K. Cherkaoui

2.2k total citations
128 papers, 1.8k citations indexed

About

K. Cherkaoui is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, K. Cherkaoui has authored 128 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 119 papers in Electrical and Electronic Engineering, 43 papers in Atomic and Molecular Physics, and Optics and 29 papers in Materials Chemistry. Recurrent topics in K. Cherkaoui's work include Semiconductor materials and devices (94 papers), Advancements in Semiconductor Devices and Circuit Design (53 papers) and Semiconductor materials and interfaces (33 papers). K. Cherkaoui is often cited by papers focused on Semiconductor materials and devices (94 papers), Advancements in Semiconductor Devices and Circuit Design (53 papers) and Semiconductor materials and interfaces (33 papers). K. Cherkaoui collaborates with scholars based in Ireland, United Kingdom and Germany. K. Cherkaoui's co-authors include Paul K. Hurley, Scott Monaghan, Ian M. Povey, Eileen O’Connor, Martyn E. Pemble, S. B. Newcomb, Max C. Lemme, Vladimir Djara, G. Hughes and H.D.B. Gottlob and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

K. Cherkaoui

123 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Cherkaoui Ireland 24 1.7k 597 571 185 119 128 1.8k
B. Holländer Germany 19 1.0k 0.6× 561 0.9× 409 0.7× 187 1.0× 159 1.3× 52 1.3k
H. C. Lin Belgium 19 1.3k 0.8× 443 0.7× 458 0.8× 178 1.0× 106 0.9× 43 1.4k
Juha Riikonen Finland 17 583 0.3× 533 0.9× 416 0.7× 287 1.6× 149 1.3× 60 1.0k
Massimo Longo Italy 19 737 0.4× 889 1.5× 374 0.7× 159 0.9× 125 1.1× 91 1.2k
J. Ratajczak Poland 15 685 0.4× 331 0.6× 389 0.7× 132 0.7× 56 0.5× 126 927
Enzo Rotunno Italy 18 353 0.2× 487 0.8× 210 0.4× 244 1.3× 118 1.0× 64 868
Paola Favia Belgium 21 1.2k 0.7× 515 0.9× 331 0.6× 282 1.5× 181 1.5× 120 1.5k
Michael Labella United States 13 646 0.4× 1.1k 1.8× 207 0.4× 267 1.4× 82 0.7× 24 1.2k
Kazuyoshi Torii Japan 26 2.0k 1.2× 962 1.6× 243 0.4× 310 1.7× 218 1.8× 144 2.3k
Magali Putero France 16 474 0.3× 384 0.6× 250 0.4× 202 1.1× 112 0.9× 53 705

Countries citing papers authored by K. Cherkaoui

Since Specialization
Citations

This map shows the geographic impact of K. Cherkaoui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Cherkaoui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Cherkaoui more than expected).

Fields of papers citing papers by K. Cherkaoui

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Cherkaoui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Cherkaoui. The network helps show where K. Cherkaoui may publish in the future.

Co-authorship network of co-authors of K. Cherkaoui

This figure shows the co-authorship network connecting the top 25 collaborators of K. Cherkaoui. A scholar is included among the top collaborators of K. Cherkaoui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Cherkaoui. K. Cherkaoui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Torraca, Paolo La, Andrea Padovani, Lars‐Erik Wernersson, et al.. (2023). Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–5. 1 indexed citations
3.
Cherkaoui, K., Enrico Caruso, Jun Lin, et al.. (2022). (Invited) Investigating Defects in the High-k/Ingaas System at Cryogenic Temperature. ECS Meeting Abstracts. MA2022-01(19). 1056–1056. 1 indexed citations
4.
Bhattacharjee, Shubhadeep, Enrico Caruso, Niall McEvoy, et al.. (2020). Insights into Multilevel Resistive Switching in Monolayer MoS2. ACS Applied Materials & Interfaces. 12(5). 6022–6029. 78 indexed citations
5.
Monaghan, Scott, Farzan Gity, Michael Schmidt, et al.. (2018). Large Area Growth of MoS2 By Chemical Vapour Deposition. ECS Meeting Abstracts. MA2018-02(16). 708–708. 1 indexed citations
6.
Mirabelli, Gioele, Michael Schmidt, K. Cherkaoui, et al.. (2016). Back-gated Nb-doped MoS2 junctionless field-effect-transistors. AIP Advances. 6(2). 24 indexed citations
7.
Monaghan, Scott, Éamon O’Connor, Rafael Rios, et al.. (2014). Capacitance and Conductance for an MOS System in Inversion, with Oxide Capacitance and Minority Carrier Lifetime Extractions. IEEE Transactions on Electron Devices. 61(12). 4176–4185. 9 indexed citations
8.
Djara, Vladimir, Terrance P. O’Regan, K. Cherkaoui, et al.. (2013). Electrically active interface defects in the In0.53Ga0.47As MOS system. Microelectronic Engineering. 109. 182–188. 20 indexed citations
9.
Lin, Jun, Scott Monaghan, Ian M. Povey, et al.. (2013). An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. Journal of Applied Physics. 114(14). 58 indexed citations
10.
Galiana, B., J.M. Molina-Aldareguía, Scott Monaghan, et al.. (2011). Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application. Nanoscale Research Letters. 6(1). 400–400. 13 indexed citations
11.
Engström, Olof, Bahman Raeissi, Ivona Z. Mitrović, et al.. (2010). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited). Journal of Telecommunications and Information Technology. 1. 10–19. 2 indexed citations
12.
Engström, Olof, Bahman Raeissi, Ivona Z. Mitrović, et al.. (2010). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology. 10–19. 3 indexed citations
13.
Engström, Olof, Bahman Raeissi, Ivona Z. Mitrović, et al.. (2010). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology. 81–90. 1 indexed citations
14.
Bennett, Nick S., P.J. McNally, B. Galiana, et al.. (2010). Multi-technique characterisation of MOVPE-grown GaAs on Si. Microelectronic Engineering. 88(4). 472–475. 4 indexed citations
15.
Gottlob, H.D.B., Andrea Stefani, M. Schmidt, et al.. (2009). Gd silicate: A high-k dielectric compatible with high temperature annealing. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 249–252. 20 indexed citations
16.
Hurley, Paul K., K. Cherkaoui, Eileen O’Connor, et al.. (2008). Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon. Chalmers Publication Library (Chalmers University of Technology). 3 indexed citations
17.
Mitrović, Ivona Z., S. Hall, Paul R. Chalker, et al.. (2008). Quest for an optimal gadolinium silicate gate dielectric stack. Chalmers Publication Library (Chalmers University of Technology). 1 indexed citations
18.
Hahn, Giso, et al.. (2005). HYDROGEN KINETICS IN CRYSTALLINE SILICON - PECVD SIN STUDIES IN MC AND CZ SILICON. 717–720. 2 indexed citations
19.
Hahn, Giso, et al.. (2005). Kinetics of hydrogenation and interaction with oxygen in crystalline silicon. KOPS (University of Konstanz). 16. 1035–1038. 3 indexed citations
20.
Cherkaoui, K., et al.. (2004). Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes. Semiconductor Science and Technology. 19(3). 468–471. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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