Mengwei Si

7.2k citations

173 papers · 5.8k indexed · 3 hit papers · h-index 37

Materials Chemistry top 1%
- MXene and MAX Phase Materials 31
- ZnO doping and properties 29
- 2D Materials and Applications 22
Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices 98
- Ferroelectric and Negative Capacitance Devices 72
- Advancements in Semiconductor Devices and Circuit Design 42
- Advanced Memory and Neural Computing 33
- Thin-Film Transistor Technologies 32
Electronic, Optical and Magnetic Materials top 2%
Renewable Energy, Sustainability and the Environment top 5%
Biomedical Engineering top 5%

Co-authors: Peide D. Ye Gang Qiu Muhammad A. Alam Yuchen Du Zehao Lin Xiao Lyu Hong Zhou Haiyan Wang
Cited by: Materials Chemistry Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: IEEE Transactions on Electron Devices (31 papers)IEEE Electron Device Letters (18 papers)Applied Physics Letters (9 papers)
Partner nations: United States China Taiwan

In The Last Decade

Mengwei Si

160 papers receiving 5.7k citations

Hit Papers

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Peers

Countries citing papers authored by Mengwei Si

Since Specialization

Citations

This map shows the geographic impact of Mengwei Si's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mengwei Si with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mengwei Si more than expected).

