A. Yu. Egorov

10.2k total citations · 1 hit paper
334 papers, 7.3k citations indexed

About

A. Yu. Egorov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, A. Yu. Egorov has authored 334 papers receiving a total of 7.3k indexed citations (citations by other indexed papers that have themselves been cited), including 274 papers in Electrical and Electronic Engineering, 269 papers in Atomic and Molecular Physics, and Optics and 61 papers in Condensed Matter Physics. Recurrent topics in A. Yu. Egorov's work include Semiconductor Quantum Structures and Devices (250 papers), Semiconductor Lasers and Optical Devices (166 papers) and Photonic and Optical Devices (92 papers). A. Yu. Egorov is often cited by papers focused on Semiconductor Quantum Structures and Devices (250 papers), Semiconductor Lasers and Optical Devices (166 papers) and Photonic and Optical Devices (92 papers). A. Yu. Egorov collaborates with scholars based in Russia, Germany and France. A. Yu. Egorov's co-authors include V. M. Ustinov, Zh. I. Alfërov, H. Riechert, D. Bimberg, N. N. Ledentsov, A. E. Zhukov, P. S. Kop’ev, Marius Grundmann, P. Werner and U. Gösele and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Physical review. B, Condensed matter.

In The Last Decade

A. Yu. Egorov

302 papers receiving 6.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ultranarrow Luminescence Lines from Single Quantum Dots

1995 563 citations N. N. Ledentsov, D. Bimberg et al. profile →

Peers

Countries citing papers authored by A. Yu. Egorov

Since Specialization

Citations

This map shows the geographic impact of A. Yu. Egorov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Yu. Egorov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Yu. Egorov more than expected).

Fields of papers citing papers by A. Yu. Egorov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Yu. Egorov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Yu. Egorov. The network helps show where A. Yu. Egorov may publish in the future.

