Jin Wei

5.5k total citations · 1 hit paper
201 papers, 4.2k citations indexed

About

Jin Wei is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jin Wei has authored 201 papers receiving a total of 4.2k indexed citations (citations by other indexed papers that have themselves been cited), including 163 papers in Electrical and Electronic Engineering, 146 papers in Condensed Matter Physics and 47 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jin Wei's work include GaN-based semiconductor devices and materials (146 papers), Silicon Carbide Semiconductor Technologies (103 papers) and Semiconductor materials and devices (91 papers). Jin Wei is often cited by papers focused on GaN-based semiconductor devices and materials (146 papers), Silicon Carbide Semiconductor Technologies (103 papers) and Semiconductor materials and devices (91 papers). Jin Wei collaborates with scholars based in China, Hong Kong and United Kingdom. Jin Wei's co-authors include Kevin J. Chen, Zheyang Zheng, Gaofei Tang, Mengyuan Hua, Song Yang, Huaping Jiang, Meng Zhang, Li Zhang, Yuru Wang and Jiabei He and has published in prestigious journals such as Nucleic Acids Research, Applied Physics Letters and IEEE Transactions on Industrial Electronics.

In The Last Decade

Jin Wei

189 papers receiving 4.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Gallium nitride-based complementary logic integrated circuits

2021 214 citations Zheyang Zheng, Li Zhang et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Jin Wei China	36	3.5k	3.1k	1.4k	693	592	201	4.2k
Hsien‐Chin Chiu Taiwan	23	1.6k 0.5×	958 0.3×	535 0.4×	333 0.5×	341 0.6×	281	2.0k
Masahiro Horita Japan	25	1.4k 0.4×	1.1k 0.4×	611 0.4×	266 0.4×	621 1.0×	122	1.8k
Hongyu Yu China	23	2.0k 0.6×	606 0.2×	492 0.4×	197 0.3×	1.2k 2.1×	112	2.5k
Chu‐Young Cho South Korea	19	723 0.2×	1.1k 0.4×	735 0.5×	431 0.6×	947 1.6×	38	1.9k
X. Granados Spain	24	539 0.2×	1.4k 0.4×	820 0.6×	211 0.3×	724 1.2×	137	2.0k
Yevgeniy Puzyrev United States	23	1.0k 0.3×	733 0.2×	428 0.3×	250 0.4×	656 1.1×	42	1.5k
Zhiyong Qiu Japan	24	928 0.3×	760 0.2×	648 0.5×	1.8k 2.6×	633 1.1×	74	2.3k
Abhishek Motayed United States	25	1.3k 0.4×	685 0.2×	382 0.3×	297 0.4×	880 1.5×	72	1.9k
Jennifer K. Hite United States	33	1.8k 0.5×	2.0k 0.7×	1.4k 1.0×	563 0.8×	2.0k 3.4×	159	3.5k

Countries citing papers authored by Jin Wei

Since Specialization

Citations

This map shows the geographic impact of Jin Wei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jin Wei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jin Wei more than expected).

Fields of papers citing papers by Jin Wei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jin Wei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jin Wei. The network helps show where Jin Wei may publish in the future.

Co-authorship network of co-authors of Jin Wei

This figure shows the co-authorship network connecting the top 25 collaborators of Jin Wei. A scholar is included among the top collaborators of Jin Wei based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jin Wei. Jin Wei is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Yang, Junjie, Jiawei Cui, Xuelin Yang, et al.. (2025). 900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect. Applied Physics Letters. 126(16). 1 indexed citations

Yang, Junjie, Xiaosen Liu, Maojun Wang, et al.. (2025). Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell. IEEE Electron Device Letters. 46(8). 1277–1280.

Yang, Junjie, Xuelin Yang, Maojun Wang, et al.. (2025). GaN-on-Si monolithic bidirectional switch with virtual body to suppress substrate-induced dynamic ON-resistance degradation. Applied Physics Letters. 127(21).

Yang, Junjie, Jin Wei, Yanlin Wu, et al.. (2024). Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT. Applied Physics Letters. 124(10). 6 indexed citations

Wei, Jin, Junjie Yang, Jiawei Cui, et al.. (2024). High-Current E-Mode InGaN/GaN p-FET on p-GaN Gate HEMT Platform. IEEE Electron Device Letters. 46(2). 139–142. 6 indexed citations

Yang, Junjie, Yanlin Wu, Jiawei Cui, et al.. (2024). Design and Development of p-GaN Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 263–266. 1 indexed citations

Li, Teng, Jin Wei, Meng Zhang, et al.. (2024). Polarization Enhanced GaN Complementary Logic Circuits with Short Propagation Delay. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1–4. 2 indexed citations

Yang, Junjie, Jiawei Cui, Jinyan Wang, et al.. (2024). 10-kV E-mode GaN Lateral Superjunction Transistor. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1–4. 1 indexed citations

Li, Teng, Meng Zhang, Jiawei Cui, et al.. (2024). Polarization-Assisted Acceptor Ionization in E-Mode GaN p-FET on 650-V E-mode p-GaN Gate HEMT (EPH) Platform. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 160–163. 4 indexed citations

10.

Zheng, Q., Jiawei Cui, Junjie Yang, et al.. (2024). Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 534–537. 3 indexed citations

11.

Wei, Jin, Zheyang Zheng, Gaofei Tang, et al.. (2023). GaN Power Integration Technology and Its Future Prospects. IEEE Transactions on Electron Devices. 71(3). 1365–1382. 51 indexed citations

12.

Liu, Xuan, Maojun Wang, Jin Wei, et al.. (2023). Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated With Hydrogen Modulated In-Situ pn Junction. IEEE Journal of the Electron Devices Society. 11. 485–489. 1 indexed citations

13.

Xu, Han, Gaofei Tang, Jin Wei, Zheyang Zheng, & Kevin J. Chen. (2021). Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs. IEEE Transactions on Industrial Electronics. 69(7). 6784–6793. 23 indexed citations

14.

Wei, Jin, Han Xu, Ruiliang Xie, & Kevin J. Chen. (2020). Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor. Semiconductor Science and Technology. 36(2). 24006–24006. 9 indexed citations

15.

Sun, Jiahui, Jin Wei, Zheyang Zheng, Gang Lyu, & Kevin J. Chen. (2020). Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 313–316. 15 indexed citations

16.

Wei, Jin, Ruiliang Xie, Han Xu, et al.. (2019). Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs. IEEE Electron Device Letters. 40(4). 526–529. 151 indexed citations

17.

Wang, Yuru, Gang Lyu, Jin Wei, et al.. (2019). A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor. Applied Physics Express. 12(10). 106505–106505. 10 indexed citations

18.

Sun, Jiahui, Jin Wei, Zheyang Zheng, Yuru Wang, & Kevin J. Chen. (2019). Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET. IEEE Journal of Emerging and Selected Topics in Power Electronics. 7(3). 1539–1546. 55 indexed citations

19.

Wei, Jin. (2012). The countermeasures and thinking on redundant publication and duplicate submission.

20.

Jiang, Peng, Hao Wu, Jin Wei, et al.. (2007). RF-DYMHC: detecting the yeast meiotic recombination hotspots and coldspots by random forest model using gapped dinucleotide composition features. Nucleic Acids Research. 35(Web Server). W47–W51. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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