Iain Thayne

3.7k total citations
174 papers, 1.8k citations indexed

About

Iain Thayne is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Iain Thayne has authored 174 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 163 papers in Electrical and Electronic Engineering, 67 papers in Atomic and Molecular Physics, and Optics and 29 papers in Condensed Matter Physics. Recurrent topics in Iain Thayne's work include Semiconductor materials and devices (89 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers) and Semiconductor Quantum Structures and Devices (45 papers). Iain Thayne is often cited by papers focused on Semiconductor materials and devices (89 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers) and Semiconductor Quantum Structures and Devices (45 papers). Iain Thayne collaborates with scholars based in United Kingdom, United States and Australia. Iain Thayne's co-authors include K. Elgaid, David A. J. Moran, M. Holland, S. Thoms, Haiping Zhou, C.R. Stanley, D.S. Macintyre, Asen Asenov, Xu Li and Richard J. Hill and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and ACS Nano.

In The Last Decade

Iain Thayne

162 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Iain Thayne United Kingdom 23 1.5k 751 407 352 309 174 1.8k
H.L. Hartnagel Germany 21 1.6k 1.1× 867 1.2× 333 0.8× 131 0.4× 278 0.9× 178 1.9k
J. Kolodzey United States 24 2.2k 1.5× 1.1k 1.5× 830 2.0× 214 0.6× 413 1.3× 176 2.5k
T. S. Sudarshan United States 24 2.0k 1.3× 506 0.7× 1.1k 2.7× 99 0.3× 174 0.6× 169 2.3k
H. L. Hartnagel Germany 16 1.1k 0.7× 411 0.5× 571 1.4× 83 0.2× 228 0.7× 103 1.5k
P.C. Chao United States 28 2.3k 1.6× 1.4k 1.8× 203 0.5× 724 2.1× 139 0.4× 136 2.5k
M. Mikulla Germany 23 1.8k 1.3× 707 0.9× 196 0.5× 1.2k 3.5× 120 0.4× 149 2.1k
Yasunori Tokuda Japan 21 1.1k 0.7× 657 0.9× 257 0.6× 526 1.5× 246 0.8× 130 1.6k
K. Hinode Japan 26 1.2k 0.8× 588 0.8× 291 0.7× 523 1.5× 263 0.9× 106 1.8k
Tsutom Yotsuya Japan 20 497 0.3× 308 0.4× 319 0.8× 225 0.6× 320 1.0× 66 995
Arthur W. Lichtenberger United States 15 759 0.5× 234 0.3× 447 1.1× 154 0.4× 183 0.6× 102 1.3k

Countries citing papers authored by Iain Thayne

Since Specialization
Citations

This map shows the geographic impact of Iain Thayne's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Iain Thayne with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Iain Thayne more than expected).

Fields of papers citing papers by Iain Thayne

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Iain Thayne. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Iain Thayne. The network helps show where Iain Thayne may publish in the future.

Co-authorship network of co-authors of Iain Thayne

This figure shows the co-authorship network connecting the top 25 collaborators of Iain Thayne. A scholar is included among the top collaborators of Iain Thayne based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Iain Thayne. Iain Thayne is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Crawford, Kevin G., James Grant, Dilini Hemakumara, et al.. (2022). High synergy atomic layer etching of AlGaN/GaN with HBr and Ar. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 40(4). 3 indexed citations
2.
Hetherington, Crispin, et al.. (2021). Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth. physica status solidi (a). 219(4). 3 indexed citations
3.
Johansson, Jonas, et al.. (2020). Improved quality of InSb-on-insulator microstructures by flash annealing into melt. Nanotechnology. 32(16). 165602–165602. 7 indexed citations
4.
Das, P., Leanne A. H. Jones, James T. Gibbon, et al.. (2020). Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN. ECS Journal of Solid State Science and Technology. 9(6). 63003–63003. 5 indexed citations
5.
Li, Tao, Martyna Michalska, Mark Portnoi, et al.. (2020). Spacer-Defined Intrinsic Multiple Patterning. ACS Nano. 14(9). 12091–12100. 11 indexed citations
6.
Qian, Chenjiang, Xin Xie, Jingnan Yang, et al.. (2019). Enhanced Strong Interaction between Nanocavities and p-shell Excitons Beyond the Dipole Approximation. Physical Review Letters. 122(8). 87401–87401. 33 indexed citations
7.
Morozov, D., et al.. (2018). Design and Characterisation of Titanium Nitride Subarrays of Kinetic Inductance Detectors for Passive Terahertz Imaging. Journal of Low Temperature Physics. 193(3-4). 196–202. 6 indexed citations
9.
Pusino, Vincenzo, Ata Khalid, Matthew J. Steer, et al.. (2017). Single-chip, mid-infrared array for room temperature video rate imaging. Optica. 4(12). 1498–1498. 8 indexed citations
10.
Li, X., S. W. Chang, T. Vasen, et al.. (2016). InAs FinFETs With Hfinnm Fabricated Using a Top–Down Etch Process. IEEE Electron Device Letters. 37(3). 261–264. 19 indexed citations
11.
Xu, Li, et al.. (2015). Effect of SiH4 Inductively Coupled Plasma Surface Treatment On Low Temperature and Low Resistance Ohmic Contact for AlGaN/GaN-Based Power Device. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam).
12.
Steer, Matthew J., Ying Ding, Iain Thayne, et al.. (2015). Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry. Journal of Applied Physics. 117(6). 18 indexed citations
14.
Khalid, Ata, S. Thoms, Donald J. MacIntyre, Iain Thayne, & David R. S. Cumming. (2014). Fabrication of submicron planar Gunn diode. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 1–3. 2 indexed citations
15.
Holland, M., Xu Li, Gary W. Paterson, et al.. (2011). Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric. IEEE Electron Device Letters. 32(4). 494–496. 34 indexed citations
17.
Thayne, Iain, K. Elgaid, M. Holland, et al.. (2006). 50nm GaAs mHEMTs and MMICs for Ultra-Low Power Distributed Sensor Network Applications. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 6. 181–184. 3 indexed citations
18.
Thayne, Iain, et al.. (2003). Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InP HEMTs. Microelectronic Engineering. 67-68. 333–337. 10 indexed citations
19.
Li, X., et al.. (2001). Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering. 57-58. 633–640. 1 indexed citations
20.
Thayne, Iain, et al.. (1993). Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's. IEEE Transactions on Electron Devices. 40(6). 1047–1052. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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