Fields of papers citing papers by Mengwei Si

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mengwei Si. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mengwei Si. The network helps show where Mengwei Si may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Mengwei Si, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mengwei Si Line = papers co-authored together Mengwei Si links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor IEEE Transactions on Electron Devices ·Maria E. Biocca,Danyang Chen,Mayra Alejandra Neira Vera,Fabian Radner,Mariel Brítez,Jingquan Liu,Mengwei Si,Xiuyan Li	2025	0
2	In₂O₃–ZnO Superlattice Transistors by Atomic Layer Deposition With High Field-Effect Mobility IEEE Electron Device Letters ·Ziheng Wang,Viola Paloma Zangirolami,Kai Jiang,Yuan Li,Rashi Keshab Raj Regmi,Mingle Shen,Mizuki Kobayashi,Vagramian Za,Roel Custers,Fajar Ridwansyah,Mayra Alejandra Neira Vera,Xiuyan Li,Xueli Ma,Guilei Wang,Chao Zhao,А. А. Сейтмаганбетова,Hailab Fekadu,Mengwei Si	2025	1
3	Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitors IEEE Transactions on Electron Devices ·Morgan W. Conrady,Shucheng Zhang,Qi Liu,Yu Li,Nancy De Witt,Xumeng Zhang,Yingfen Wei,Mengwei Si,H. W. Jiang	2025	0
4	Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf0.5Zr0.5O2 films Nature Communications ·Alix Schultz,David M. Moerdyk,HEZEKIAH OLAWALE T.,Fabian Radner,Danyang Chen,Jiahui Zhang,Jingquan Liu,Mengwei Si,Shenyang Deng,Wenwu Li,Junhao Chu,Yanwei Cao,Christophe Mayolini,Xiuyan Li	2025	3
5	Model tests of a stiffness-similar jack-up, Part 3: Transit condition and uncertainty analysis Marine Structures ·Chi Zhang,Lily X. Zelaya-Molina,Qazi Arbab Ahmed,Ahlam Dhahir Mohsin Al-Shamarti,Yun Zhi Law,Meng Yu,Heru Ependi,Miaomiao Cai,Bernard Voon Ee How,H. Santo,Vijayakumar Mahalakshmi,Mengwei Si	2024	0
6	Can Interface Layer be Really Free for Hf_xZr_1-xO₂ Based Ferroelectric Field-Effect Transistors With Oxide Semiconductor Channel? IEEE Electron Device Letters ·Mayra Alejandra Neira Vera,Danyang Chen,Fabian Radner,Alix Schultz,Maria E. Biocca,Jeselin Andono,Jingquan Liu,Gang Liu,Mengwei Si,Xiuyan Li	2024	13
7	A metastable temperature-strain phase diagram of HfxZr1−xO2 thin films based on synchrotron-based in situ 2D GIXRD investigation Applied Physics Letters ·Mayra Alejandra Neira Vera,K. Kaarthiga,Danyang Chen,Alix Schultz,Jingquan Liu,Mengwei Si,Xiuyan Li	2024	1
8	The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization IEEE Transactions on Electron Devices ·Roel Custers,I. Funnel,Viola Paloma Zangirolami,Augusto Rojas-Bourillon,Ziheng Wang,Hailab Fekadu,Yuan Li,Mizuki Kobayashi,А. А. Сейтмаганбетова,Xiuyan Li,Ying Wu,Masahiro Yokohata,Mengwei Si	2024	21
9	CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration IEEE Transactions on Electron Devices ·Ziheng Wang,Fajar Ridwansyah,Roel Custers,Viola Paloma Zangirolami,Wei Tang,Linrun Feng,Zhe Liu,Xuefei Li,Xiaojun Guo,Mengwei Si	2024	2
10	Model tests of a stiffness-similar jack-up, Part 2: In-place and hull-in-water conditions Marine Structures ·Chi Zhang,Lily X. Zelaya-Molina,Meng Yu,Ahlam Dhahir Mohsin Al-Shamarti,Yun Zhi Law,Heru Ependi,Qazi Arbab Ahmed,Miaomiao Cai,Bernard Voon Ee How,H. Santo,Vijayakumar Mahalakshmi,Mengwei Si	2023	3
11	Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs Toward Monolithic 3-D Integration IEEE Transactions on Electron Devices ·Pai-Ying Liao,Dongqi Zheng,凌德芳,Zhuocheng Zhang,Mengwei Si,Jie Zhang,M Serrenti,Tatyana I. Feygelson,Marko J. Tadjer,Ali Shakouri,Peide D. Ye	2023	16
12	Enhancement of Thermal Transfer From β-Ga₂O₃ Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer IEEE Transactions on Electron Devices ·Jinhyun Noh,Prabudhya Roy Chowdhury,狄梦洁,凌德芳,Mengwei Si,Adam Charnas,Shouyuan Huang,Kerry Maize,Ali Shakouri,Xianfan Xu,Xiulin Ruan,Peide D. Ye	2022	17
13	ZnO–ferromagnetic metal vertically aligned nanocomposite thin films for magnetic, optical and acoustic metamaterials Nanoscale Advances ·脩治内藤,Pulak Sharma,Juanjuan Lu,Rubens Vieira,Nicholas A. Richter,Mengwei Si,岡村美好,Peide D. Ye,Raktim Sarma,Aleem Siddiqui,Jijie Huang,X. Zhang,Haiyan Wang	2022	5
14	Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions Journal of Applied Physics ·Dongqi Zheng,Mengwei Si,Sou-Chi Chang,Nazila Haratipour,Zhizhong Chen,Adam Charnas,Shouyuan Huang,Kang Wang,Letian Dou,Xianfan Xu,Uygar E. Avci,Peide D. Ye	2022	10
15	A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current IEEE Electron Device Letters ·Zhuocheng Zhang,Zehao Lin,Pai-Ying Liao,A.C. Ross,Hongyi Dou,Zhongxia Shang,Adam Charnas,Mengwei Si,凌德芳,Ali Shakouri,Haiyan Wang,Mark Lundstrom,Jesse Maassen,Peide D. Ye	2022	30
16	Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility Applied Physics Letters ·Zhuocheng Zhang,Zehao Lin,Mengwei Si,Di Zhang,Hongyi Dou,Zhizhong Chen,Adam Charnas,Haiyan Wang,Peide D. Ye	2022	9
17	BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization IEEE Transactions on Electron Devices ·Mengwei Si,Felipe Gil-Castiñeira,Zehao Lin,Shaohan Feng,Junkang Li,Jinhyun Noh,凌德芳,Chang Niu,Xiao Lyu,Dongqi Zheng,Kerry Maize,Ali Shakouri,Suman Datta,Rakesh Agrawal,Peide D. Ye	2021	26
18	Controlling Threshold Voltage of CMOS SOI Nanowire FETs With Sub-1 nm Dipole Layers Formed by Atomic Layer Deposition IEEE Transactions on Electron Devices ·Dongqi Zheng,Wonil Chung,Zhizhong Chen,Mengwei Si,อภิชน จีนเสวก,Peide D. Ye	2021	7
19	First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment IEEE Transactions on Electron Devices ·Jinhyun Noh,Hagyoul Bae,Junkang Li,Yandong Luo,Yiming Qu,Tae Joon Park,Mengwei Si,Xuegang Chen,Adam Charnas,Wonil Chung,Xiaochen Peng,Shriram Ramanathan,Shimeng Yu,Peide D. Ye	2021	27
20	The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors IEEE Journal of the Electron Devices Society ·Mengwei Si,Zehao Lin,Jinhyun Noh,Junkang Li,Wonil Chung,Peide D. Ye	2020	17

About Mengwei Si

Mengwei Si is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Polymers and Plastics and Biomedical Engineering, having authored 173 papers that have together received 5.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (98 papers), Ferroelectric and Negative Capacitance Devices (72 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Advanced Memory and Neural Computing (33 papers), Thin-Film Transistor Technologies (32 papers), MXene and MAX Phase Materials (31 papers), ZnO doping and properties (29 papers) and 2D Materials and Applications (22 papers). The work is most often cited by research in Materials Chemistry (3.9k citations), Electrical and Electronic Engineering (4.2k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Renewable Energy, Sustainability and the Environment (380 citations) and Biomedical Engineering (778 citations). Mengwei Si has collaborated with scholars based in United States, China and Taiwan. Frequent co-authors include Peide D. Ye, Gang Qiu, Muhammad A. Alam, Yuchen Du, Zehao Lin, Xiao Lyu, Hong Zhou, Haiyan Wang, Pai-Ying Liao and Adam Charnas. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, ACS Nano and Nano Letters.

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