Weikun Ge

10.4k total citations · 4 hit papers
287 papers, 8.7k citations indexed

About

Weikun Ge is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Weikun Ge has authored 287 papers receiving a total of 8.7k indexed citations (citations by other indexed papers that have themselves been cited), including 148 papers in Electrical and Electronic Engineering, 144 papers in Condensed Matter Physics and 126 papers in Materials Chemistry. Recurrent topics in Weikun Ge's work include GaN-based semiconductor devices and materials (136 papers), Semiconductor Quantum Structures and Devices (96 papers) and Ga2O3 and related materials (75 papers). Weikun Ge is often cited by papers focused on GaN-based semiconductor devices and materials (136 papers), Semiconductor Quantum Structures and Devices (96 papers) and Ga2O3 and related materials (75 papers). Weikun Ge collaborates with scholars based in China, Hong Kong and United States. Weikun Ge's co-authors include Jiannong Wang, Lu Ding, Shihe Yang, Y. H. Leung, Aleksandra B. Djurišić, K. H. Tam, Chunlei Yang, Bo Shen, Lin Guo and Xinqiang Wang and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nature Communications.

In The Last Decade

Weikun Ge

273 papers receiving 8.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Defects in ZnO Nanorods Prepared by a Hydrothermal Method

2006 686 citations Weikun Ge et al. profile →
Photocatalytic activity of WOx-TiO2 under visible light irradiation

2001 637 citations Weikun Ge et al. profile →
Defect emissions in ZnO nanostructures

2007 633 citations Weikun Ge et al. profile →
Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength

2006 520 citations Weikun Ge et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Weikun Ge China	36	5.7k	3.9k	2.3k	1.7k	1.6k	287	8.7k
Xin-Gao Gong China	50	6.3k 1.1×	3.3k 0.8×	1.9k 0.8×	1.1k 0.7×	1.2k 0.7×	184	8.7k
Richard G. Hennig United States	59	10.3k 1.8×	4.5k 1.2×	1.8k 0.8×	847 0.5×	2.1k 1.3×	196	13.0k
Wenbo Mi China	43	7.6k 1.3×	3.5k 0.9×	3.2k 1.4×	950 0.6×	2.9k 1.8×	327	10.5k
Christopher M. Rouleau United States	53	8.4k 1.5×	5.0k 1.3×	1.9k 0.8×	575 0.3×	1.6k 1.0×	181	10.8k
Erjun Kan China	50	7.3k 1.3×	3.8k 1.0×	2.6k 1.1×	983 0.6×	1.8k 1.1×	269	9.8k
Juarez L. F. Da Silva Brazil	48	7.2k 1.3×	3.1k 0.8×	1.6k 0.7×	708 0.4×	1.4k 0.9×	255	8.9k
Tadaaki Nagao Japan	58	4.5k 0.8×	2.7k 0.7×	2.2k 1.0×	1.2k 0.7×	2.4k 1.5×	283	11.0k
Yu Xie China	45	9.6k 1.7×	5.1k 1.3×	2.1k 0.9×	954 0.6×	2.3k 1.4×	122	12.1k
Ji Feng China	46	8.1k 1.4×	4.2k 1.1×	2.1k 0.9×	910 0.5×	566 0.3×	153	10.4k
Jeunghee Park South Korea	55	6.5k 1.1×	4.2k 1.1×	2.0k 0.9×	535 0.3×	2.5k 1.6×	195	9.4k

Countries citing papers authored by Weikun Ge

Since Specialization

Citations

This map shows the geographic impact of Weikun Ge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Weikun Ge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Weikun Ge more than expected).

Fields of papers citing papers by Weikun Ge

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Weikun Ge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Weikun Ge. The network helps show where Weikun Ge may publish in the future.

Co-authorship network of co-authors of Weikun Ge

This figure shows the co-authorship network connecting the top 25 collaborators of Weikun Ge. A scholar is included among the top collaborators of Weikun Ge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Weikun Ge. Weikun Ge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Wang, Jiaming, Jing Lang, Fujun Xu, et al.. (2025). Unveiling and eliminating the parasitic hole loss in AlGaN-based deep-ultraviolet light-emitting diodes. Applied Physics Letters. 126(21).

