E. V. Nikitina

604 total citations
73 papers, 445 citations indexed

About

E. V. Nikitina is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, E. V. Nikitina has authored 73 papers receiving a total of 445 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 44 papers in Atomic and Molecular Physics, and Optics and 31 papers in Condensed Matter Physics. Recurrent topics in E. V. Nikitina's work include Semiconductor Quantum Structures and Devices (40 papers), GaN-based semiconductor devices and materials (31 papers) and Semiconductor materials and devices (15 papers). E. V. Nikitina is often cited by papers focused on Semiconductor Quantum Structures and Devices (40 papers), GaN-based semiconductor devices and materials (31 papers) and Semiconductor materials and devices (15 papers). E. V. Nikitina collaborates with scholars based in Russia, France and Germany. E. V. Nikitina's co-authors include A. Yu. Egorov, А.С. Гудовских, I. A. Morozov, V. M. Ustinov, A I Baranov, Elizaveta Semenova, Yu. M. Shernyakov, Jean‐Paul Kleider, A. R. Kovsh and A. G. Gladyshev and has published in prestigious journals such as Journal of Applied Physics, Scientific Reports and Nanotechnology.

In The Last Decade

E. V. Nikitina

67 papers receiving 410 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. V. Nikitina Russia	14	325	294	97	87	75	73	445
Kevin Knabe United States	9	327 1.0×	341 1.2×	82 0.8×	50 0.6×	54 0.7×	22	500
A. Bezinger Canada	11	283 0.9×	171 0.6×	54 0.6×	71 0.8×	49 0.7×	24	357
Anna Szerling Poland	12	364 1.1×	188 0.6×	85 0.9×	58 0.7×	44 0.6×	73	485
Kamil Kosiel Poland	13	404 1.2×	180 0.6×	47 0.5×	82 0.9×	57 0.8×	68	538
Mehran Shahmohammadi Switzerland	12	256 0.8×	233 0.8×	236 2.4×	222 2.6×	153 2.0×	31	585
Thomas Schwarzl Austria	16	471 1.4×	326 1.1×	50 0.5×	339 3.9×	26 0.3×	39	609
Honghyuk Kim United States	10	169 0.5×	120 0.4×	26 0.3×	97 1.1×	29 0.4×	40	301
H. Z. Wu United States	13	330 1.0×	203 0.7×	20 0.2×	219 2.5×	38 0.5×	31	455
S. Elagöz Türkiye	16	268 0.8×	503 1.7×	226 2.3×	208 2.4×	88 1.2×	67	692
Takeya Unuma Japan	12	276 0.8×	238 0.8×	25 0.3×	31 0.4×	60 0.8×	39	373

Countries citing papers authored by E. V. Nikitina

Since Specialization

Citations

This map shows the geographic impact of E. V. Nikitina's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. V. Nikitina with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. V. Nikitina more than expected).

Fields of papers citing papers by E. V. Nikitina

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. V. Nikitina. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. V. Nikitina. The network helps show where E. V. Nikitina may publish in the future.

Co-authorship network of co-authors of E. V. Nikitina

This figure shows the co-authorship network connecting the top 25 collaborators of E. V. Nikitina. A scholar is included among the top collaborators of E. V. Nikitina based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. V. Nikitina. E. V. Nikitina is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Babichev, A. V., et al.. (2024). Planar Micropillar Cavity Structure with Enhanced Power-Conversion Efficiency. 266–269. 1 indexed citations

Sorokin, S. V., I. V. Sedova, N. A. Maleev, et al.. (2023). Towards Bright Single-Photon Emission in Elliptical Micropillars. Nanomaterials. 13(9). 1572–1572. 1 indexed citations

Nikitina, E. V., et al.. (2023). Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs. Semiconductors. 57(12). 550–553. 1 indexed citations

Nikitina, E. V., et al.. (2019). Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers. Semiconductors. 53(12). 1717–1723. 2 indexed citations

Baranov, A I, А.С. Гудовских, I. A. Morozov, et al.. (2018). Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy. Journal of Applied Physics. 123(16). 7 indexed citations

Гудовских, А.С., I. A. Morozov, A I Baranov, et al.. (2018). Si doped GaP layers grown on Si wafers by low temperature PE-ALD. Journal of Renewable and Sustainable Energy. 10(2). 17 indexed citations

Kryzhanovskaya, N. V., V. N. Nevedomskiy, E. V. Nikitina, et al.. (2017). Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates. Semiconductors. 51(2). 267–271. 3 indexed citations

Kryzhanovskaya, N. V., et al.. (2017). Epitaxial growth and investigation of GaP/GaP(As)N heterostructures on Si (100) 4⁰ substrates. Journal of Physics Conference Series. 917. 32044–32044. 2 indexed citations

Baranov, A I, А.С. Гудовских, I. A. Morozov, et al.. (2017). Influence of PE‐ALD of GaP on the Silicon Wafers Quality. physica status solidi (a). 214(12). 2 indexed citations

10.

Reznik, R. R., K. P. Kotlyar, І. П. Сошніков, et al.. (2016). Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy. Physics of the Solid State. 58(10). 1952–1955. 7 indexed citations

11.

Blokhin, S. A., N. V. Kryzhanovskaya, E. I. Moiseev, et al.. (2016). Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping. Technical Physics Letters. 42(10). 1009–1012. 3 indexed citations

12.

Bukatin, Anton, et al.. (2016). Raman measurements of dilute nitride alloys GaP(As)N grown on GaP substrates. Journal of Physics Conference Series. 741. 12005–12005.

13.

Позина, Г., M. A. Kaliteevski, E. V. Nikitina, et al.. (2016). Nonlinear behavior of the emission in the periodic structure of InAs monolayers embedded in a GaAs matrix. physica status solidi (b). 254(4). 1600402–1600402. 7 indexed citations

14.

Nikitina, E. V., et al.. (2016). GaAs/InGaAsN heterostructures for multi-junction solar cells. Semiconductors. 50(5). 652–655. 1 indexed citations

15.

Koudinov, A. V., et al.. (2015). Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs. Scientific Reports. 5(1). 11474–11474. 6 indexed citations

16.

Позина, Г., M. A. Kaliteevski, E. V. Nikitina, et al.. (2015). Super-radiant mode in InAs—monolayer–based Bragg structures. Scientific Reports. 5(1). 14911–14911. 17 indexed citations

17.

Nikitina, E. V., et al.. (2015). MBE growth of GaP on a Si substrate. Semiconductors. 49(4). 559–562. 19 indexed citations

18.

Nikitina, E. V., et al.. (2014). Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions. Semiconductors. 48(3). 392–396. 6 indexed citations

19.

Livshits, D. A., A. R. Kovsh, A. E. Zhukov, et al.. (2004). High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures. Technical Physics Letters. 30(1). 9–11. 5 indexed citations

20.

Zhukov, A. E., B. V. Volovik, S. S. Mikhrin, et al.. (2001). 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots. Technical Physics Letters. 27(9). 734–736. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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