Mingmin Huang

503 total citations
50 papers, 362 citations indexed

About

Mingmin Huang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Mingmin Huang has authored 50 papers receiving a total of 362 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in Mingmin Huang's work include Silicon Carbide Semiconductor Technologies (40 papers), Semiconductor materials and devices (24 papers) and Semiconductor materials and interfaces (14 papers). Mingmin Huang is often cited by papers focused on Silicon Carbide Semiconductor Technologies (40 papers), Semiconductor materials and devices (24 papers) and Semiconductor materials and interfaces (14 papers). Mingmin Huang collaborates with scholars based in China. Mingmin Huang's co-authors include Xingbi Chen, Min Gong, Zhimei Yang, Yao Ma, Bo Gao, Li Lai, Dunwen Zuo, Xiangfeng Li, Kangmin Chen and Jing Yan and has published in prestigious journals such as Applied Physics Letters, Journal of Alloys and Compounds and IEEE Transactions on Electron Devices.

In The Last Decade

Mingmin Huang

42 papers receiving 345 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mingmin Huang China 10 273 60 60 48 45 50 362
Chengzhan Li China 12 399 1.5× 60 1.0× 78 1.3× 38 0.8× 20 0.4× 71 490
Maxime Berthou Spain 10 398 1.5× 73 1.2× 45 0.8× 25 0.5× 18 0.4× 32 412
Andrew Greene United States 9 161 0.6× 46 0.8× 53 0.9× 48 1.0× 34 0.8× 33 234
J. Neil Merrett United States 10 245 0.9× 52 0.9× 20 0.3× 79 1.6× 11 0.2× 29 312
C. Key Chung Taiwan 11 278 1.0× 19 0.3× 177 3.0× 113 2.4× 45 1.0× 22 380
Jong Tae Park South Korea 14 406 1.5× 28 0.5× 69 1.1× 178 3.7× 24 0.5× 69 515
Nathan Stoddard United States 8 303 1.1× 96 1.6× 20 0.3× 161 3.4× 15 0.3× 27 349
M. Petras United States 10 206 0.8× 61 1.0× 29 0.5× 71 1.5× 47 1.0× 23 356
Olga V. Emelyanova Russia 9 105 0.4× 88 1.5× 42 0.7× 101 2.1× 13 0.3× 23 292
Matthias Wietstruck Germany 11 419 1.5× 46 0.8× 28 0.5× 89 1.9× 31 0.7× 95 478

Countries citing papers authored by Mingmin Huang

Since Specialization
Citations

This map shows the geographic impact of Mingmin Huang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mingmin Huang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mingmin Huang more than expected).

Fields of papers citing papers by Mingmin Huang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mingmin Huang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mingmin Huang. The network helps show where Mingmin Huang may publish in the future.

Co-authorship network of co-authors of Mingmin Huang

This figure shows the co-authorship network connecting the top 25 collaborators of Mingmin Huang. A scholar is included among the top collaborators of Mingmin Huang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mingmin Huang. Mingmin Huang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Huang, Mingmin, et al.. (2025). Study on False Turn-On in IGBT With Floating p-Well and Comparing With Improved Structures. IEEE Transactions on Electron Devices. 72(3). 1264–1269.
3.
4.
Tan, Huan, Yumeng Yang, Zhimei Yang, et al.. (2025). Effects of Ge ion irradiation on dielectric properties of Si-based PiN diodes. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 563. 165692–165692.
5.
Li, Yun, et al.. (2024). Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 550. 165319–165319. 4 indexed citations
6.
Li, Yun, et al.. (2024). Enhanced Performance of Vertical β-Ga₂O₃ Schottky Barrier Diodes Through 212-MeV Low-Fluence Ge Ion Irradiation. IEEE Transactions on Electron Devices. 71(12). 7366–7371. 4 indexed citations
7.
Huang, Mingmin, et al.. (2024). A Snapback-Free and High-Performance Trench Gate Reverse-Conducting SOI-LIGBT With Self-Adaptive nMOS. IEEE Transactions on Electron Devices. 71(4). 2517–2523. 1 indexed citations
8.
Ma, Yao, Mingmin Huang, Sijie Zhang, et al.. (2024). Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 549. 165288–165288. 4 indexed citations
9.
Wang, Jingqi, Tianyu Chen, Yao Ma, et al.. (2024). Annealing influence on stoichiometry and band alignment of 4H-SiC/SiO2 interface evaluated by x-ray photoelectron spectroscopy. Semiconductor Science and Technology. 39(11). 115007–115007. 1 indexed citations
10.
Huang, Mingmin, et al.. (2024). Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes. IEEE Transactions on Nuclear Science. 71(10). 2252–2259. 2 indexed citations
11.
Huang, Mingmin, et al.. (2023). Considerations for SiC super junction MOSFET: On-resistance, gate structure, and oxide shield. Microelectronics Journal. 137. 105823–105823. 6 indexed citations
12.
Huang, Mingmin, Rui Li, Zhimei Yang, et al.. (2021). A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery. IEEE Transactions on Electron Devices. 68(5). 2401–2407. 17 indexed citations
13.
Hu, Min, Mingmin Huang, Rui Li, et al.. (2021). Semi-superjunction IGBT with a relatively high-resistance p-top region for low on-state and turn-off losses. Superlattices and Microstructures. 158. 107025–107025. 3 indexed citations
14.
Li, Rui, Mingmin Huang, Min Hu, et al.. (2021). Superjunction MOSFET with a trench contact on partly relatively lightly doped P-pillar for excellent reverse recovery. Semiconductor Science and Technology. 36(10). 105002–105002.
15.
Huang, Mingmin, Zhimei Yang, Shaomin Wang, et al.. (2020). Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 478. 5–10. 5 indexed citations
16.
Huang, Mingmin, et al.. (2020). Snapback‐free reverse conducting IGBT with p‐float and n‐ring surrounding trench‐collector. Electronics Letters. 56(24). 1337–1340. 1 indexed citations
17.
Huang, Mingmin, et al.. (2019). Snapback‐free reverse conducting IGBT with p‐poly trench‐collectors. Electronics Letters. 56(3). 153–155. 5 indexed citations
18.
Huang, Mingmin, et al.. (2019). Low‐loss reverse blocking IGBT with PNM structure and trench collectors. Electronics Letters. 55(6). 350–351. 4 indexed citations
19.
Li, Rui, Mingmin Huang, Zhimei Yang, Yao Ma, & Min Gong. (2019). Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars. Electronics Letters. 55(25). 1353–1355. 6 indexed citations
20.
Huang, Mingmin, Bo Gao, Zhimei Yang, Li Lai, & Min Gong. (2018). A Carrier-Storage-Enhanced Superjunction IGBT With Ultralow Loss and On-State Voltage. IEEE Electron Device Letters. 39(2). 264–267. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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