Scott Monaghan

2.0k citations

90 papers · 1.7k indexed · h-index 24

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry top 5%
- 2D Materials and Applications
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials

Papers in ⓘ

Electrical and Electronic Engineering 74
- Semiconductor materials and devices 60
- Advancements in Semiconductor Devices and Circuit Design 31
- Ferroelectric and Negative Capacitance Devices 19
- Integrated Circuits and Semiconductor Failure Analysis 18
- Advanced Memory and Neural Computing 9
Atomic and Molecular Physics, and Optics 26
- Semiconductor materials and interfaces 22

Co-authors: Paul K. Hurley (78 shared papers)K. Cherkaoui (61 shared papers)Ian M. Povey (34 shared papers)Eileen O’Connor (22 shared papers)Farzan Gity (16 shared papers)Martyn E. Pemble (15 shared papers)G. Hughes (12 shared papers)S. B. Newcomb (9 shared papers)
Journals: Microelectronic Engineering (11 papers)Applied Physics Letters (10 papers)Journal of Applied Physics (9 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (3 papers)IEEE Transactions on Device and Materials Reliability (3 papers)
Partner nations: Ireland United Kingdom Spain

In The Last Decade

Scott Monaghan

87 papers receiving 1.6k citations

Peers

Countries citing papers authored by Scott Monaghan

Since Specialization

Citations

This map shows the geographic impact of Scott Monaghan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Scott Monaghan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Scott Monaghan more than expected).

Fields of papers citing papers by Scott Monaghan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Scott Monaghan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Scott Monaghan. The network helps show where Scott Monaghan may publish in the future.

