Jinhyun Noh

565 citations

23 papers · 449 indexed · h-index 13

Co-authors: Peide D. Ye Mengwei Si Hagyoul Bae Soon Young Lee Ali Shakouri Wonil Chung Jongwoo Park Semyung Wang
Topics: Semiconductor materials and devices (10 papers)Ga2O3 and related materials (9 papers)ZnO doping and properties (8 papers)
Cited by: Electronic, Optical and Magnetic Materials Hardware and Architecture Electrical and Electronic Engineering
Journals: Applied Physics Letters Scientific Reports IEEE Transactions on Electron Devices
Partner nations: United States South Korea China

In The Last Decade

Jinhyun Noh

23 papers receiving 442 citations

Peers

Countries citing papers authored by Jinhyun Noh

Since Specialization

Citations

This map shows the geographic impact of Jinhyun Noh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jinhyun Noh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jinhyun Noh more than expected).

Fields of papers citing papers by Jinhyun Noh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jinhyun Noh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jinhyun Noh. The network helps show where Jinhyun Noh may publish in the future.

Co-authorship network of co-authors of Jinhyun Noh

This figure shows the co-authorship network connecting the top 25 collaborators of Jinhyun Noh. A scholar is included among the top collaborators of Jinhyun Noh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jinhyun Noh. Jinhyun Noh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Improvement of flicker phenomenon at low frequencies in AMOLED displays by applying compensation scheme of variable reset voltage 2025 ·Scientific Reports ·(unknown),Su‐Jin Jung,(unknown),Jinhyun Noh,I. Sak Lee,(unknown),Sang‐Yoon Park,Hyun Jae Kim	2
2	Enhancement of Thermal Transfer From β-Ga₂O₃ Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer 2022 ·IEEE Transactions on Electron Devices ·Jinhyun Noh,Prabudhya Roy Chowdhury,(unknown),(unknown),Mengwei Si,Adam Charnas,Shouyuan Huang,Kerry Maize,Ali Shakouri,Xianfan Xu,Xiulin Ruan,Peide D. Ye	17
3	Alleviation of Self-Heating Effect in Top-Gated Ultrathin In₂O₃ FETs Using a Thermal Adhesion Layer 2022 ·IEEE Transactions on Electron Devices ·Pai-Ying Liao,(unknown),(unknown),(unknown),Jinhyun Noh,Mengwei Si,Zhuocheng Zhang,Ali Shakouri,Xiulin Ruan,Peide D. Ye	10
4	Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs on Various Thermally Conductive Substrates Including Diamond 2022 ·2022 International Electron Devices Meeting (IEDM) ·Pai-Ying Liao,(unknown),Z. Zhang,Zehao Lin,Mengwei Si,Jinhyun Noh,Tatyana I. Feygelson,Marko J. Tadjer,Ali Shakouri,P. D. Ye	10
5	Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In₂O₃ FETs 2022 ·2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Pai-Ying Liao,(unknown),Mengwei Si,Zhuocheng Zhang,Zehao Lin,Jinhyun Noh,(unknown),Ali Shakouri,Peide D. Ye	8
6	BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization 2021 ·IEEE Transactions on Electron Devices ·Mengwei Si,(unknown),Zehao Lin,(unknown),Junkang Li,Jinhyun Noh,(unknown),Chang Niu,Xiao Lyu,Dongqi Zheng,Kerry Maize,Ali Shakouri,Suman Datta,Rakesh Agrawal,Peide D. Ye	26
7	First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment 2021 ·IEEE Transactions on Electron Devices ·Jinhyun Noh,Hagyoul Bae,Junkang Li,Yandong Luo,Yiming Qu,Tae Joon Park,Mengwei Si,Xuegang Chen,Adam Charnas,Wonil Chung,Xiaochen Peng,Shriram Ramanathan,Shimeng Yu,Peide D. Ye	27
8	First demonstration of robust tri-gate β-Ga₂O₃ nano-membrane field-effect transistors 2021 ·Nanotechnology ·Hagyoul Bae,Tae Joon Park,Jinhyun Noh,Wonil Chung,Mengwei Si,Shriram Ramanathan,Peide D. Ye	12
