Zehao Lin

1.7k citations

67 papers · 1.3k indexed · 1 hit paper · h-index 21

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 36
- Thin-Film Transistor Technologies 35
- Advanced Memory and Neural Computing 13
- Advancements in Semiconductor Devices and Circuit Design 8
- Ferroelectric and Negative Capacitance Devices 6
Materials Chemistry top 10%
- ZnO doping and properties 20
- Electronic and Structural Properties of Oxides 10
Polymers and Plastics
- Transition Metal Oxide Nanomaterials 7
Electronic, Optical and Magnetic Materials
Biomedical Engineering

Co-authors: Peide D. Ye Mengwei Si Adam Charnas Haiyan Wang Xing Sun Zhuocheng Zhang Zhizhong Chen Dongqi Zheng
Cited by: Electrical and Electronic Engineering Materials Chemistry Polymers and Plastics
Journals: IEEE Transactions on Electron Devices (12 papers)IEEE Electron Device Letters (5 papers)Europhysics Letters (EPL) (5 papers)
Partner nations: United States China South Korea

In The Last Decade

Zehao Lin

60 papers receiving 1.2k citations

Hit Papers

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Peers

Countries citing papers authored by Zehao Lin

Since Specialization

Citations

This map shows the geographic impact of Zehao Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zehao Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zehao Lin more than expected).

