Vladimir Djara

1.0k total citations
47 papers, 780 citations indexed

About

Vladimir Djara is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Vladimir Djara has authored 47 papers receiving a total of 780 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in Vladimir Djara's work include Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers) and Semiconductor materials and interfaces (12 papers). Vladimir Djara is often cited by papers focused on Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers) and Semiconductor materials and interfaces (12 papers). Vladimir Djara collaborates with scholars based in Ireland, Switzerland and United States. Vladimir Djara's co-authors include Paul K. Hurley, K. Cherkaoui, Scott Monaghan, Eileen O’Connor, J.C. Bérnède, Daniele Caimi, Veeresh Deshpande, Lukas Czornomaz, J. Fompeyrine and Martyn E. Pemble and has published in prestigious journals such as Journal of Applied Physics, Macromolecules and IEEE Transactions on Electron Devices.

In The Last Decade

Vladimir Djara

46 papers receiving 758 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Vladimir Djara Ireland 17 711 211 210 178 62 47 780
Y. Yabuuchi Japan 10 311 0.4× 120 0.6× 152 0.7× 111 0.6× 90 1.5× 24 415
Gordon Grzybowski United States 14 472 0.7× 259 1.2× 218 1.0× 152 0.9× 11 0.2× 40 582
Christophe Defranoux France 11 511 0.7× 104 0.5× 145 0.7× 142 0.8× 216 3.5× 38 581
Mahmoud Chakaroun France 12 321 0.5× 85 0.4× 160 0.8× 72 0.4× 57 0.9× 43 391
Peiqi Zhou China 12 317 0.4× 113 0.5× 205 1.0× 112 0.6× 35 0.6× 36 436
X. M. Ding China 13 466 0.7× 94 0.4× 207 1.0× 71 0.4× 138 2.2× 21 552
Emmanouil Lioudakis Cyprus 13 316 0.4× 58 0.3× 282 1.3× 157 0.9× 72 1.2× 38 427
Ionel Stavarache Romania 15 430 0.6× 129 0.6× 400 1.9× 185 1.0× 34 0.5× 66 535
J. F. Bresse France 11 433 0.6× 150 0.7× 246 1.2× 51 0.3× 121 2.0× 46 510
Guoyang Cao China 12 363 0.5× 111 0.5× 209 1.0× 142 0.8× 73 1.2× 44 514

Countries citing papers authored by Vladimir Djara

Since Specialization
Citations

This map shows the geographic impact of Vladimir Djara's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Vladimir Djara with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Vladimir Djara more than expected).

Fields of papers citing papers by Vladimir Djara

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Vladimir Djara. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Vladimir Djara. The network helps show where Vladimir Djara may publish in the future.

Co-authorship network of co-authors of Vladimir Djara

This figure shows the co-authorship network connecting the top 25 collaborators of Vladimir Djara. A scholar is included among the top collaborators of Vladimir Djara based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Vladimir Djara. Vladimir Djara is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Deshpande, Veeresh, Vladimir Djara, Eileen O’Connor, et al.. (2016). DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration. Solid-State Electronics. 128. 87–91. 6 indexed citations
2.
Deshpande, Veeresh, Vladimir Djara, Eileen O’Connor, et al.. (2016). First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration. 127–130. 1 indexed citations
3.
Bufler, F. M., M. Frey, Veeresh Deshpande, et al.. (2016). Theoretical and experimental analysis of capacitance and mobility in InGaAs. 1–2. 2 indexed citations
4.
Pirro, Luca, Lukas Czornomaz, I. Ionica, et al.. (2016). Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms. Solid-State Electronics. 128. 80–86. 1 indexed citations
5.
Czornomaz, Lukas, Emanuele Uccelli, M. Sousa, et al.. (2015). Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates. DORA Empa (Swiss Federal Laboratories for Materials Science and Technology (Empa)). T172–T173. 53 indexed citations
6.
Deshpande, Veeresh, Vladimir Djara, Daniele Caimi, et al.. (2015). (Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology. ECS Transactions. 69(10). 131–142. 2 indexed citations
7.
Georgiev, Yordan M., Nikolay Petkov, Brendan McCarthy, et al.. (2014). Fully CMOS-compatible top-down fabrication of sub-50nm silicon nanowire sensing devices. Microelectronic Engineering. 118. 47–53. 12 indexed citations
8.
Gangnaik, Anushka, Yordan M. Georgiev, Brendan McCarthy, et al.. (2014). Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists. Microelectronic Engineering. 123. 126–130. 24 indexed citations
9.
Burke, Mícheál, Alan Blake, Vladimir Djara, et al.. (2014). High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 33(1). 14 indexed citations
10.
Djara, Vladimir, Terrance P. O’Regan, K. Cherkaoui, et al.. (2013). Electrically active interface defects in the In0.53Ga0.47As MOS system. Microelectronic Engineering. 109. 182–188. 20 indexed citations
11.
Shayesteh, Maryam, Karim Huet, Dan O’Connell, et al.. (2013). Atomically Flat Low-Resistive Germanide Contacts Formed by Laser Thermal Anneal. IEEE Transactions on Electron Devices. 60(7). 2178–2185. 21 indexed citations
12.
Djara, Vladimir, K. Cherkaoui, Eileen O’Connor, et al.. (2013). Junctionless InGaAs MOSFETs with InAlAs barrier isolation and channel thinning by digital wet etching. 312. 131–132. 5 indexed citations
13.
Djara, Vladimir, et al.. (2012). Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 °C. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(5). 12 indexed citations
14.
Shayesteh, Mohammad Reza, et al.. (2012). Fluorine implantation in germanium for dopant diffusion control. AIP conference proceedings. 115–118. 5 indexed citations
15.
Hobbs, Richard G., Michael Schmidt, Yordan M. Georgiev, et al.. (2012). Resist–substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(4). 18 indexed citations
16.
O’Connor, Eileen, Barry Brennan, Vladimir Djara, et al.. (2011). A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers. Journal of Applied Physics. 109(2). 111 indexed citations
17.
Cherkaoui, K., Éamon O’Connor, Scott Monaghan, et al.. (2010). (Invited) Investigation of High-κ/InxGa1-xAs Interfaces. ECS Transactions. 28(2). 181–190. 10 indexed citations
18.
19.
Monaghan, Scott, K. Cherkaoui, Eileen O’Connor, et al.. (2009). $\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications. IEEE Electron Device Letters. 30(3). 219–221. 25 indexed citations
20.
Djara, Vladimir, et al.. (2007). Impact of the energy difference in LUMO and HOMO of the bulk heterojunctions components on the efficiency of organic solar cells. Solar Energy Materials and Solar Cells. 91(13). 1163–1167. 40 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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