9	The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors 2020 ·IEEE Journal of the Electron Devices Society ·Mengwei Si,Zehao Lin,Jinhyun Noh,Junkang Li,Wonil Chung,Peide D. Ye	17
10	High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate 2019 ·IEEE Journal of the Electron Devices Society ·Jinhyun Noh,Peide D. Ye,(unknown),Marko J. Tadjer,James C. Culbertson,Hagyoul Bae,Mengwei Si,Hong Zhou,Peter Bermel,Ali Shakouri	50
11	Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu₂O and Nanomembrane β-Ga₂O₃ pn Oxide Heterojunction 2019 ·ACS Omega ·Hagyoul Bae,Adam Charnas,Xing Sun,Jinhyun Noh,Mengwei Si,Wonil Chung,Gang Qiu,Xiao Lyu,Sami Alghamdi,Haiyan Wang,Dmitry Zemlyanov,Peide D. Ye	42
12	(Invited) Raman Thermography of β-Ga₂O₃ Nanomembrane FETs on Diamond 2019 ·ECS Meeting Abstracts ·Marko J. Tadjer,Jinhyun Noh,James C. Culbertson,(unknown),Mengwei Si,Hong Zhou,Ali Shakouri,Peide D. Ye	1
13	Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga₂O₃ FETs 2018 ·IEEE Electron Device Letters ·Hagyoul Bae,Jinhyun Noh,Sami Alghamdi,Mengwei Si,Peide D. Ye	17
14	The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond 2018 ·Jinhyun Noh,Mengwei Si,Hong Zhou,Marko J. Tadjer,Peide D. Ye	15
15	Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface 2018 ·Applied Physics Letters ·Raktim Sarma,Salvatore Campione,Michael Goldflam,(unknown),Jinhyun Noh,Sean W. Smith,Peide D. Ye,Michael B. Sinclair,John F. Klem,Joel R. Wendt,Isaac Ruiz,Stephen W. Howell,Igal Brener	10
16	A metasurface optical modulator using voltage-controlled population of quantum well states 2018 ·Applied Physics Letters ·Raktim Sarma,Salvatore Campione,Michael Goldflam,(unknown),Jinhyun Noh,(unknown),M. D. Lange,Peide D. Ye,Joel R. Wendt,Isaac Ruiz,Stephen W. Howell,Michael B. Sinclair,Michael C. Wanke,Igal Brener	7
17	Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices 2015 ·Soon Young Lee,Il-Gon Kim,(unknown),(unknown),Jinhyun Noh,Sangwoo Pae,Jongwoo Park	61
18	Structural effects on heat dissipation in InGaAs MHEMTs 2013 ·Semiconductor Science and Technology ·Jinhyun Noh,(unknown),(unknown),Ho‐Young Cha,Kwang-Seok Seo	3
19	Overcoming DRAM scaling limitations by employing straight recessed channel array transistors with >100< uni-axial and [100] uni-plane channels 2006 ·(unknown),(unknown),(unknown),(unknown),Jinhyun Noh,J.‐H. Lee,(unknown),(unknown),(unknown),(unknown),(unknown)	4
20	Topology Optimization of a Single-Phase Induction Motor for Rotary Compressor 2004 ·IEEE Transactions on Magnetics ·Semyung Wang,Jang‐Won Kang,Jinhyun Noh	26

About Jinhyun Noh

Jinhyun Noh is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 23 papers that have together received 449 indexed citations. Recurring topics across this work include Semiconductor materials and devices (10 papers), Ga2O3 and related materials (9 papers) and ZnO doping and properties (8 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (173 citations), Hardware and Architecture (45 citations) and Electrical and Electronic Engineering (288 citations). Jinhyun Noh has collaborated with scholars based in United States, South Korea and China. Frequent co-authors include Peide D. Ye, Mengwei Si, Hagyoul Bae, Soon Young Lee, Ali Shakouri, Wonil Chung, Jongwoo Park, Semyung Wang, Sangwoo Pae and Jang‐Won Kang. Their work appears in journals such as Applied Physics Letters, Scientific Reports and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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