Fields of papers citing papers by Zehao Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zehao Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zehao Lin. The network helps show where Zehao Lin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Zehao Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Zehao Lin Line = papers co-authored together Zehao Lin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Photo-responsive antibacterial metal organic frameworks Journal of Materials Chemistry B ·Deng Xinjie,Zehao Lin,Shen He,Yu Chen,Liang Chen	2025	2
2	Hypersensitive response of band gaps to strain in flexible two-dimensional Pmma SiC and GeC with high carrier mobility for simultaneous intelligent strain sensing and communication Materials Today Communications ·Zehao Lin,Qingyang Fan,はるみ有川,Qing Pang,Jin Z. Zhang,Dangli Gao,Yu-Ling Song	2025	0
3	Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors IEEE Transactions on Electron Devices ·Jie Zhang,Changjie Zhou,Hongyi Dou,Zhuocheng Zhang,Zehao Lin,Sagar S. Gulawani,X. Zhang,トシキヤマシタ,Huili Zhu,Weifeng Yang,Peide D. Ye	2025	1
4	Synergistic enhancement of thermoelectric performance in SnTe via Bi and Ge Co-doping Chemical Engineering Journal ·Minye Yang,Т. Н. Мелентьева,Hung Yu Young,I García,Zehao Lin,Rui Zhang,Jing Shuai,Yanglong Hou	2025	1
5	Critical Role of Quantum Confinement on Transfer Length in Achieving High-Performance In₂O₃ Transistors with Ultra-Scaled Contacted Gate Pitch M Serrenti,Chang Niu,Zehao Lin,C.H. Liu,Juanjuan Lu,トシキヤマシタ,Peide D. Ye	2025	0
6	Stable novel silicon allotropes in space group P2/m with various band gap structures by high-throughput screening Computational Materials Science ·Zehao Lin,Qingyang Fan,Qing Pang,Dangli Gao,Sining Yun	2024	1
7	Efficient photoelectrocatalytic degradation of tetracycline coupled with hydrogen production by N-doped carbon layer-wrapped TiO2 nanorods Journal of environmental chemical engineering ·Yan Li,Lili Yu,Jiayang Xie,Zilong Han,H.M.R. Hintzer,Thomas van Zonneveld,Zehao Lin,Li Li	2024	3
8	Quantum Confinement Controlled Positive to Negative Schottky Barrier Conversion in Ultrathin In₂O₃ Transistor Contacts M Serrenti,Chang Niu,Zehao Lin,Tae-Hyun Kim,Qiao Tengsheng,Seemit Shah,Changwook Jeong,Peide D. Ye	2024	2
9	The self-activated LiGa ₅ O ₈ storage phosphor: insights into its photo/thermo/mechano-stimulated NIR luminescence Journal of Materials Chemistry C ·Min Jia,Xiangyu Zhang,关俊龙,Zehao Lin,Dianzeng Jia,Yuqiang Wang,Sining Yun,Dangli Gao	2024	5
10	Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition IEEE Transactions on Electron Devices ·Jie Zhang,Zehao Lin,Zhuocheng Zhang,Sagar S. Gulawani,Hongyi Dou,Bo Yang,Adam Charnas,Dongqi Zheng,X. Zhang,Haiyan Wang,Peide D. Ye	2023	30
11	Review—Extremely Thin Amorphous Indium Oxide Transistors Advanced Materials ·Adam Charnas,Zhuocheng Zhang,Zehao Lin,Dongqi Zheng,Jie Zhang,Mengwei Si,Peide D. Ye	2023	55
12	Ultrahigh Bias Stability of ALD In₂O₃ FETs Enabled by High Temperature O₂ Annealing Zhuocheng Zhang,Zehao Lin,Chang Niu,Mengwei Si,Muhammad A. Alam,Peide D. Ye	2023	18
13	A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current IEEE Electron Device Letters ·Zhuocheng Zhang,Zehao Lin,Pai-Ying Liao,A.C. Ross,Hongyi Dou,Zhongxia Shang,Adam Charnas,Mengwei Si,凌德芳,Ali Shakouri,Haiyan Wang,Mark Lundstrom,Jesse Maassen,Peide D. Ye	2022	30
14	Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility Applied Physics Letters ·Zhuocheng Zhang,Zehao Lin,Mengwei Si,Di Zhang,Hongyi Dou,Zhizhong Chen,Adam Charnas,Haiyan Wang,Peide D. Ye	2022	9
15	Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition IEEE Electron Device Letters ·Jie Zhang,Dongqi Zheng,Zhuocheng Zhang,Adam Charnas,Zehao Lin,Peide D. Ye	2022	49
16	Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma Applied Physics Letters ·Jie Zhang,Adam Charnas,Zehao Lin,Dongqi Zheng,Zhuocheng Zhang,Pai-Ying Liao,Dmitry Zemlyanov,Peide D. Ye	2022	24
17	Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In ₂ O ₃ n-FET and Polycrystalline Si p-FET: Achieving Large Noise Margin and High Voltage Gain of 134 V/V 2022 International Electron Devices Meeting (IEDM) ·S. V. Babak,M. Njunga Mulikita,Zehao Lin,Claudia Cristina Ríos Rengifo,Pedro José Torreiro Reino,Xiangyou Li,P. D. Ye,Xiao Guo,Mengwei Si	2022	13
18	BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization IEEE Transactions on Electron Devices ·Mengwei Si,Felipe Gil-Castiñeira,Zehao Lin,Shaohan Feng,Junkang Li,Jinhyun Noh,凌德芳,Chang Niu,Xiao Lyu,Dongqi Zheng,Kerry Maize,Ali Shakouri,Suman Datta,Rakesh Agrawal,Peide D. Ye	2021	26
19	The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors IEEE Journal of the Electron Devices Society ·Mengwei Si,Zehao Lin,Jinhyun Noh,Junkang Li,Wonil Chung,Peide D. Ye	2020	17
20	Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor Nature Communications ·Enze Zhang,Gracie Fisk,Yichao Zou,Aluizio Hazin,Linfeng Ai,Zhudin Wang,Ce Huang,Shanshan Liu,Zehao Lin,Roberta Ö S̈immons,Ning Kang,H. Q. Xu,Wei Wang,Liang He,Jin Zou,Jinyu Liu,Zhiqiang Mao,Faxian Xiu	2018	25

About Zehao Lin

Zehao Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Electronic, Optical and Magnetic Materials and Ceramics and Composites, having authored 67 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (36 papers), Thin-Film Transistor Technologies (35 papers), ZnO doping and properties (20 papers), Advanced Memory and Neural Computing (13 papers), Electronic and Structural Properties of Oxides (10 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Transition Metal Oxide Nanomaterials (7 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (628 citations), Polymers and Plastics (89 citations), Electronic, Optical and Magnetic Materials (106 citations) and Biomedical Engineering (182 citations). Zehao Lin has collaborated with scholars based in United States, China and South Korea. Frequent co-authors include Peide D. Ye, Mengwei Si, Adam Charnas, Haiyan Wang, Xing Sun, Zhuocheng Zhang, Zhizhong Chen, Dongqi Zheng, Jie Zhang and Kyeongjae Cho. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Europhysics Letters (EPL), Applied Physics Letters and Nano Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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