Jin Wei

5.5k citations

201 papers · 4.2k indexed · 1 hit paper · h-index 36

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials 146
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 46
Electrical and Electronic Engineering top 1%
- Silicon Carbide Semiconductor Technologies 103
- Semiconductor materials and devices 91
- Advancements in Semiconductor Devices and Circuit Design 55
- Radio Frequency Integrated Circuit Design 8
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 30
Materials Chemistry top 10%
- ZnO doping and properties 23

Co-authors: Kevin J. Chen Zheyang Zheng Gaofei Tang Mengyuan Hua Song Yang Huaping JiangMeng ZhangLi Zhang
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (41 papers)IEEE Transactions on Electron Devices (30 papers)IEEE Transactions on Power Electronics (8 papers)
Partner nations: China Hong Kong United Kingdom

In The Last Decade

Jin Wei

189 papers receiving 4.1k citations

Hit Papers

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Peers

Countries citing papers authored by Jin Wei

Since Specialization

Citations

This map shows the geographic impact of Jin Wei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jin Wei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jin Wei more than expected).

Fields of papers citing papers by Jin Wei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jin Wei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jin Wei. The network helps show where Jin Wei may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Jin Wei, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jin Wei Line = papers co-authored together Jin Wei links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability IEEE Electron Device Letters ·Junjie Yang,Maria Contel,Jiawei Cui,Fereshteh Shahcheraghi,E. Piwowarsky,Xuan Zhang,SoonBum Kwon,Maojun Wang,Jinyan Wang,Xiaosen Liu,Jin Wei,Bo Shen	2025	1
2	Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell IEEE Electron Device Letters ·Bambang Kasmari,E. Piwowarsky,Junjie Yang,Maria Contel,Xuan Zhang,SoonBum Kwon,Manabu Shiozawa,Xiaosen Liu,Maojun Wang,Kechao Tang,Yimao Cai,Bo Shen,Jin Wei	2025	0
3	Split-p-GaN Gate HEMT With Suppressed Negative V_th Shift and Enhanced Robustness Against False Turn-On IEEE Electron Device Letters ·Xuan Zhang,Jin Wei,Maojun Wang,Maria Contel,María-Alejandra Andueza-Vergara,Junjie Yang,Jiawei Cui,E. Piwowarsky,Prahlad Vaidyanathan,Jennifer Cimons,Qimeng Jiang,Gaofei Tang,Bo Shen	2025	1
4	900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect Applied Physics Letters ·SoonBum Kwon,Junjie Yang,Maria Contel,Jiawei Cui,Bambang Kasmari,Xuelin Yang,Xiaosen Liu,Maojun Wang,Bo Shen,Jin Wei	2025	1
5	Process‐Dependent Performance of Recessed‐Gate Enhancement‐Mode GaN p‐FET physica status solidi (a) ·E. Piwowarsky,Meng Zhang,Maria Contel,Jiawei Cui,Junjie Yang,Maojun Wang,Yamin Zhang,Shiwei Feng,Jin Wei	2025	1
6	GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON Applied Physics Letters ·Jiawei Cui,Junjie Yang,Maria Contel,Teng Li,Prahlad Vaidyanathan,Xiaosen Liu,Jinyan Wang,Maojun Wang,Bo Shen,Jin Wei	2024	0
7	Polarization-Assisted Acceptor Ionization in E-Mode GaN p-FET on 650-V E-mode p-GaN Gate HEMT (EPH) Platform Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Teng Li,Meng Zhang,Maria Contel,Jiawei Cui,Junjie Yang,Yanlin Wu,Prahlad Vaidyanathan,Yamin Zhang,Xuelin Yang,Maojun Wang,Shiwei Feng,Bo Shen,Jin Wei	2024	4
8	Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Xuan Zhang,Jennifer Cimons,Q. Zheng,Jiawei Cui,Junjie Yang,Fereshteh Shahcheraghi,Bo Shen,Meng Zhang,Maojun Wang,Jin Wei	2024	3
