Rathnait Long

403 total citations
11 papers, 376 citations indexed

About

Rathnait Long is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Rathnait Long has authored 11 papers receiving a total of 376 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 3 papers in Condensed Matter Physics. Recurrent topics in Rathnait Long's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and GaN-based semiconductor devices and materials (3 papers). Rathnait Long is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and GaN-based semiconductor devices and materials (3 papers). Rathnait Long collaborates with scholars based in United States, Ireland and United Kingdom. Rathnait Long's co-authors include Paul C. McIntyre, Paul K. Hurley, Byungha Shin, J. R. Weber, Chris G. Van de Walle, D. M. Zhernokletov, Shaul Aloni, Dennis Nordlund, Marika Gunji and Yoshio Nishi and has published in prestigious journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and Materials.

In The Last Decade

Rathnait Long

11 papers receiving 365 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Rathnait Long United States	8	338	151	130	125	89	11	376
H. C. Chiu Taiwan	11	518 1.5×	244 1.6×	214 1.6×	231 1.8×	120 1.3×	24	581
Quanbin Zhou China	12	224 0.7×	311 2.1×	133 1.0×	157 1.3×	79 0.9×	28	376
Rahul Suri United States	9	261 0.8×	98 0.6×	103 0.8×	74 0.6×	61 0.7×	12	282
O. Gelhausen Australia	9	131 0.4×	217 1.4×	220 1.7×	193 1.5×	52 0.6×	14	334
R. D. Long Ireland	10	348 1.0×	80 0.5×	150 1.2×	66 0.5×	129 1.4×	16	394
L. T. Tung Taiwan	9	337 1.0×	56 0.4×	155 1.2×	102 0.8×	92 1.0×	12	354
Toshiharu Kubo Japan	13	319 0.9×	319 2.1×	148 1.1×	212 1.7×	57 0.6×	27	423
Narumasa Soejima Japan	10	476 1.4×	402 2.7×	85 0.7×	208 1.7×	59 0.7×	20	550
Joshua Perozek United States	8	243 0.7×	306 2.0×	101 0.8×	158 1.3×	48 0.5×	13	355
Golnaz Karbasian United States	9	301 0.9×	92 0.6×	181 1.4×	66 0.5×	58 0.7×	17	359

Countries citing papers authored by Rathnait Long

Since Specialization

Citations

This map shows the geographic impact of Rathnait Long's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rathnait Long with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rathnait Long more than expected).

Fields of papers citing papers by Rathnait Long

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rathnait Long. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rathnait Long. The network helps show where Rathnait Long may publish in the future.

Co-authorship network of co-authors of Rathnait Long

This figure shows the co-authorship network connecting the top 25 collaborators of Rathnait Long. A scholar is included among the top collaborators of Rathnait Long based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Rathnait Long. Rathnait Long is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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11 of 11 papers shown

Zhernokletov, D. M., et al.. (2015). Interface Trap Density Reduction for Al₂O₃/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition. ACS Applied Materials & Interfaces. 7(23). 12774–12780. 44 indexed citations

Long, Rathnait & Paul C. McIntyre. (2012). Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices. Materials. 5(7). 1297–1335. 90 indexed citations

Long, Rathnait, et al.. (2012). Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN. Applied Physics Letters. 101(24). 28 indexed citations

Melitz, Wilhelm, Evgueni Chagarov, Tyler Kent, et al.. (2012). Mechanism of dangling bond elimination on As-rich InGaAs surface. 98. 32.4.1–32.4.4. 5 indexed citations

Cherkaoui, K., Éamon O’Connor, Scott Monaghan, et al.. (2010). (Invited) Investigation of High-κ/In_xGa_1-xAs Interfaces. ECS Transactions. 28(2). 181–190. 10 indexed citations

O׳Mahony, Aileen, Scott Monaghan, Ian M. Povey, et al.. (2010). Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al₂O₃ Deposited by Atomic Layer Deposition and Incorporated at the High-k/III-V Interface of MO₂/In_xGa_1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks. ECS Transactions. 33(2). 69–82. 7 indexed citations

Hurley, Paul K., Rathnait Long, Éamon O’Connor, et al.. (2010). (Invited) Equivalent Oxide Thickness Correction in the High-k/In_0.53Ga_0.47As/InP System. ECS Transactions. 33(3). 433–444. 6 indexed citations

Shin, Byungha, J. R. Weber, Rathnait Long, et al.. (2010). Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates. Applied Physics Letters. 96(15). 151 indexed citations

Miranda, E., Éamon O’Connor, P. Casey, et al.. (2009). Effects of the Semiconductor Substrate Material on the Post-breakdown Current of MgO Dielectric Layers. ECS Transactions. 25(6). 79–86. 1 indexed citations

10.

Shin, Byungha, Joël Cagnon, Rathnait Long, et al.. (2009). Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001). Electrochemical and Solid-State Letters. 12(8). G40–G40. 14 indexed citations

11.

Hurley, Paul K., Éamon O’Connor, Scott Monaghan, et al.. (2009). Structural and Electrical Properties of HfO2/n-In_xGa_1-xAs structures (x: 0, 0.15, 0.3 and 0.53). ECS Transactions. 25(6). 113–127. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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