Hagyoul Bae

2.2k total citations
104 papers, 1.6k citations indexed

About

Hagyoul Bae is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Hagyoul Bae has authored 104 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 94 papers in Electrical and Electronic Engineering, 30 papers in Materials Chemistry and 23 papers in Biomedical Engineering. Recurrent topics in Hagyoul Bae's work include Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Thin-Film Transistor Technologies (25 papers). Hagyoul Bae is often cited by papers focused on Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Thin-Film Transistor Technologies (25 papers). Hagyoul Bae collaborates with scholars based in South Korea, United States and United Kingdom. Hagyoul Bae's co-authors include Yang‐Kyu Choi, Seung‐Bae Jeon, Dae Hwan Kim, Dong Myong Kim, Jun-Young Park, Choong‐Ki Kim, Sung‐Yool Choi, Byung-Hyun Lee, Sung Gap Im and Mengwei Si and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and ACS Nano.

In The Last Decade

Hagyoul Bae

95 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hagyoul Bae South Korea 24 1.3k 568 308 223 167 104 1.6k
Jer‐Chyi Wang Taiwan 22 1.2k 0.9× 463 0.8× 274 0.9× 222 1.0× 124 0.7× 130 1.5k
Anh Tuấn Hoàng South Korea 18 1.0k 0.8× 911 1.6× 519 1.7× 194 0.9× 121 0.7× 37 1.7k
Shuchao Qin China 18 759 0.6× 610 1.1× 223 0.7× 228 1.0× 116 0.7× 45 1.1k
Cezhou Zhao China 22 1.5k 1.1× 416 0.7× 218 0.7× 254 1.1× 340 2.0× 80 1.8k
Mengxing Sun China 23 1.2k 0.9× 995 1.8× 443 1.4× 252 1.1× 148 0.9× 37 1.6k
Xiao Qiu Hong Kong 14 1.0k 0.8× 391 0.7× 318 1.0× 199 0.9× 124 0.7× 24 1.3k
Sonali Das United States 14 899 0.7× 613 1.1× 251 0.8× 152 0.7× 85 0.5× 24 1.2k
Yutao Li China 18 739 0.6× 546 1.0× 440 1.4× 175 0.8× 115 0.7× 64 1.2k
Mrinal K. Hota India 21 951 0.7× 585 1.0× 356 1.2× 325 1.5× 370 2.2× 59 1.4k
Seongin Hong South Korea 20 857 0.6× 710 1.3× 263 0.9× 156 0.7× 81 0.5× 63 1.2k

Countries citing papers authored by Hagyoul Bae

Since Specialization
Citations

This map shows the geographic impact of Hagyoul Bae's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hagyoul Bae with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hagyoul Bae more than expected).

Fields of papers citing papers by Hagyoul Bae

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hagyoul Bae. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hagyoul Bae. The network helps show where Hagyoul Bae may publish in the future.

Co-authorship network of co-authors of Hagyoul Bae

This figure shows the co-authorship network connecting the top 25 collaborators of Hagyoul Bae. A scholar is included among the top collaborators of Hagyoul Bae based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hagyoul Bae. Hagyoul Bae is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Park, Sungjune, et al.. (2025). Improved electrical contact to multilayer MoS2-based field-effect transistor by tunable tellurium substitutional doping via MOCVD. Materials Science in Semiconductor Processing. 188. 109244–109244. 2 indexed citations
2.
3.
Yoo, Jae‐Hyoung, Taehwan Moon, Jin‐Ha Hwang, et al.. (2025). Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs. Applied Physics Letters. 126(6). 1 indexed citations
4.
Yoo, Jaewook, et al.. (2025). Advanced characterization of density-of-states over wide bandgap-energy in p-type Cu2O TFTs by multiple-wavelength light source. Applied Physics Letters. 127(7). 1 indexed citations
5.
Yoo, Jaewook, et al.. (2025). Comparative analysis of charge-trap sensitivity and stability in MoTe 2 and WS 2 field -effect transistors. Physica Scripta. 100(12). 125910–125910.
6.
Bhuyan, Priyanuj, Mukesh Singh, Hagyoul Bae, Tae‐Wan Kim, & Sungjune Park. (2025). Achieving exceptional elasto-dielectric properties in soft and stretchable elastomers through liquid metal particle incorporation: a comprehensive insight into fundamentals and multifaceted applications. Advanced Composites and Hybrid Materials. 8(4).
7.
Koo, Ja Choon, Dong‐Hwan Kim, Chengyu Zhu, et al.. (2025). High‐Performance Ultra‐Wide‐Bandgap CaSnO 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistors. Advanced Electronic Materials. 11(19).
8.
Jeon, Jeong Woo, Junho Lee, Chan‐Woo Lee, et al.. (2025). Defect Formation and Electrical Transformation in SiO2 Thin Films via Ti-Induced Interdiffusion. Acta Materialia. 296. 121313–121313.
9.
Lee, Hyun Jae, Taehwan Moon, Seung‐Geol Nam, et al.. (2024). Interfacial Layer Selection Methodology for Customized Ferroelectric Memories. IEEE Transactions on Electron Devices. 71(3). 1907–1912. 1 indexed citations
10.
Kim, Soyeon, Jaewook Yoo, Hyeonjun Song, et al.. (2024). Characterization of bulk trap density using fully I–V-based optoelectronic differential ideality factor in multi-layer MoS2 FETs. Journal of Physics D Applied Physics. 57(48). 485106–485106. 1 indexed citations
11.
Bae, Hagyoul, Jaewook Yoo, Kihyun Kim, et al.. (2024). Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET. Solid-State Electronics. 215. 108882–108882. 1 indexed citations
12.
Symonowicz, Joanna, Nives Strkalj, Taehwan Moon, et al.. (2023). In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories. Advanced Functional Materials. 33(22). 29 indexed citations
13.
Yoo, Jaewook, et al.. (2023). Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications. Electronics. 12(10). 2297–2297. 17 indexed citations
14.
Noh, Jinhyun, Hagyoul Bae, Junkang Li, et al.. (2021). First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment. IEEE Transactions on Electron Devices. 68(5). 2515–2521. 27 indexed citations
15.
Bae, Hagyoul, Taehwan Moon, Kwanghee Lee, et al.. (2021). Ferroelectric Diodes with Sub-ns and Sub-fJ Switching and Its Programmable Network for Logic-in-Memory Applications. Symposium on VLSI Technology. 6 indexed citations
16.
Lee, Byung-Hyun, Seongyeon Kim, Jun-Young Park, et al.. (2019). Nanoscale FET-Based Transduction toward Sensitive Extended-Gate Biosensors. ACS Sensors. 4(6). 1724–1729. 33 indexed citations
17.
Noh, Jinhyun, Peide D. Ye, Marko J. Tadjer, et al.. (2019). High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate. IEEE Journal of the Electron Devices Society. 7. 914–918. 50 indexed citations
18.
Seo, Myungsoo, Min‐Ho Kang, Seung‐Bae Jeon, et al.. (2018). First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications. IEEE Electron Device Letters. 39(9). 1445–1448. 134 indexed citations
19.
Bae, Hagyoul, Jinhyun Noh, Sami Alghamdi, Mengwei Si, & Peide D. Ye. (2018). Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga2O3 FETs. IEEE Electron Device Letters. 39(11). 1708–1711. 17 indexed citations
20.
Kim, Choongki, Eun Gyo Jeong, Eungtaek Kim, et al.. (2016). Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation. Nanotechnology. 28(5). 55203–55203. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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