A. Fontserè

509 total citations
25 papers, 415 citations indexed

About

A. Fontserè is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Fontserè has authored 25 papers receiving a total of 415 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Fontserè's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (17 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). A. Fontserè is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (17 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). A. Fontserè collaborates with scholars based in Spain, France and United Kingdom. A. Fontserè's co-authors include Amador Pérez‐Tomás, Marcel Placidi, Y. Cordier, N. Baron, J. C. Moreno, Sébastien Chenot, Peter Michael Gammon, Michael R. Jennings, Jordi Llobet and Philippe Godignon and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Fontserè

25 papers receiving 405 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Fontserè Spain 13 305 289 143 92 86 25 415
G. Zhao United States 13 251 0.8× 268 0.9× 189 1.3× 151 1.6× 209 2.4× 30 453
V. M. Boĭko Russia 14 256 0.8× 375 1.3× 265 1.9× 105 1.1× 106 1.2× 27 441
N. M. Shmidt Russia 12 232 0.8× 327 1.1× 187 1.3× 150 1.6× 92 1.1× 53 431
Manoj Kesaria United Kingdom 12 214 0.7× 183 0.6× 149 1.0× 167 1.8× 194 2.3× 39 430
Ho Ki Kwon South Korea 15 314 1.0× 407 1.4× 189 1.3× 205 2.2× 202 2.3× 33 579
Kazuto Ikeda Japan 12 196 0.6× 180 0.6× 112 0.8× 115 1.3× 136 1.6× 59 404
Chinkyo Kim South Korea 10 120 0.4× 271 0.9× 152 1.1× 89 1.0× 255 3.0× 49 408
J.-L. Reverchon France 10 161 0.5× 132 0.5× 157 1.1× 113 1.2× 135 1.6× 34 345
E. V. Konenkova Russia 10 198 0.6× 187 0.6× 68 0.5× 139 1.5× 99 1.2× 53 355

Countries citing papers authored by A. Fontserè

Since Specialization
Citations

This map shows the geographic impact of A. Fontserè's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Fontserè with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Fontserè more than expected).

Fields of papers citing papers by A. Fontserè

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Fontserè. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Fontserè. The network helps show where A. Fontserè may publish in the future.

Co-authorship network of co-authors of A. Fontserè

This figure shows the co-authorship network connecting the top 25 collaborators of A. Fontserè. A scholar is included among the top collaborators of A. Fontserè based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Fontserè. A. Fontserè is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pedreira, P. R. B., et al.. (2019). Deflectometry encoding the measured angle in a time-dependent intensity signal. Review of Scientific Instruments. 90(2). 21707–21707. 1 indexed citations
2.
Pellegrin, E., Virginia Pérez‐Dieste, Carlos Escudero, et al.. (2019). Water/methanol solutions characterized by liquid μ-jet XPS and DFT—The methanol hydration case. Journal of Molecular Liquids. 300. 112258–112258. 11 indexed citations
3.
Rafı́, J.M., G. Pellegrini, Philippe Godignon, et al.. (2018). Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects. Journal of Instrumentation. 13(1). C01045–C01045. 16 indexed citations
4.
Rafı́, J.M., G. Pellegrini, D. Quirion, et al.. (2017). 10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects. Journal of Instrumentation. 12(1). C01004–C01004. 9 indexed citations
5.
Foerster, Michael, et al.. (2016). Custom sample environments at the ALBA XPEEM. Ultramicroscopy. 171. 63–69. 40 indexed citations
6.
Pérez‐Tomás, Amador, Gustau Catalán, A. Fontserè, et al.. (2015). Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology. 26(11). 115203–115203. 11 indexed citations
7.
Pérez‐Tomás, Amador, A. Fontserè, Marcel Placidi, Michael R. Jennings, & Peter Michael Gammon. (2013). Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC. Modelling and Simulation in Materials Science and Engineering. 21(3). 35004–35004. 12 indexed citations
8.
Pérez‐Tomás, Amador, A. Fontserè, Jordi Llobet, et al.. (2013). Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates. Journal of Applied Physics. 113(17). 58 indexed citations
9.
Fontserè, A., Amador Pérez‐Tomás, Philippe Godignon, et al.. (2012). Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. Microelectronics Reliability. 52(9-10). 2220–2223. 11 indexed citations
10.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2012). Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN. ECS Solid State Letters. 2(1). P4–P7. 12 indexed citations
11.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2012). Reverse current thermal activation of AlGaN/GaN HEMTs on Si(111). Microelectronics Reliability. 52(11). 2547–2550. 3 indexed citations
12.
Pérez‐Tomás, Amador, A. Fontserè, Marcel Placidi, et al.. (2012). Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance. Semiconductor Science and Technology. 27(12). 125010–125010. 21 indexed citations
13.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2012). Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology. 23(39). 395204–395204. 12 indexed citations
14.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2011). GaN Ohmic contact resistance vs temperature. 1–2. 3 indexed citations
15.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2011). Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN. Applied Physics Letters. 99(21). 46 indexed citations
16.
Pérez‐Tomás, Amador, Marcel Placidi, A. Fontserè, Peter Michael Gammon, & Michael R. Jennings. (2011). Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. Microelectronics Reliability. 51(8). 1325–1329. 7 indexed citations
17.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2011). Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET. Microelectronic Engineering. 88(10). 3140–3144. 25 indexed citations
18.
Pérez‐Tomás, Amador, A. Fontserè, Marcel Placidi, et al.. (2011). Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T. Materials science forum. 679-680. 816–819. 3 indexed citations
19.
Placidi, Marcel, A. Constant, A. Fontserè, et al.. (2010). Deposited Thin SiO[sub 2] for Gate Oxide on n-Type and p-Type GaN. Journal of The Electrochemical Society. 157(11). H1008–H1008. 22 indexed citations
20.
Pérez‐Tomás, Amador & A. Fontserè. (2010). AlGaN/GaN hybrid MOS-HEMT analytical mobility model. Solid-State Electronics. 56(1). 201–206. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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