Co-authorship network of co-authors of A. Yu. Egorov

This figure shows the co-authorship network connecting the top 25 collaborators of A. Yu. Egorov. A scholar is included among the top collaborators of A. Yu. Egorov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Yu. Egorov. A. Yu. Egorov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Gain and Threshold Improvements of 1300 nm Lasers Based on InGaAs/InAlGaAs Superlattice Active Regions 2025 ·IEEE Journal of Quantum Electronics ·A. V. Babichev, (unknown), (unknown), S. A. Blokhin, Yuri M. Shernyakov, M. V. Maximov, (unknown), N. A. Pikhtin, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov, Si-Cong Tian, D. Bimberg	1
2	Photoluminescence of dense arrays of InGaPAs/InGaAs quantum dots formed by substitution of group V elements 2024 ·Journal of Luminescence ·(unknown), N. V. Kryzhanovskaya, (unknown), (unknown), A. G. Gladyshev, A. V. Babichev, (unknown), (unknown), (unknown), (unknown), (unknown), I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, A. E. Zhukov	1
3	Energy efficiency of 1.55-µm vertical-cavity surface-emitting lasers with an active region based on strained InGaAs/InAlGaAs quantum wells 2024 ·Journal of Optical Technology ·S. A. Blokhin, (unknown), M. A. Bobrov, (unknown), A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. G. Gladyshev, (unknown), (unknown), (unknown), A. Yu. Egorov, Si-Cong Tian, D. Bimberg	0
4	Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers 2024 ·IEEE Journal of Selected Topics in Quantum Electronics ·A. V. Babichev, (unknown), N. V. Kryzhanovskaya, S. I. Troshkov, (unknown), (unknown), M. M. Kulagina, M. A. Bobrov, (unknown), S. A. Blokhin, N. A. Maleev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov	0
5	The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures 2023 ·Semiconductors ·I. I. Novikov, (unknown), A. G. Gladyshev, (unknown), A. V. Babichev, (unknown), Yu. M. Shernyakov, (unknown), N. V. Kryzhanovskaya, A. E. Zhukov, A. Yu. Egorov	1
6	Low temperature deposition of vanadium dioxide on III–V semiconductors and integration on mid-infrared quantum cascade lasers 2023 ·AIP Advances ·(unknown), Thomas Maroutian, (unknown), A. V. Babichev, A. Yu. Egorov, Lianhe Li, E. H. Linfield, R. Colombelli, Adel Bousseksou	1
7	1.3 μ m optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region 2022 ·Laser Physics Letters ·N. V. Kryzhanovskaya, (unknown), S. A. Blokhin, (unknown), (unknown), (unknown), A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, (unknown), (unknown), A. Yu. Egorov	2
8	Influence of low temperatures and thermal annealing on the optical properties of InGaPAs quantum dots 2022 ·SHILAP Revista de lepidopterología ·(unknown), (unknown), (unknown), A. M. Nadtochiy, A. G. Gladyshev, A. V. Babichev, (unknown), I. I. Novikov, (unknown), L. Ya. Karachinsky, N. V. Kryzhanovskaya, (unknown), A. Yu. Egorov, V.E. Bougrov	1
9	Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures 2021 ·Journal of Luminescence ·I. I. Novikov, A. M. Nadtochiy, (unknown), A. G. Gladyshev, (unknown), (unknown), A. V. Babichev, (unknown), D. V. Denisov, L. Ya. Karachinsky, A. Yu. Egorov, V.E. Bougrov	2
10	Collapsing-field-domain-based 200 GHz solid-state source 2019 ·Applied Physics Letters ·Sergey N. Vainshtein, (unknown), V. S. Yuferev, (unknown), (unknown), N. А. Kalyuzhnyy, N. A. Maleev, A. Yu. Egorov, Juha Kostamovaara	14
11	Electric-field domain boundary instability in weakly coupled semiconductor superlattices 2016 ·Journal of Applied Physics ·(unknown), (unknown), P. N. Brunkov, A. Yu. Egorov	2
12	Optical properties of GaN x As y P1−x−y semiconductor quaternary solid solutions 2012 ·Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ·N. V. Kryzhanovskaya, A. Yu. Egorov, (unknown), (unknown)	0
13	Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures) 1997 ·A. E. Zhukov, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul’nikov, N. N. Ledentsov, S. V. Zaı̆tsev, N. Yu. Gordeev, P. S. Kop’ev, Жорес Иванович Алферов	2
14	Optical emission range of structures with strained InAs quantum dots in GaAs 1996 ·A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, N. N. Ledentsov, М. В. Максимов, V. M. Ustinov, A. F. Tsatsul’nikov, Zh. I. Alfërov, (unknown), D. Bimberg	1
15	An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix 1996 ·Semiconductors ·Zh. I. Alfërov, Н. А. Берт, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, М. В. Максимов, A. V. Sakharov, V. M. Ustinov, (unknown), Yu. M. Shernyakov, D. Bimberg	21
16	Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix 1996 ·Semiconductors ·A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, N. N. Ledentsov, М. В. Максимов, V. M. Ustinov, A. F. Tsatsul’nikov, Н. А. Берт, A. O. Kosogov, Zh. I. Alfërov, D. Bimberg	8
17	Strained submonolayer heterostructures and heterojunctions with quantum points 1995 ·Physics-Uspekhi ·Zh. I. Alfërov, D. Bimberg, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, N. N. Ledentsov, S. Ruvimov, V. M. Ustinov, (unknown)	2
18	Growth of (In,Ga)As/GaAs quantum-well heterostructures through the deposition of ``submonolayer'' strained InAs layers 1994 ·Semiconductors ·A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, N. N. Ledentsov, М. В. Максимов, V. M. Ustinov	5
19	Effect of deposition conditions on the formation of (In,Ga)As quantum clusters in a GaAs matrix 1994 ·A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, N. N. Ledentsov, М. В. Максимов, V. M. Ustinov	2
20	Yb-Ba-Cu-O growth using a BaO molecular beam 1991 ·Soviet physics. Technical physics ·A. Yu. Egorov, P. S. Kop’ev, N. N. Ledentsov, М. В. Максимов, V. V. Mamutin, M. E. Alferieff	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact