Vladimir Djara

1.0k citations

47 papers · 780 indexed · h-index 17

Co-authors: K. Cherkaoui Paul K. Hurley Scott Monaghan Eileen O’Connor J.C. Bérnède Lukas Czornomaz J. Fompeyrine Veeresh Deshpande
Topics: Semiconductor materials and devices (40 papers)Advancements in Semiconductor Devices and Circuit Design (26 papers)Semiconductor materials and interfaces (12 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Surfaces, Coatings and Films
Journals: Journal of Applied Physics Macromolecules IEEE Transactions on Electron Devices
Partner nations: Ireland Switzerland United States

In The Last Decade

Vladimir Djara

46 papers receiving 758 citations

Peers

Countries citing papers authored by Vladimir Djara

Since Specialization

Citations

This map shows the geographic impact of Vladimir Djara's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Vladimir Djara with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Vladimir Djara more than expected).

Fields of papers citing papers by Vladimir Djara

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Vladimir Djara. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Vladimir Djara. The network helps show where Vladimir Djara may publish in the future.

Co-authorship network of co-authors of Vladimir Djara

This figure shows the co-authorship network connecting the top 25 collaborators of Vladimir Djara. A scholar is included among the top collaborators of Vladimir Djara based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Vladimir Djara. Vladimir Djara is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Three-dimensional monolithic integration of III–V and Si(Ge) FETs for hybrid CMOS and beyond 2017 ·Japanese Journal of Applied Physics ·Veeresh Deshpande,Vladimir Djara,Éamon O’Connor,Pouya Hashemi,Thomas Morf,Karthik Balakrishnan,Daniele Caimi,Marilyne Sousa,J. Fompeyrine,Lukas Czornomaz	22
2	DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration 2016 ·Solid-State Electronics ·Veeresh Deshpande,Vladimir Djara,Eileen O’Connor,Pouya Hashemi,Karthik Balakrishnan,Daniele Caimi,M. Sousa,Lukas Czornomaz,J. Fompeyrine	6
3	First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration 2016 ·Veeresh Deshpande,Vladimir Djara,Eileen O’Connor,Daniele Caimi,M. Sousa,Lukas Czornomaz,J. Fompeyrine,Pouya Hashemi,Karthik Balakrishnan	1
4	(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology 2015 ·ECS Transactions ·Veeresh Deshpande,Vladimir Djara,Daniele Caimi,Éamon O’Connor,Marilyne Sousa,Lukas Czornomaz,J. Fompeyrine	2
5	Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates 2015 ·DORA Empa (Swiss Federal Laboratories for Materials Science and Technology (Empa)) ·Lukas Czornomaz,Emanuele Uccelli,M. Sousa,Veeresh Deshpande,Vladimir Djara,Daniele Caimi,Marta D. Rossell,Rolf Erni,J. Fompeyrine	53
6	Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition 2015 ·Microelectronic Engineering ·Vladimir Djara,Marilyne Sousa,(unknown),Lukas Czornomaz,Veeresh Deshpande,Chiara Marchiori,Emanuele Uccelli,Daniele Caimi,Christophe Rossel,J. Fompeyrine	16
7	Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal 2015 ·Solid-State Electronics ·Vladimir Djara,Lukas Czornomaz,Veeresh Deshpande,(unknown),Emanuele Uccelli,Daniele Caimi,Marilyne Sousa,J. Fompeyrine	8
8	Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs 2015 ·Veeresh Deshpande,Vladimir Djara,Eileen O’Connor,Pouya Hashemi,Karthik Balakrishnan,M. Sousa,Daniele Caimi,Antonis Olziersky,Lukas Czornomaz,J. Fompeyrine	31
9	Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists 2014 ·Microelectronic Engineering ·Anushka Gangnaik,Yordan M. Georgiev,Brendan McCarthy,Nikolay Petkov,Vladimir Djara,Justin D. Holmes	24
