K.L. Wang

533 total citations
25 papers, 407 citations indexed

About

K.L. Wang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, K.L. Wang has authored 25 papers receiving a total of 407 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in K.L. Wang's work include Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (12 papers) and Silicon Nanostructures and Photoluminescence (9 papers). K.L. Wang is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (12 papers) and Silicon Nanostructures and Photoluminescence (9 papers). K.L. Wang collaborates with scholars based in United States, China and Taiwan. K.L. Wang's co-authors include Alexander Khitun, Alexander A. Balandin, R. P. G. Karunasiri, S.J. Cai, L.P. Sadwick, R. Li, Shawn Thomas, K. S. Boutros, R.P. Smith and Suzanne Martin and has published in prestigious journals such as Nanoscale, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

K.L. Wang

25 papers receiving 381 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
K.L. Wang United States	10	265	156	146	121	51	25	407
Rafael I. Aldaz United States	5	148 0.6×	173 1.1×	129 0.9×	259 2.1×	77 1.5×	5	328
W. Liu Singapore	6	178 0.7×	145 0.9×	191 1.3×	185 1.5×	95 1.9×	12	390
S. Kaiser Germany	11	232 0.9×	172 1.1×	190 1.3×	186 1.5×	86 1.7×	18	396
T. Wetteroth United States	7	218 0.8×	71 0.5×	89 0.6×	39 0.3×	52 1.0×	20	308
J.O. Maclean United Kingdom	11	380 1.4×	143 0.9×	120 0.8×	365 3.0×	43 0.8×	29	469
B. Gil France	12	156 0.6×	283 1.8×	275 1.9×	229 1.9×	168 3.3×	17	525
P. Valvin France	8	144 0.5×	200 1.3×	132 0.9×	190 1.6×	142 2.8×	14	381
В. В. Миленин Ukraine	9	212 0.8×	191 1.2×	65 0.4×	59 0.5×	26 0.5×	69	306
R. I. Gorbunov Russia	10	158 0.6×	285 1.8×	144 1.0×	379 3.1×	85 1.7×	26	440
Chang‐Chi Pan Taiwan	10	82 0.3×	90 0.6×	115 0.8×	156 1.3×	52 1.0×	18	279

Countries citing papers authored by K.L. Wang

Since Specialization

Citations

This map shows the geographic impact of K.L. Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.L. Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.L. Wang more than expected).

Fields of papers citing papers by K.L. Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.L. Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.L. Wang. The network helps show where K.L. Wang may publish in the future.

Co-authorship network of co-authors of K.L. Wang

This figure shows the co-authorship network connecting the top 25 collaborators of K.L. Wang. A scholar is included among the top collaborators of K.L. Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.L. Wang. K.L. Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zhang, Y., Filipp A. Baron, K.L. Wang, & Zoran Krivokapić. (2004). Complimentary Single-Electron/Hole Action of Nanoscale SOI CMOS Transistors. IEEE Electron Device Letters. 25(7). 492–494. 4 indexed citations

Liu, Jianlin, Jun Wan, K.L. Wang, & Dapeng Yu. (2003). Critical thickness of self-assembled Ge quantum dot superlattices. Journal of Crystal Growth. 251(1-4). 666–669. 6 indexed citations

Huang, Fengyi, et al.. (2002). Epitaxial SiGeC/Si photodetector with response in the 1.3-1.55 μm wavelength range. 665–668. 2 indexed citations

Karunasiri, R. P. G., et al.. (2002). Normal incident SiGe/Si multiple quantum well infrared detector. 749–752. 1 indexed citations

Jin, Geng Bang, Jun Wan, Yongkang Luo, Jianlin Liu, & K.L. Wang. (2001). Uniform and ordered self-assembled Ge dots on patterned Si substrates with selectively epitaxial growth technique. Journal of Crystal Growth. 227-228. 1100–1105. 9 indexed citations

Khitun, Alexander, Alexander A. Balandin, & K.L. Wang. (1999). Modification of the lattice thermal conductivity in silicon quantum wires due to spatial confinement of acoustic phonons. Superlattices and Microstructures. 26(3). 181–193. 91 indexed citations

Cai, S.J., K.L. Wang, R.P. Smith, et al.. (1999). An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz. IEEE Electron Device Letters. 20(7). 323–325. 56 indexed citations

Cai, S.J., et al.. (1998). High performance AlGaN/GaN HEMT with improved Ohmiccontacts. Electronics Letters. 34(24). 2354–2356. 63 indexed citations

Huang, Fuqing, Yi Tang, Junfei Duan, & K.L. Wang. (1997). Photoluminescence from SiGe/Si quantum dots withwavelength in the visible range. Electronics Letters. 33(20). 1736–1737. 3 indexed citations

10.

Zheng, Xinyu, et al.. (1995). A novel high speed, three element Si-based static random access memory (SRAM) cell. IEEE Electron Device Letters. 16(6). 256–258. 6 indexed citations

11.

Wang, K.L., et al.. (1995). Band-gap luminescence in strain-symmetrized Sim/Gen superlattices grown by molecular beam epitaxy using gaseous Si2H6 and solid Ge. Journal of Crystal Growth. 150. 1045–1049. 3 indexed citations

12.

Tanner, M. O., K.L. Wang, T. I. Kamins, et al.. (1994). Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers. IEEE Transactions on Electron Devices. 41(7). 1273–1281. 34 indexed citations

13.

Wu, Sean, et al.. (1994). A p-channel coupled delta-doped silicon MESFET grown by molecular beam epitaxy. IEEE Electron Device Letters. 15(6). 206–208. 2 indexed citations

14.

Vantomme, A., Jae‐Hoon Song, Donald Y.C. Lie, et al.. (1993). Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation From 40 to 150 °C. MRS Proceedings. 326. 1 indexed citations

15.

Kallel, Mohamed, V. Arbet-Engels, K.L. Wang, & R. P. G. Karunasiri. (1991). MBE SimGen strained monolayer superlattices. Journal of Crystal Growth. 111(1-4). 897–901. 1 indexed citations

16.

Karunasiri, R. P. G., et al.. (1991). Long-wavelength (10- mu m) infrared detector using Si/sub 1-x/Ge/sub x//Simultiple quantum wells. IEEE Transactions on Electron Devices. 38(12). 2708–2708. 1 indexed citations

17.

Wang, K.L., et al.. (1989). Resonant tunneling of variously strained Si/GexSi1−x/Si heterostructures. Superlattices and Microstructures. 5(2). 201–206. 26 indexed citations

18.

Chang, Shoou‐Jinn, et al.. (1989). Investigation of SimGen strained monolayer superlattices by Rheed, Raman, and X-ray techniques. Thin Solid Films. 183(1-2). 57–63. 9 indexed citations

19.

Karunasiri, R. P. G. & K.L. Wang. (1988). Infrared absorption in parabolic multiquantum well structures. Superlattices and Microstructures. 4(6). 661–664. 27 indexed citations

20.

Sadwick, L.P. & K.L. Wang. (1986). A treatise on the capacitance—Voltage relation of high electron mobility transistors. IEEE Transactions on Electron Devices. 33(5). 651–656. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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