Chao‐Hsin Wu

2.3k total citations
191 papers, 1.7k citations indexed

About

Chao‐Hsin Wu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Chao‐Hsin Wu has authored 191 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 169 papers in Electrical and Electronic Engineering, 79 papers in Atomic and Molecular Physics, and Optics and 29 papers in Materials Chemistry. Recurrent topics in Chao‐Hsin Wu's work include Semiconductor Lasers and Optical Devices (103 papers), Photonic and Optical Devices (98 papers) and Semiconductor Quantum Structures and Devices (70 papers). Chao‐Hsin Wu is often cited by papers focused on Semiconductor Lasers and Optical Devices (103 papers), Photonic and Optical Devices (98 papers) and Semiconductor Quantum Structures and Devices (70 papers). Chao‐Hsin Wu collaborates with scholars based in Taiwan, United States and Canada. Chao‐Hsin Wu's co-authors include N. Holonyak, M. Feng, Gong‐Ru Lin, Han Wui Then, Hao-Tien Cheng, G. Walter, Shih‐Yen Lin, Hao‐Chung Kuo, Hsuan-Yun Kao and Shu‐Wei Chang and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Chao‐Hsin Wu

167 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chao‐Hsin Wu Taiwan 22 1.5k 631 319 184 144 191 1.7k
Kwang Hong Lee Singapore 24 1.4k 0.9× 610 1.0× 309 1.0× 139 0.8× 493 3.4× 101 1.6k
G. Beadie United States 17 524 0.3× 351 0.6× 207 0.6× 96 0.5× 374 2.6× 67 991
M. Martin France 20 964 0.6× 618 1.0× 225 0.7× 39 0.2× 279 1.9× 71 1.1k
B. Hackens Belgium 22 648 0.4× 730 1.2× 687 2.2× 126 0.7× 178 1.2× 70 1.4k
Chun‐Yen Chang Taiwan 21 1.5k 1.0× 615 1.0× 431 1.4× 485 2.6× 205 1.4× 174 1.8k
Shichang Zou China 23 1.6k 1.1× 530 0.8× 349 1.1× 37 0.2× 209 1.5× 174 1.9k
Yong Tak Lee South Korea 22 1.1k 0.7× 600 1.0× 347 1.1× 89 0.5× 699 4.9× 126 1.7k
Ying Su Taiwan 17 612 0.4× 349 0.6× 364 1.1× 348 1.9× 210 1.5× 107 1.1k
Guoen Weng China 22 1.1k 0.7× 422 0.7× 828 2.6× 304 1.7× 85 0.6× 82 1.4k

Countries citing papers authored by Chao‐Hsin Wu

Since Specialization
Citations

This map shows the geographic impact of Chao‐Hsin Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chao‐Hsin Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chao‐Hsin Wu more than expected).

Fields of papers citing papers by Chao‐Hsin Wu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chao‐Hsin Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chao‐Hsin Wu. The network helps show where Chao‐Hsin Wu may publish in the future.

Co-authorship network of co-authors of Chao‐Hsin Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Chao‐Hsin Wu. A scholar is included among the top collaborators of Chao‐Hsin Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chao‐Hsin Wu. Chao‐Hsin Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xia, Guangrui, et al.. (2024). 80 Gbps PAM-4 Data Transmission With 940 nm VCSELs Grown on a 330 μm Ge Substrate. IEEE Electron Device Letters. 45(11). 2070–2073. 1 indexed citations
3.
Chen, Wei‐Hsin, et al.. (2024). 25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate. Optics Letters. 49(3). 586–586. 5 indexed citations
5.
Cheng, Hao-Tien, et al.. (2024). Electro-optical logics by three-terminal quantum-well-light-emitting transistors integration. Photonics Research. 12(8). A51–A51.
6.
Guo, Jia, Yunlong Zhao, Markus Feifel, et al.. (2023). Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates. Optical Materials Express. 13(4). 1077–1077. 5 indexed citations
7.
Cheng, Chih‐Hsien, Atsushi Matsumoto, Kouichi Akahane, et al.. (2023). 24.9-GHz-bandwidth VCSEL enables 170-Gbit/s OFDM, GFDM, and DMT transmissions. Photonics Research. 12(2). 377–377. 1 indexed citations
8.
Chang, Shu‐Wei, et al.. (2023). Analytical Modeling of Current Gain in Multiple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistors. IEEE Transactions on Electron Devices. 71(1). 343–349. 5 indexed citations
9.
Chang, Shu‐Wei, et al.. (2023). Current Gain Enhancement at High-Temperature Operation of Triple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistor for Smart Thermal Sensor Application. IEEE Transactions on Electron Devices. 71(1). 896–903. 4 indexed citations
11.
Cheng, Hao-Tien, Junyi Qiu, Chun‐Yen Peng, et al.. (2022). 29 GHz single-mode vertical-cavity surface-emitting lasers passivated by atomic layer deposition. Optics Express. 30(26). 47553–47553. 10 indexed citations
12.
Cheng, Hao-Tien, et al.. (2022). Recent Advances in 850 nm VCSELs for High-Speed Interconnects. Photonics. 9(2). 107–107. 42 indexed citations
13.
Cheng, Chih‐Hsien, et al.. (2021). Effect of Chirped Dispersion and Modal Partition Noise on Multimode VCSEL Encoded With NRZ-OOK and PAM-4 Formats. IEEE Journal of Selected Topics in Quantum Electronics. 28(1: Semiconductor Lasers). 1–9. 11 indexed citations
15.
Peng, Chun‐Yen, Hao-Tien Cheng, Hao‐Chung Kuo, & Chao‐Hsin Wu. (2020). Design and Optimization of VCSELs for up to 40-Gb/s Error-Free Transmission Through Impurity-Induced Disordering. IEEE Transactions on Electron Devices. 67(3). 1041–1046. 10 indexed citations
16.
Lan, Hao-Yu, et al.. (2019). Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting Transistor. IEEE Electron Device Letters. 41(1). 91–94. 5 indexed citations
17.
Wu, Chao‐Hsin, et al.. (2019). Effect of border traps on the threshold voltage instability of fluoride-doped AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors. Journal of Physics D Applied Physics. 52(19). 195102–195102. 12 indexed citations
18.
Wu, Chao‐Hsin, et al.. (2019). Threshold Voltage Modulation of Enhancement-Mode InGaAs Schottky-Gate Fin-HEMTs. IEEE Electron Device Letters. 40(4). 534–537. 3 indexed citations
19.
Feng, M., et al.. (2017). Resonance-free optical response of a vertical cavity transistor laser. Applied Physics Letters. 111(12). 7 indexed citations
20.
Su, Vin‐Cent, et al.. (2017). A comprehensive model for sub-10 nm electron-beam patterning through the short-time and cold development. Nanotechnology. 28(42). 425301–425301. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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