Mengwei Si

7.2k total citations · 3 hit papers
173 papers, 5.8k citations indexed

About

Mengwei Si is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Mengwei Si has authored 173 papers receiving a total of 5.8k indexed citations (citations by other indexed papers that have themselves been cited), including 147 papers in Electrical and Electronic Engineering, 100 papers in Materials Chemistry and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Mengwei Si's work include Semiconductor materials and devices (98 papers), Ferroelectric and Negative Capacitance Devices (72 papers) and Advancements in Semiconductor Devices and Circuit Design (42 papers). Mengwei Si is often cited by papers focused on Semiconductor materials and devices (98 papers), Ferroelectric and Negative Capacitance Devices (72 papers) and Advancements in Semiconductor Devices and Circuit Design (42 papers). Mengwei Si collaborates with scholars based in United States, China and Taiwan. Mengwei Si's co-authors include Peide D. Ye, Gang Qiu, Muhammad A. Alam, Yuchen Du, Zehao Lin, Xiao Lyu, Hong Zhou, Haiyan Wang, Pai-Ying Liao and Adam Charnas and has published in prestigious journals such as Advanced Materials, Nature Communications and Nano Letters.

In The Last Decade

Mengwei Si

160 papers receiving 5.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Steep-slope hysteresis-free negative capacitance MoS2 transistors

2017 451 citations Mengwei Si, Kerry Maize et al. profile →
Ultra-wide bandgap semiconductor Ga2O3 power diodes

2022 443 citations Mengwei Si et al. Nature Communications profile →
Scaled indium oxide transistors fabricated using atomic layer deposition

2022 206 citations Mengwei Si, Zehao Lin et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Mengwei Si United States	37	4.2k	3.9k	1.1k	778	380	173	5.8k
Jianlu Wang China	43	4.2k 1.0×	4.7k 1.2×	1.0k 1.0×	1.3k 1.7×	316 0.8×	121	6.1k
Lili Yu China	25	2.8k 0.7×	4.8k 1.2×	640 0.6×	953 1.2×	706 1.9×	69	5.8k
Genquan Han China	36	4.1k 1.0×	1.7k 0.4×	873 0.8×	1.0k 1.3×	282 0.7×	356	5.0k
Xiaolong Chen China	26	1.7k 0.4×	2.6k 0.7×	391 0.4×	536 0.7×	176 0.5×	90	3.1k
Ruixia Wu China	27	1.6k 0.4×	2.5k 0.6×	357 0.3×	341 0.4×	268 0.7×	80	3.2k
Cedric Huyghebaert Belgium	36	3.2k 0.8×	2.9k 0.7×	397 0.4×	1.3k 1.6×	146 0.4×	138	4.8k
Iuliana Radu Belgium	40	3.2k 0.8×	2.7k 0.7×	513 0.5×	650 0.8×	123 0.3×	239	5.0k
Baoshun Zhang China	32	1.8k 0.4×	1.8k 0.5×	1.2k 1.2×	465 0.6×	726 1.9×	212	3.6k
Hui Xia China	20	1.6k 0.4×	1.9k 0.5×	336 0.3×	607 0.8×	148 0.4×	56	2.7k

Countries citing papers authored by Mengwei Si

Since Specialization

Citations

This map shows the geographic impact of Mengwei Si's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mengwei Si with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mengwei Si more than expected).

Fields of papers citing papers by Mengwei Si

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mengwei Si. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mengwei Si. The network helps show where Mengwei Si may publish in the future.

Co-authorship network of co-authors of Mengwei Si

This figure shows the co-authorship network connecting the top 25 collaborators of Mengwei Si. A scholar is included among the top collaborators of Mengwei Si based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mengwei Si. Mengwei Si is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chen, Danyang, et al.. (2025). Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor. IEEE Transactions on Electron Devices. 72(9). 4872–4877.

