Mark Lundstrom

26.8k total citations · 7 hit papers
356 papers, 20.2k citations indexed

About

Mark Lundstrom is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Mark Lundstrom has authored 356 papers receiving a total of 20.2k indexed citations (citations by other indexed papers that have themselves been cited), including 273 papers in Electrical and Electronic Engineering, 143 papers in Atomic and Molecular Physics, and Optics and 104 papers in Materials Chemistry. Recurrent topics in Mark Lundstrom's work include Advancements in Semiconductor Devices and Circuit Design (182 papers), Semiconductor materials and devices (146 papers) and Semiconductor Quantum Structures and Devices (78 papers). Mark Lundstrom is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (182 papers), Semiconductor materials and devices (146 papers) and Semiconductor Quantum Structures and Devices (78 papers). Mark Lundstrom collaborates with scholars based in United States, Canada and Singapore. Mark Lundstrom's co-authors include Jing Guo, Supriyo Datta, Ali Javey, Hongjie Dai, Qian Wang, Zhibin Ren, Dmitri E. Nikonov, Anisur Rahman, Jing Guo and Gerhard Klimeck and has published in prestigious journals such as Nature, Science and Physical Review Letters.

In The Last Decade

Mark Lundstrom

346 papers receiving 19.5k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ballistic carbon nanotube field-effect transistors

2003 2.4k citations Ali Javey, Jing Guo et al. profile →
Fundamentals of Carrier Transport

2000 1.1k citations Mark Lundstrom profile →
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

2002 782 citations Ali Javey, Hyoungsub Kim et al. Nature Materials profile →
Theory of ballistic nanotransistors

2003 586 citations Supriyo Datta, Mark Lundstrom et al. profile →
Sub-10 nm Carbon Nanotube Transistor

2012 561 citations Mark Lundstrom et al. profile →
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus

2015 542 citations Zhe Luo, Jesse Maassen et al. Nature Communications profile →
Elementary scattering theory of the Si MOSFET

1997 444 citations Mark Lundstrom IEEE Electron Device Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Mark Lundstrom United States	67	13.8k	10.4k	6.0k	4.9k	657	356	20.2k
Yu-Ming Lin United States	36	6.2k 0.4×	9.8k 0.9×	3.2k 0.5×	3.2k 0.7×	512 0.8×	103	12.0k
Michael S. Fuhrer United States	63	8.3k 0.6×	16.3k 1.6×	6.8k 1.1×	5.3k 1.1×	660 1.0×	231	20.8k
Adrian Bachtold Spain	45	4.4k 0.3×	7.2k 0.7×	6.4k 1.1×	2.8k 0.6×	215 0.3×	95	11.4k
H. J. Queisser Germany	34	11.8k 0.9×	8.2k 0.8×	4.4k 0.7×	1.8k 0.4×	706 1.1×	135	15.0k
Junichiro Kono United States	61	5.5k 0.4×	6.9k 0.7×	6.0k 1.0×	3.3k 0.7×	813 1.2×	330	13.3k
Jiwoong Park United States	53	9.8k 0.7×	15.7k 1.5×	6.5k 1.1×	4.5k 0.9×	302 0.5×	107	21.5k
E. H. Hwang United States	61	6.7k 0.5×	13.3k 1.3×	7.8k 1.3×	3.1k 0.6×	439 0.7×	203	17.1k
Roman Gorbachev United Kingdom	46	6.1k 0.4×	14.2k 1.4×	5.9k 1.0×	3.1k 0.6×	326 0.5×	93	16.9k
Ole Hansen Denmark	62	7.0k 0.5×	4.7k 0.5×	4.8k 0.8×	3.0k 0.6×	235 0.4×	530	15.7k
Л. А. Пономаренко United Kingdom	34	4.6k 0.3×	12.0k 1.2×	5.5k 0.9×	2.8k 0.6×	199 0.3×	97	14.5k

Countries citing papers authored by Mark Lundstrom

Since Specialization

Citations

This map shows the geographic impact of Mark Lundstrom's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark Lundstrom with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark Lundstrom more than expected).

Fields of papers citing papers by Mark Lundstrom

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark Lundstrom. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark Lundstrom. The network helps show where Mark Lundstrom may publish in the future.