Wang, Jiaming, Fujun Xu, Lisheng Zhang, et al.. (2025). Stacking III‐Nitride Ultraviolet‐B Light Emitters with High Efficiency via a Lattice‐Engineered Architecture. Advanced Materials. 37(42). e08380–e08380.

Hu, Yuqing, Ning Tang, Junxi Duan, et al.. (2025). Indirect Band Nature of Atomically Thin Hexagonal Boron Nitride Identified by Resonant Excitation in the Deep Ultraviolet Regime. Physical Review Letters. 135(4). 46903–46903.

Yang, Xuelin, Bin Chen, Zhenghao Chen, et al.. (2025). Atomistic Understanding of Dislocation Climb in Nitride Semiconductors: Role of Asymmetric Jogs. Physical Review Letters. 134(5). 56102–56102. 1 indexed citations

Lang, Jing, Fujun Xu, Jiaming Wang, et al.. (2025). Improving electrical properties of metal–semiconductor contact on Al-rich n-AlGaN by multi-step annealing. Applied Physics Letters. 127(17).

Wang, Jiaming, Fujun Xu, Lisheng Zhang, et al.. (2024). Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping. Applied Physics Letters. 124(15). 5 indexed citations

Chen, Ji, Jiaming Wang, Fujun Xu, et al.. (2024). Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes. Applied Physics Letters. 125(25). 2 indexed citations

Lang, Jing, Fujun Xu, Jiaming Wang, et al.. (2024). The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes. Applied Physics Letters. 125(1). 2 indexed citations

Xu, Fujun, Jing Lang, Jiaming Wang, et al.. (2024). Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN. Applied Physics Letters. 124(23). 1 indexed citations

10.

Wang, Jiaming, Fujun Xu, Lisheng Zhang, et al.. (2024). Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer. Applied Physics Letters. 124(6). 5 indexed citations

11.

Yang, Xuelin, Shan Wu, Ning Tang, et al.. (2023). Mechanism for self-compensation in heavily carbon doped GaN. AIP Advances. 13(3). 1 indexed citations

12.

Jiang, Jiayang, Weiting Xu, Shengxue Yang, et al.. (2023). Polarization-Resolved Near-Infrared PdSe₂ p-i-n Homojunction Photodetector. Nano Letters. 23(20). 9522–9528. 34 indexed citations

13.

Yang, Xuelin, Wensheng Yan, Zeming Qi, et al.. (2022). Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory. Applied Physics Letters. 121(25).

14.

Feng, Yuxia, Huarui Sun, Xuelin Yang, et al.. (2021). High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer. Applied Physics Letters. 118(5). 19 indexed citations

15.

Tang, Ning, et al.. (2021). Spin dynamics in GaN/Al0.1Ga0.9N quantum well with complex band edge structure. Applied Physics Letters. 118(25). 4 indexed citations

16.

Tang, Ning, Chi Fang, Caihua Wan, et al.. (2020). Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors. RSC Advances. 10(21). 12547–12553. 6 indexed citations

17.

Xie, Nan, Fujun Xu, Na Zhang, et al.. (2019). Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate. Japanese Journal of Applied Physics. 58(10). 100912–100912. 13 indexed citations

18.

Xu, Yue, Zhiqiao Li, Xuelin Yang, et al.. (2019). Migration of carbon from Ga sites to N sites in GaN: a combined PAS and hybrid DFT study. Japanese Journal of Applied Physics. 58(9). 90901–90901. 7 indexed citations

19.

Song, Chunyan, Xuelin Yang, Jun Tang, et al.. (2019). Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs. Applied Sciences. 9(11). 2373–2373. 6 indexed citations

20.

Li, Guanghai, Wen Zhang, Zuoming Zhu, et al.. (1999). Pressure Behavior of Deep Centers in ZnSxTe1?x Alloys. physica status solidi (b). 211(1). 163–169. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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