Hongyi Dou

461 total citations
37 papers, 315 citations indexed

About

Hongyi Dou is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hongyi Dou has authored 37 papers receiving a total of 315 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hongyi Dou's work include Advanced Memory and Neural Computing (13 papers), Semiconductor materials and devices (11 papers) and ZnO doping and properties (10 papers). Hongyi Dou is often cited by papers focused on Advanced Memory and Neural Computing (13 papers), Semiconductor materials and devices (11 papers) and ZnO doping and properties (10 papers). Hongyi Dou collaborates with scholars based in United States, China and United Kingdom. Hongyi Dou's co-authors include Haiyan Wang, Zehao Lin, X. Zhang, Di Zhang, Peide D. Ye, Adam Charnas, Judith L. MacManus‐Driscoll, Zhuocheng Zhang, Q. X. Jia and Mengwei Si and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Applied Physics Letters.

In The Last Decade

Hongyi Dou

31 papers receiving 313 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hongyi Dou United States 11 243 129 69 39 36 37 315
K. Shubhakar Singapore 13 402 1.7× 149 1.2× 34 0.5× 26 0.7× 36 1.0× 42 451
Beitao Ren Hong Kong 10 306 1.3× 184 1.4× 30 0.4× 49 1.3× 32 0.9× 15 357
Sanghun Jeon South Korea 9 363 1.5× 217 1.7× 33 0.5× 47 1.2× 29 0.8× 13 397
Kyung-Mun Kang South Korea 12 261 1.1× 251 1.9× 105 1.5× 29 0.7× 17 0.5× 16 357
Ribwar Ahmadi Canada 10 227 0.9× 196 1.5× 33 0.5× 80 2.1× 28 0.8× 19 337
Zhongnan Xi China 11 326 1.3× 310 2.4× 103 1.5× 60 1.5× 27 0.8× 19 457
Sung Jin Yang South Korea 9 251 1.0× 146 1.1× 49 0.7× 34 0.9× 25 0.7× 19 313
Nam-Kwang Cho South Korea 13 306 1.3× 197 1.5× 49 0.7× 40 1.0× 11 0.3× 18 348
Sujuan Hu China 12 352 1.4× 208 1.6× 47 0.7× 68 1.7× 20 0.6× 24 422
Laura Bégon‐Lours Switzerland 11 374 1.5× 209 1.6× 52 0.8× 28 0.7× 36 1.0× 24 430

Countries citing papers authored by Hongyi Dou

Since Specialization
Citations

This map shows the geographic impact of Hongyi Dou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hongyi Dou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hongyi Dou more than expected).

Fields of papers citing papers by Hongyi Dou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hongyi Dou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hongyi Dou. The network helps show where Hongyi Dou may publish in the future.

Co-authorship network of co-authors of Hongyi Dou

This figure shows the co-authorship network connecting the top 25 collaborators of Hongyi Dou. A scholar is included among the top collaborators of Hongyi Dou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hongyi Dou. Hongyi Dou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xiao, Ming, Markus Hellenbrand, Nives Strkalj, et al.. (2025). Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing. Advanced Functional Materials. 35(29). 2 indexed citations
2.
Zhang, Jie, Changjie Zhou, Hongyi Dou, et al.. (2025). Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors. IEEE Transactions on Electron Devices. 72(8). 4156–4162. 1 indexed citations
3.
Wang, Jiaxi, Jiaqing Li, Yuexiang Lu, et al.. (2025). Assembling metal nanoclusters with high luminescence performance and anti-interference ability for sensing p-nitrophenol. Analytica Chimica Acta. 1354. 344009–344009.
4.
Dou, Hongyi, Cun Li, Juanjuan Lu, et al.. (2025). An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing. Advanced Functional Materials. 36(10).
5.
Dou, Hongyi, Yuexiang Lu, Xiwen Zhang, Jiaxi Wang, & Yueying Liu. (2025). Carbon quantum dots/copper nanoclusters/metal ions assemble for a ratiometric fluorescence determination of an anthrax biomarker through ligand displacement strategy. Sensors and Actuators B Chemical. 441. 138063–138063. 2 indexed citations
6.
Zhang, Di, Rohan Dhall, Matthew M. Schneider, et al.. (2025). In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device. Advanced Functional Materials.
7.
8.
Dou, Hongyi, Yizhi Zhang, Eric Hollander, et al.. (2024). Integration of CeO2-Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses. ACS Applied Materials & Interfaces. 16(47). 64951–64962. 8 indexed citations
9.
Lin, Zehao, Chang Niu, Hongyi Dou, et al.. (2024). Highly Robust All-Oxide Transistors Toward Vertical Logic and Memory. IEEE Transactions on Electron Devices. 71(12). 7984–7991. 4 indexed citations
10.
Zhang, Jie, Zehao Lin, Zhuocheng Zhang, et al.. (2023). Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition. IEEE Transactions on Electron Devices. 70(12). 6651–6657. 30 indexed citations
11.
He, Zihao, Hongyi Dou, Yizhi Zhang, et al.. (2023). Epitaxial Growth of Aurivillius Bi3Fe2Mn2Ox Supercell Thin Films on Silicon. Crystal Growth & Design. 23(4). 2248–2256. 6 indexed citations
12.
Zhang, Yizhi, Jiawei Song, Ping Lu, et al.. (2023). Tunable Magnetic and Optical Anisotropy in ZrO2‐Co Vertically Aligned Nanocomposites. Advanced Materials Interfaces. 10(21). 6 indexed citations
13.
Lu, Juanjuan, Di Zhang, Zihao He, et al.. (2023). Abnormal in-plane epitaxy and formation mechanism of vertically aligned Au nanopillars in self-assembled CeO2–Au metamaterial systems. Materials Horizons. 10(8). 3101–3113. 8 indexed citations
14.
Dou, Hongyi, Markus Hellenbrand, Ming Xiao, et al.. (2023). Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties. Advanced Electronic Materials. 9(5). 13 indexed citations
15.
Song, Jiawei, Di Zhang, Ping Lu, et al.. (2023). Self-Assembled Complex Three-Phase Core–Shell Nanostructure of Au–CoFe2–TiN with a Magneto-Optical Coupling Effect. ACS Applied Materials & Interfaces. 15(31). 37810–37817. 7 indexed citations
16.
Zhang, Zhuocheng, Zehao Lin, Pai-Ying Liao, et al.. (2022). A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current . IEEE Electron Device Letters. 43(11). 1905–1908. 30 indexed citations
17.
Zhang, Zhuocheng, Zehao Lin, Mengwei Si, et al.. (2022). Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility. Applied Physics Letters. 120(20). 9 indexed citations
18.
Dou, Hongyi, et al.. (2022). Single-Step Fabrication of Au-Fe-BaTiO3 Nanocomposite Thin Films Embedded with Non-Equilibrium Au-Fe Alloyed Nanostructures. Nanomaterials. 12(19). 3460–3460. 6 indexed citations
19.
Zheng, Dongqi, Adam Charnas, Hongyi Dou, et al.. (2022). First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability. 2022 International Electron Devices Meeting (IEDM). 4.3.1–4.3.4. 27 indexed citations
20.
Yun, Chao, Matthew Webb, Weiwei Li, et al.. (2021). High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3. Journal of Materials Chemistry C. 9(13). 4522–4531. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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