L. T. Tung

420 total citations
12 papers, 354 citations indexed

About

L. T. Tung is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, L. T. Tung has authored 12 papers receiving a total of 354 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in L. T. Tung's work include Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Ga2O3 and related materials (5 papers). L. T. Tung is often cited by papers focused on Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Ga2O3 and related materials (5 papers). L. T. Tung collaborates with scholars based in Taiwan, United States and Vietnam. L. T. Tung's co-authors include J. Kwo, M. Hong, H. C. Chiu, Wilman Tsai, T. D. Lin, Pei-Ching Chang, Chih‐Hao Lee, M. Hong, C. C. Chang and Yizhe Chang and has published in prestigious journals such as Applied Physics Letters, Physical Chemistry Chemical Physics and Journal of Physics D Applied Physics.

In The Last Decade

L. T. Tung

11 papers receiving 345 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. T. Tung Taiwan	9	337	155	102	92	56	12	354
R. D. Long Ireland	10	348 1.0×	150 1.0×	66 0.6×	129 1.4×	80 1.4×	16	394
Rathnait Long United States	8	338 1.0×	130 0.8×	125 1.2×	89 1.0×	151 2.7×	11	376
Golnaz Karbasian United States	9	301 0.9×	181 1.2×	66 0.6×	58 0.6×	92 1.6×	17	359
Rahul Suri United States	9	261 0.8×	103 0.7×	74 0.7×	61 0.7×	98 1.8×	12	282
Kristy J. Kormondy United States	10	223 0.7×	337 2.2×	152 1.5×	85 0.9×	44 0.8×	13	395
S. K. Chang South Korea	8	206 0.6×	245 1.6×	72 0.7×	171 1.9×	62 1.1×	30	342
E. Petitprez France	7	365 1.1×	219 1.4×	84 0.8×	318 3.5×	27 0.5×	30	437
P. Sivasubramani United States	11	424 1.3×	245 1.6×	64 0.6×	63 0.7×	16 0.3×	26	445
Tsunehiro Ino Japan	11	447 1.3×	152 1.0×	44 0.4×	80 0.9×	22 0.4×	27	487

Countries citing papers authored by L. T. Tung

Since Specialization

Citations

This map shows the geographic impact of L. T. Tung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. T. Tung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. T. Tung more than expected).

Fields of papers citing papers by L. T. Tung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. T. Tung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. T. Tung. The network helps show where L. T. Tung may publish in the future.

Co-authorship network of co-authors of L. T. Tung

This figure shows the co-authorship network connecting the top 25 collaborators of L. T. Tung. A scholar is included among the top collaborators of L. T. Tung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. T. Tung. L. T. Tung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Tung, L. T., et al.. (2024). Adjustment of optical absorption in phosphorene through electron–phonon coupling and an electric field. Physical Chemistry Chemical Physics. 26(15). 11825–11832.

Lee, Y. J., et al.. (2010). Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing. Journal of Physics D Applied Physics. 43(13). 135101–135101. 10 indexed citations

Chang, Yen‐Chung, Wen-Hsin Chang, Hsin‐Cheng Chiu, et al.. (2009). Inversion-channel GaN MOSFET using atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> as gate dielectric. 131–132. 2 indexed citations

Chang, Yen‐Chung, Wen-Hsin Chang, H. C. Chiu, et al.. (2008). Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric. Applied Physics Letters. 93(5). 55 indexed citations

Lin, T. D., H. C. Chiu, Pei-Ching Chang, et al.. (2008). High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics. Applied Physics Letters. 93(3). 103 indexed citations

Chiu, H. C., L. T. Tung, Yizhe Chang, et al.. (2008). Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As. Applied Physics Letters. 93(20). 51 indexed citations

Chu, Li‐Kang, Mao Lin Huang, L. T. Tung, et al.. (2008). Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge. Journal of Crystal Growth. 311(7). 2195–2198. 39 indexed citations

Tung, L. T., et al.. (2008). Growth and structural characteristics of GaN∕AlN/nanothick γ-Al2O3∕Si (111). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(3). 1064–1067. 7 indexed citations

Chang, P., et al.. (2008). 1 nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors. Applied Physics Letters. 92(17). 43 indexed citations

10.

Chang, P., et al.. (2008). Oxide scalability in Al2O3∕Ga2O3(Gd2O3)∕In0.20Ga0.80As∕GaAs heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(3). 1132–1135. 9 indexed citations

11.

Tung, L. T., et al.. (2008). Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium. Journal of Crystal Growth. 311(7). 2187–2190. 17 indexed citations

12.

Lin, T. D., et al.. (2008). Molecular beam epitaxy grown Ga2O3(Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(3). 1128–1131. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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