Zhijian Yang
- Electrical and Electronic Engineering top 10%
- Materials Chemistry
- Condensed Matter Physics top 5%
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Topics
- GaN-based semiconductor devices and materials (32 papers)Ga2O3 and related materials (17 papers)ZnO doping and properties (16 papers)
- Partner nations
- ChinaUnited StatesTaiwan
In The Last Decade
Zhijian Yang
55 papers receiving 646 citations
Peers
Comparison fields: 5 of 43
- Electrical and Electronic Engineering 357
- Materials Chemistry 336
- Condensed Matter Physics 243
- Electronic, Optical and Magnetic Materials 170
- Atomic and Molecular Physics, and Optics 152
Countries citing papers authored by Zhijian Yang
This map shows the geographic impact of Zhijian Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhijian Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhijian Yang more than expected).
Fields of papers citing papers by Zhijian Yang
This network shows the impact of papers produced by Zhijian Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhijian Yang. The network helps show where Zhijian Yang may publish in the future.
Co-authorship network of co-authors of Zhijian Yang
This figure shows the co-authorship network connecting the top 25 collaborators of Zhijian Yang. A scholar is included among the top collaborators of Zhijian Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhijian Yang. Zhijian Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 1 | |
| 2 | 8 | |
| 3 | 3 | |
| 4 | 14 | |
| 5 | 20 | |
| 6 | 2 | |
| 7 | 12 | |
| 8 | 7 | |
| 9 | 6 | |
| 10 | 7 | |
| 11 | 22 | |
| 12 | 23 | |
| 13 | 6 | |
| 14 | 5 | |
| 15 | Etch-pits of GaN films with different etching methods | 1 |
| 16 | 2 | |
| 17 | Sige HBT performance and reliability trends through fT of 350GHz | 5 |
| 18 | 7 | |
| 19 | Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics | 1 |
| 20 | 2 |
About Zhijian Yang
Zhijian Yang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Radiation, having authored 56 papers that have together received 671 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (32 papers), Ga2O3 and related materials (17 papers) and ZnO doping and properties (16 papers). The work is most often cited by research in Condensed Matter Physics (243 citations), Electronic, Optical and Magnetic Materials (170 citations) and Radiation (71 citations). Zhijian Yang has collaborated with scholars based in China, United States and Taiwan. Frequent co-authors include Guoyi Zhang, Tongjun Yu, F Guarin, G. Freeman, Qiushui Chen, Jae-Sung Rieh, Huanghao Yang, Xiangyu Ou, Zhongzhu Hong and Yu He. Their work appears in journals such as Advanced Materials, Angewandte Chemie International Edition and Applied Physics Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.