10	Fully CMOS-compatible top-down fabrication of sub-50nm silicon nanowire sensing devices 2014 ·Microelectronic Engineering ·Yordan M. Georgiev,Nikolay Petkov,Brendan McCarthy,Ran Yu,Vladimir Djara,Dan O’Connell,(unknown),Adrian M. Nightingale,(unknown),John C. de Mello,Alan Blake,Samaresh Das,Justin D. Holmes	12
11	High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition 2014 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Mícheál Burke,Alan Blake,Vladimir Djara,Dan O’Connell,Ian M. Povey,K. Cherkaoui,Scott Monaghan,(unknown),Richard Murphy,Paul K. Hurley,Martyn E. Pemble,Aidan J. Quinn	14
12	Electrically active interface defects in the In0.53Ga0.47As MOS system 2013 ·Microelectronic Engineering ·Vladimir Djara,Terrance P. O’Regan,K. Cherkaoui,Michael Schmidt,Scott Monaghan,Eileen O’Connor,Ian M. Povey,Dan O’Connell,Martyn E. Pemble,Paul K. Hurley	20
13	(Invited) Can Metal/Al₂O₃/In_0.53Ga_0.47As/InP MOSCAP Properties Translate to Metal/Al₂O₃/In_0.53Ga_0.47As/InP MOSFET Characteristics 2012 ·ECS Transactions ·K. Cherkaoui,Vladimir Djara,Éamon O’Connor,Jun Lin,(unknown),Ian M. Povey,Scott Monaghan,Paul K. Hurley	1
14	Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric 2012 ·IEEE Transactions on Electron Devices ·Vladimir Djara,K. Cherkaoui,Michael Schmidt,Scott Monaghan,Eileen O’Connor,Ian M. Povey,Dan O’Connell,Martyn E. Pemble,Paul K. Hurley	41
15	Fluorine implantation in germanium for dopant diffusion control 2012 ·AIP conference proceedings ·Mohammad Reza Shayesteh,Vladimir Djara,Michael Schmidt,Mary Anne White,(unknown),Ray Duffy	5
16	A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers 2011 ·Journal of Applied Physics ·Eileen O’Connor,Barry Brennan,Vladimir Djara,K. Cherkaoui,Scott Monaghan,S. B. Newcomb,(unknown),Marko Milojević,G. Hughes,Martyn E. Pemble,Robert M. Wallace,Paul K. Hurley	111
17	(Invited) Investigation of High-κ/In_xGa_1-xAs Interfaces 2010 ·ECS Transactions ·K. Cherkaoui,Éamon O’Connor,Scott Monaghan,Rathnait Long,Vladimir Djara,Aileen O׳Mahony,Roger Nagle,Martyn E. Pemble,Paul K. Hurley	10
18	$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications 2009 ·IEEE Electron Device Letters ·Scott Monaghan,K. Cherkaoui,Eileen O’Connor,Vladimir Djara,Paul K. Hurley,L. Oberbeck,(unknown),L. Wilde,S. Teichert	25
19	Impact of the energy difference in LUMO and HOMO of the bulk heterojunctions components on the efficiency of organic solar cells 2007 ·Solar Energy Materials and Solar Cells ·(unknown),Vladimir Djara	40
20	Organic photovoltaic devices: influence of the cell configuration on its performences 2004 ·Solar Energy Materials and Solar Cells ·J.C. Bérnède,(unknown),Vladimir Djara	31

About Vladimir Djara

Vladimir Djara is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Polymers and Plastics, having authored 47 papers that have together received 780 indexed citations. Recurring topics across this work include Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers) and Semiconductor materials and interfaces (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (711 citations), Atomic and Molecular Physics, and Optics (211 citations) and Surfaces, Coatings and Films (34 citations). Vladimir Djara has collaborated with scholars based in Ireland, Switzerland and United States. Frequent co-authors include K. Cherkaoui, Paul K. Hurley, Scott Monaghan, Eileen O’Connor, J.C. Bérnède, Lukas Czornomaz, J. Fompeyrine, Veeresh Deshpande, Daniele Caimi and Martyn E. Pemble. Their work appears in journals such as Journal of Applied Physics, Macromolecules and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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