Leonard F. Register
About
In The Last Decade
Leonard F. Register
166 papers receiving 2.4k citations
Peers
Comparison fields: 5 of 50
- Electrical and Electronic Engineering 1.7k
- Materials Chemistry 1.2k
- Atomic and Molecular Physics, and Optics 946
- Biomedical Engineering 278
- Condensed Matter Physics 175
Countries citing papers authored by Leonard F. Register
This map shows the geographic impact of Leonard F. Register's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Leonard F. Register with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Leonard F. Register more than expected).
Fields of papers citing papers by Leonard F. Register
This network shows the impact of papers produced by Leonard F. Register. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Leonard F. Register. The network helps show where Leonard F. Register may publish in the future.
Co-authorship network of co-authors of Leonard F. Register
This figure shows the co-authorship network connecting the top 25 collaborators of Leonard F. Register. A scholar is included among the top collaborators of Leonard F. Register based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Leonard F. Register. Leonard F. Register is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 2 | |
| 2 | 0 | |
| 3 | 3 | |
| 4 | 2 | |
| 5 | 2 | |
| 6 | 1 | |
| 7 | 4 | |
| 8 | 44 | |
| 9 | 11 | |
| 10 | Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FETs | 1 |
| 11 | 43 | |
| 12 | 11 | |
| 13 | 22 | |
| 14 | 1 | |
| 15 | 4 | |
| 16 | 3 | |
| 17 | 1 | |
| 18 | 1 | |
| 19 | Hot carrier induced degradation in deep submicron MOSFETs at 100 °C | 21 |
| 20 | 18 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.