Co-authors

The 25 scholars most cited alongside Scott Monaghan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Scott Monaghan Line = papers co-authored together Scott Monaghan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 90 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 Journal of Applied Physics ·Gioele Mirabelli, Conor McGeough, Michael Schmidt, Eoin K. McCarthy, Scott Monaghan, Ian M. Povey, M. McCarthy, Farzan Gity, Roger Nagle, G. Hughes, A.A. Cafolla, Paul K. Hurley, Ray Duffy	2016	155
2	Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes Nano Letters ·Chanyoung Yim, Niall McEvoy, Sarah Riazimehr, Daniel Schneider, Farzan Gity, Scott Monaghan, Paul K. Hurley, Max C. Lemme, Georg S. Duesberg	2018	148
3	A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers Journal of Applied Physics ·Eileen O’Connor, Barry Brennan, Vladimir Djara, K. Cherkaoui, Scott Monaghan, S. B. Newcomb, Rocio Contreras, Marko Milojević, G. Hughes, Martyn E. Pemble, Robert M. Wallace, Paul K. Hurley	2011	111
4	Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures Solid-State Electronics ·Scott Monaghan, Paul K. Hurley, K. Cherkaoui, Muhammad Adi Negara, Andreas Schenk	2009	101
5	Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods Applied Physics Letters ·Eileen O’Connor, Scott Monaghan, R. D. Long, Aileen O׳Mahony, Ian M. Povey, K. Cherkaoui, Martyn E. Pemble, Guy Brammertz, M. M. Heyns, S. B. Newcomb, V. V. Afanas’ev, Paul K. Hurley	2009	87
6	Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C npj 2D Materials and Applications ·Lida Ansari, Scott Monaghan, Niall McEvoy, Cormac Ó Coileáin, Conor P. Cullen, Jun Lin, Rita Siris, Tanja Stimpel‐Lindner, K. F. Burke, Gioele Mirabelli, Ray Duffy, Enrico Caruso, Roger Nagle, Georg S. Duesberg, Paul K. Hurley, Farzan Gity	2019	87
7	An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors Journal of Applied Physics ·Jun Lin, Y. Y. Gomeniuk, Scott Monaghan, Ian M. Povey, K. Cherkaoui, Éamon O’Connor, Máire Power, Paul K. Hurley	2013	58
8	Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation Journal of Applied Physics ·K. Cherkaoui, Scott Monaghan, Muhammad Adi Negara, M. Modreanu, Paul K. Hurley, Dan O’Connell, Stephen McDonnell, G. Hughes, Sandra Wright, R.C. Barklie, Paul Bailey, T.C.Q. Noakes	2008	50
9	Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment Applied Physics Letters ·Eileen O’Connor, Scott Monaghan, K. Cherkaoui, Ian M. Povey, Paul K. Hurley	2011	41
10	Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric IEEE Transactions on Electron Devices ·Vladimir Djara, K. Cherkaoui, Michael Schmidt, Scott Monaghan, Eileen O’Connor, Ian M. Povey, Dan O’Connell, Martyn E. Pemble, Paul K. Hurley	2012	41
11	Rhenium-doped MoS2 films Applied Physics Letters ·Toby Hallam, Scott Monaghan, Farzan Gity, Lida Ansari, Michael Schmidt, Clive Downing, Conor P. Cullen, Valeria Nicolosi, Paul K. Hurley, Georg S. Duesberg	2017	38
12	The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System IEEE Transactions on Device and Materials Reliability ·Paul K. Hurley, Éamon O’Connor, Vladimir Djara, Scott Monaghan, Ian M. Povey, R. D. Long, Brendan Sheehan, Jun Lin, Paul C. McIntyre, Barry Brennan, Robert M. Wallace, Martyn E. Pemble, K. Cherkaoui	2013	36
13	Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer Applied Physics Letters ·Aileen O׳Mahony, Scott Monaghan, G. Provenzano, Ian M. Povey, M. G. Nolan, Eileen O’Connor, K. Cherkaoui, S. B. Newcomb, Felice Crupi, Paul K. Hurley, Martyn E. Pemble	2010	35
14	Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors Journal of The Electrochemical Society ·R. D. Long, B. Shin, Scott Monaghan, K. Cherkaoui, Joël Cagnon, Susanne Stemmer, Paul C. McIntyre, Paul K. Hurley	2011	31
15	BRS Hamiltonian quantization of a spinless relativistic particle in relativistic gauges Physics Letters B ·Scott Monaghan	1986	26
16	Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Scott Monaghan, Aileen O׳Mahony, K. Cherkaoui, Eileen O’Connor, Ian M. Povey, M. G. Nolan, Dan O’Connell, Martyn E. Pemble, Paul K. Hurley, G. Provenzano, Felice Crupi, S. B. Newcomb	2011	26
17	$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications IEEE Electron Device Letters ·Scott Monaghan, K. Cherkaoui, Eileen O’Connor, Vladimir Djara, Paul K. Hurley, L. Oberbeck, E. Tois, L. Wilde, S. Teichert	2009	25
18	Back-gated Nb-doped MoS2 junctionless field-effect-transistors AIP Advances ·Gioele Mirabelli, Michael Schmidt, Brendan Sheehan, K. Cherkaoui, Scott Monaghan, Ian M. Povey, M. McCarthy, Alan P. Bell, Roger Nagle, Felice Crupi, Paul K. Hurley, Ray Duffy	2016	24
19	Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition Journal of Applied Physics ·R. D. Long, Eileen O’Connor, S. B. Newcomb, Scott Monaghan, K. Cherkaoui, P. Casey, G. Hughes, Kevin Thomas, Francis Chalvet, Ian M. Povey, Martyn E. Pemble, Paul K. Hurley	2009	24
20	Atomic scale model interfaces between high-khafnium silicates and silicon Physical Review B ·Scott Monaghan, James C. Greer, Simon D. Elliott	2007	23

About Scott Monaghan

Scott Monaghan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Industrial and Manufacturing Engineering and Hardware and Architecture, having authored 90 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor materials and interfaces (22 papers), Ferroelectric and Negative Capacitance Devices (19 papers), Integrated Circuits and Semiconductor Failure Analysis (18 papers), 2D Materials and Applications (13 papers), Electronic and Structural Properties of Oxides (10 papers) and Advanced Memory and Neural Computing (9 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.4k citations), Materials Chemistry (828 citations), Atomic and Molecular Physics, and Optics (428 citations), Surfaces, Coatings and Films (53 citations) and Electronic, Optical and Magnetic Materials (110 citations). Scott Monaghan has collaborated with scholars based in Ireland, United Kingdom and Spain. Frequent co-authors include Paul K. Hurley, K. Cherkaoui, Ian M. Povey, Eileen O’Connor, Farzan Gity, Martyn E. Pemble, G. Hughes, S. B. Newcomb, Georg S. Duesberg and Vladimir Djara. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, Journal of Applied Physics, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena and IEEE Transactions on Device and Materials Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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