Wang, Ziheng, Kai Jiang, Yuan Li, et al.. (2025). In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility. IEEE Electron Device Letters. 46(3). 412–415. 1 indexed citations

Zhang, Shucheng, Qi Liu, Yu Li, et al.. (2025). Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 72(3). 1097–1103.

Chen, Danyang, Jiahui Zhang, Jingquan Liu, et al.. (2025). Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf0.5Zr0.5O2 films. Nature Communications. 16(1). 4232–4232. 3 indexed citations

Zhang, Chi, Yun Zhi Law, Meng Yu, et al.. (2024). Model tests of a stiffness-similar jack-up, Part 3: Transit condition and uncertainty analysis. Marine Structures. 96. 103624–103624.

Chen, Danyang, et al.. (2024). Can Interface Layer be Really Free for Hf_xZr_1-xO₂ Based Ferroelectric Field-Effect Transistors With Oxide Semiconductor Channel?. IEEE Electron Device Letters. 45(3). 368–371. 13 indexed citations

Chen, Danyang, et al.. (2024). A metastable temperature-strain phase diagram of HfxZr1−xO2 thin films based on synchrotron-based in situ 2D GIXRD investigation. Applied Physics Letters. 125(25). 1 indexed citations

Wang, Ziheng, et al.. (2024). The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization. IEEE Transactions on Electron Devices. 71(5). 3002–3008. 21 indexed citations

Wang, Ziheng, Wei Tang, Linrun Feng, et al.. (2024). CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration. IEEE Transactions on Electron Devices. 71(8). 4664–4669. 2 indexed citations

10.

Zhang, Chi, Meng Yu, Yun Zhi Law, et al.. (2023). Model tests of a stiffness-similar jack-up, Part 2: In-place and hull-in-water conditions. Marine Structures. 93. 103528–103528. 3 indexed citations

11.

Liao, Pai-Ying, Dongqi Zheng, Zhuocheng Zhang, et al.. (2023). Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs Toward Monolithic 3-D Integration. IEEE Transactions on Electron Devices. 70(4). 2052–2058. 16 indexed citations

12.

Noh, Jinhyun, Prabudhya Roy Chowdhury, Mengwei Si, et al.. (2022). Enhancement of Thermal Transfer From β-Ga₂O₃ Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer. IEEE Transactions on Electron Devices. 69(3). 1186–1190. 17 indexed citations

13.

Lu, Juanjuan, Nicholas A. Richter, Mengwei Si, et al.. (2022). ZnO–ferromagnetic metal vertically aligned nanocomposite thin films for magnetic, optical and acoustic metamaterials. Nanoscale Advances. 5(1). 247–254. 5 indexed citations

14.

Zheng, Dongqi, Mengwei Si, Sou-Chi Chang, et al.. (2022). Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions. Journal of Applied Physics. 132(5). 10 indexed citations

15.

Zhang, Zhuocheng, Zehao Lin, Pai-Ying Liao, et al.. (2022). A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current. IEEE Electron Device Letters. 43(11). 1905–1908. 30 indexed citations

16.

Zhang, Zhuocheng, Zehao Lin, Mengwei Si, et al.. (2022). Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility. Applied Physics Letters. 120(20). 9 indexed citations

17.

Si, Mengwei, Zehao Lin, Junkang Li, et al.. (2021). BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization. IEEE Transactions on Electron Devices. 68(7). 3195–3199. 26 indexed citations

18.

Zheng, Dongqi, et al.. (2021). Controlling Threshold Voltage of CMOS SOI Nanowire FETs With Sub-1 nm Dipole Layers Formed by Atomic Layer Deposition. IEEE Transactions on Electron Devices. 69(2). 851–856. 7 indexed citations

19.

Noh, Jinhyun, Hagyoul Bae, Junkang Li, et al.. (2021). First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment. IEEE Transactions on Electron Devices. 68(5). 2515–2521. 27 indexed citations

20.

Si, Mengwei, Zehao Lin, Jinhyun Noh, et al.. (2020). The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors. IEEE Journal of the Electron Devices Society. 8. 846–849. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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