. Faleev more than expected).
Fields of papers citing papers by N. N. Faleev
This network shows the impact of papers produced by N. N. Faleev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. N. Faleev. The network helps show where N. N. Faleev may publish in the future.
Co-authorship network
The 25 scholars most cited alongside N. N. Faleev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2019 | 7 | |
| 2 | 2019 | 7 | |
| 3 | 2018 | 7 | |
| 4 | 2016 | 17 | |
| 5 | 2016 | 0 | |
| 6 | 2015 | 4 | |
| 7 | 2015 | 0 | |
| 8 | 2010 | 19 | |
| 9 | 2001 | 5 | |
| 10 | 1999 | 58 | |
| 11 | 1999 | 15 | |
| 12 | 1998 | 2 | |
| 13 | 1997 | 4 | |
| 14 | Determination of structural parameters of a gradient epitaxial layer by high-resolution x-ray diffractometry. II. Solution of the inverse problem in terms of a kinematic and statistical dynamic theory of diffraction | 1996 | 8 |
| 15 | Determination of the structural parameters of a graded epitaxial layer by methods of high-resolution x-ray diffractometry. I. Initial approximation of the solution of the inverse problem of diffraction | 1996 | 2 |
| 16 | X-ray diffraction diagnostics of laser structures | 1995 | 8 |
| 17 | Effect of growth temperature on the electron mobility in InAlAs/InGaAs transistor structures grown on InP substrates by molecular beam epitaxy | 1995 | 2 |
| 18 | Molecular beam epitaxy of cubic GaN on a (001) GaAs substrate using hydrazine | 1995 | 9 |
| 19 | 1995 | 19 | |
| 20 | Growth of CdS nanocrystals in silicate glasses and in thin SiO 2 films in the initial stages of the phase separation of a solid solution | 1994 | 1 |
About N. N. Faleev
N. N. Faleev is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 121 papers that have together received 1.9k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (70 papers), GaN-based semiconductor devices and materials (33 papers), Advanced Semiconductor Detectors and Materials (32 papers), Semiconductor materials and interfaces (19 papers), Semiconductor materials and devices (17 papers), Ga2O3 and related materials (14 papers), Quantum Dots Synthesis And Properties (13 papers) and Chalcogenide Semiconductor Thin Films (12 papers). The work is most often cited by research in Condensed Matter Physics (1.0k citations), Atomic and Molecular Physics, and Optics (1.0k citations) and Electronic, Optical and Magnetic Materials (373 citations). N. N. Faleev has collaborated with scholars based in United States, Russia and Japan. Frequent co-authors include H. Temkin, S. A. Nikishin, M. Holtz, Christiana B. Honsberg, T. Prokofyeva, M. Seon, Stefan Zollner, Vladimir G. Antipov, Iftikhar Ahmad and G. A. Seryogin. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.