Co-authorship network of co-authors of Mark Lundstrom

This figure shows the co-authorship network connecting the top 25 collaborators of Mark Lundstrom. A scholar is included among the top collaborators of Mark Lundstrom based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mark Lundstrom. Mark Lundstrom is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Zhang, Zhuocheng, Zehao Lin, Pai-Ying Liao, et al.. (2022). A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current. IEEE Electron Device Letters. 43(11). 1905–1908. 30 indexed citations

Lundstrom, Mark & Jesse Maassen. (2015). A Simple Boltzmann Transport Equation for Ballistic to Diffusive Transient Heat Transport. Purdue e-Pubs (Purdue University System). 23 indexed citations

Lundstrom, Mark. (2015). Drift-diffusion and computational electronics - still going strong after 40 years!. Zenodo (CERN European Organization for Nuclear Research). 1–3. 15 indexed citations

Luo, Zhe, Jesse Maassen, Yexin Deng, et al.. (2015). Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus. Nature Communications. 6(1). 8572–8572. 542 indexed citations breakdown →

Maassen, Jesse & Mark Lundstrom. (2014). Investigation on the thermoelectric performance of monolayer MoS<inf>2</inf>. 904–907. 2 indexed citations

Jeong, Changwook, Raseong Kim, & Mark Lundstrom. (2012). On the best bandstructure for thermoelectric performance: A Landauer Perspective. Purdue e-Pubs (Purdue University System). 40 indexed citations

Williams, J. R., Tony Low, Mark Lundstrom, & C. M. Marcus. (2011). Gate-controlled guiding of electrons in graphene. Nature Nanotechnology. 6(4). 222–225. 171 indexed citations

Gao, Yunfei, Tony Low, & Mark Lundstrom. (2006). Possibilities for V DD = 0.1V logic using carbon-based tunneling field effect transistors. Symposium on VLSI Technology. 180–181. 3 indexed citations

Klimeck, Gerhard, et al.. (2006). Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects. 37 indexed citations

10.

Javey, Ali, Jing Guo, Magnus Paulsson, et al.. (2004). High-Field Quasiballistic Transport in Short Carbon Nanotubes. Physical Review Letters. 92(10). 106804–106804. 447 indexed citations

11.

Ren, Zhibin, et al.. (2002). Simulating Quantum Transport in Nanoscale MOSFETs: Real vs. Mode Space Approaches. Applied Physics Letters. 20 indexed citations

12.

Javey, Ali, Hyoungsub Kim, Markus Brink, et al.. (2002). High-κ dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Materials. 1(4). 241–246. 782 indexed citations breakdown →

13.

Fortes, J.A.B., et al.. (1999). Statewide Enterprise Computing with the Purdue University Network-Computing Hubs.. International Conference on Enterprise Information Systems. 657–664. 1 indexed citations

14.

Alam, Muhammad A. & Mark Lundstrom. (1995). Computational studies of the physics of optoelectronic devices. Purdue e-Pubs (Purdue University System). 1 indexed citations

15.

Klausmeier-Brown, M. E., M. R. Melloch, & Mark Lundstrom. (1990). Electrical measurements of bandgap shrinkage in heavily dopedp-type GaAs. Journal of Electronic Materials. 19(1). 7–11. 5 indexed citations

16.

Lundstrom, Mark, et al.. (1987). Theoretical comparison of conventional and unconventional GaAs cell design. Photovoltaic Specialists Conference. 925. 5 indexed citations

17.

Kyono, C. S., et al.. (1987). Dark IV characterization of GaAs p/n heteroface cells. pvsp. 93–97. 2 indexed citations

18.

Lundstrom, Mark, et al.. (1985). GaAs concentrator cells - Design options and constraints. Photovoltaic Specialists Conference. 321–326. 2 indexed citations

19.

Lundstrom, Mark, R. J. Schwartz, & J.L. Gray. (1981). Modeling solar cells containing heavily doped regions. Photovoltaic Specialists Conference. 400–405. 2 indexed citations

20.

Schwartz, R. J. & Mark Lundstrom. (1980). Computer Modeling of High-Efficiency Solar Cells. 2169. 37. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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