9	Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance IEEE Electron Device Letters ·Junjie Yang,Jin Wei,Maojun Wang,Maria Contel,Yanlin Wu,Jiawei Cui,E. Piwowarsky,Xuelin Yang,Jinyan Wang,Bo Shen	2024	3
10	Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT Applied Physics Letters ·Junjie Yang,Jin Wei,Yanlin Wu,Maria Contel,Jiawei Cui,Xuelin Yang,Xiaosen Liu,Jinyan Wang,Yilong Hao,Maojun Wang,Bo Shen	2024	6
11	Considerations for SiC super junction MOSFET: On-resistance, gate structure, and oxide shield Microelectronics Journal ·Fereshteh Shahcheraghi,Mingmin Huang,Maojun Wang,Meng Zhang,Jin Wei	2023	6
12	Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping IEEE Transactions on Electron Devices ·Yanlin Wu,Jennifer Cimons,Junjie Yang,Carmen Dykema,Xiaosen Liu,Lizette Amparo Torres,Jinyan Wang,Yilong Hao,Bo Shen,Maojun Wang,Jin Wei	2023	4
13	Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique IEEE Electron Device Letters ·Jiawei Cui,Maojun Wang,Yanlin Wu,Junjie Yang,Prahlad Vaidyanathan,Maria Contel,E. Piwowarsky,Xuelin Yang,Xiaosen Liu,Kai Cheng,Jinyan Wang,Bo Shen,Jin Wei	2023	14
14	Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs IEEE Electron Device Letters ·Zheyang Zheng,Li Zhang,Wenjie Song,Tao Chen,Sirui Feng,Yat Hon Ng,Jiahui Sun,Han Xu,Song Yang,Jin Wei,Kevin J. Chen	2021	24
15	650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications IEEE Transactions on Industrial Electronics ·Kailun Zhong,Yuru Wang,Gang Lyu,Jin Wei,Jiahui Sun,Kevin J. Chen	2021	9
16	Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs IEEE Transactions on Industrial Electronics ·Han Xu,Gaofei Tang,Jin Wei,Zheyang Zheng,Kevin J. Chen	2021	23
17	Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET IEEE Journal of Emerging and Selected Topics in Power Electronics ·Jiahui Sun,Jin Wei,Zheyang Zheng,Yuru Wang,Kevin J. Chen	2019	55
18	Identifying the Location of Hole-Induced Gate Degradation in LPCVD−SiN x /GaN MIS-FETs under High Reverse-Bias Stress Zheyang Zheng,Mengyuan Hua,Jin Wei,Zhaofu Zhang,Jing Chen	2019	2
19	Dynamic OFF-State Current (Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -GaN Gate HEMTs With an Ohmic Gate Contact IEEE Electron Device Letters ·Yuru Wang,Mengyuan Hua,Gaofei Tang,Jiacheng Lei,Zheyang Zheng,Jin Wei,Kevin J. Chen	2018	35
20	SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Huaping Jiang,Jin Wei,Xiaoping Dai,Max Reinhold,Maolong Ke,Xiaochuan Deng,Yogesh Sharma,Henius,Philip Mawby	2017	51

About Jin Wei

Jin Wei is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 201 papers that have together received 4.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (146 papers), Silicon Carbide Semiconductor Technologies (103 papers), Semiconductor materials and devices (91 papers), Advancements in Semiconductor Devices and Circuit Design (55 papers), Ga2O3 and related materials (46 papers), Semiconductor Quantum Structures and Devices (30 papers), ZnO doping and properties (23 papers) and Radio Frequency Integrated Circuit Design (8 papers). The work is most often cited by research in Condensed Matter Physics (3.1k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Electrical and Electronic Engineering (3.5k citations), Atomic and Molecular Physics, and Optics (693 citations) and Materials Chemistry (592 citations). Jin Wei has collaborated with scholars based in China, Hong Kong and United Kingdom. Frequent co-authors include Kevin J. Chen, Zheyang Zheng, Gaofei Tang, Mengyuan Hua, Song Yang, Huaping Jiang, Meng Zhang, Li Zhang, Yuru Wang and Jiabei He. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Power Electronics, IEEE Transactions on Industrial Electronics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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