Jiawei Cui

775 total citations
34 papers, 555 citations indexed

About

Jiawei Cui is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Jiawei Cui has authored 34 papers receiving a total of 555 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 24 papers in Condensed Matter Physics and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Jiawei Cui's work include GaN-based semiconductor devices and materials (24 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Semiconductor materials and devices (11 papers). Jiawei Cui is often cited by papers focused on GaN-based semiconductor devices and materials (24 papers), Silicon Carbide Semiconductor Technologies (11 papers) and Semiconductor materials and devices (11 papers). Jiawei Cui collaborates with scholars based in China, Hong Kong and Poland. Jiawei Cui's co-authors include Xiao Sun, Yiping Wang, Yan Zhang, Jinfeng Yuan, Xiaofeng Huang, Ling‐Yan He, Qiao Zhu, Li‐Ming Cao, Bo Shen and Jin Wei and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and Cell Death and Differentiation.

In The Last Decade

Jiawei Cui

28 papers receiving 545 citations

Peers

Countries citing papers authored by Jiawei Cui

Since Specialization

Citations

This map shows the geographic impact of Jiawei Cui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiawei Cui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiawei Cui more than expected).

Fields of papers citing papers by Jiawei Cui

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiawei Cui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiawei Cui. The network helps show where Jiawei Cui may publish in the future.

Co-authorship network of co-authors of Jiawei Cui

This figure shows the co-authorship network connecting the top 25 collaborators of Jiawei Cui. A scholar is included among the top collaborators of Jiawei Cui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiawei Cui. Jiawei Cui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability 2025 ·IEEE Electron Device Letters ·Junjie Yang, (unknown), Jiawei Cui, (unknown), (unknown), (unknown), (unknown), Maojun Wang, Jinyan Wang, Xiaosen Liu, Jin Wei, Bo Shen	1
2	Split-p-GaN Gate HEMT With Suppressed Negative V_th Shift and Enhanced Robustness Against False Turn-On 2025 ·IEEE Electron Device Letters ·(unknown), Jin Wei, Maojun Wang, (unknown), (unknown), Junjie Yang, Jiawei Cui, (unknown), (unknown), (unknown), Qimeng Jiang, Gaofei Tang, Bo Shen	1
3	900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect 2025 ·Applied Physics Letters ·(unknown), Junjie Yang, (unknown), Jiawei Cui, (unknown), Xuelin Yang, Xiaosen Liu, Maojun Wang, Bo Shen, Jin Wei	1
4	Process‐Dependent Performance of Recessed‐Gate Enhancement‐Mode GaN p‐FET 2025 ·physica status solidi (a) ·(unknown), Meng Zhang, (unknown), Jiawei Cui, Junjie Yang, Maojun Wang, Yamin Zhang, Shiwei Feng, Jin Wei	1
5	Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits 2025 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), (unknown), Jiawei Cui, (unknown), Junjie Yang, (unknown), (unknown), Maojun Wang, Yamin Zhang, Shiwei Feng, Bo Shen, Meng Zhang, Jin Wei	0
6	High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process 2025 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), Jiawei Cui, Junjie Yang, (unknown), (unknown), (unknown), (unknown), Maojun Wang, Bo Shen, Yamin Zhang, Shiwei Feng, Meng Zhang, Jin Wei	3
7	GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON 2024 ·Applied Physics Letters ·Jiawei Cui, Junjie Yang, (unknown), Teng Li, (unknown), Xiaosen Liu, Jinyan Wang, Maojun Wang, Bo Shen, Jin Wei	0
8	Polarization-Assisted Acceptor Ionization in E-Mode GaN p-FET on 650-V E-mode p-GaN Gate HEMT (EPH) Platform 2024 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Teng Li, Meng Zhang, (unknown), Jiawei Cui, Junjie Yang, Yanlin Wu, (unknown), Yamin Zhang, Xuelin Yang, Maojun Wang, Shiwei Feng, Bo Shen, Jin Wei	4
9	Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices 2024 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·(unknown), (unknown), Q. Zheng, Jiawei Cui, Junjie Yang, (unknown), Bo Shen, Meng Zhang, Maojun Wang, Jin Wei	3
10	Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance 2024 ·IEEE Electron Device Letters ·Junjie Yang, Jin Wei, Maojun Wang, (unknown), Yanlin Wu, Jiawei Cui, (unknown), Xuelin Yang, Jinyan Wang, Bo Shen	3
11	Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT 2024 ·Applied Physics Letters ·Junjie Yang, Jin Wei, Yanlin Wu, (unknown), Jiawei Cui, Xuelin Yang, Xiaosen Liu, Jinyan Wang, Yilong Hao, Maojun Wang, Bo Shen	6
12	Design and Development of p-GaN Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability 2024 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·(unknown), Junjie Yang, Yanlin Wu, (unknown), Jiawei Cui, Bo Shen, Meng Zhang, Maojun Wang, Jin Wei	1
13	Virtual-Body p-GaN Gate HEMT With Enhanced Ruggedness Against Hot-Electron-Induced Degradation 2024 ·IEEE Electron Device Letters ·Junjie Yang, Maojun Wang, (unknown), Yanlin Wu, Jiawei Cui, (unknown), (unknown), Jinyan Wang, Xiaosen Liu, Xuelin Yang, Bo Shen, Jin Wei	2
14	High-Current E-Mode InGaN/GaN p-FET on p-GaN Gate HEMT Platform 2024 ·IEEE Electron Device Letters ·(unknown), Jin Wei, Junjie Yang, (unknown), (unknown), (unknown), Jiawei Cui, (unknown), Xuelin Yang, Maojun Wang, Bo Shen	6
15	Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer 2024 ·IEEE Transactions on Electron Devices ·(unknown), Meng Zhang, (unknown), Jiawei Cui, Junjie Yang, Yanlin Wu, (unknown), Yamin Zhang, Xuelin Yang, Maojun Wang, Shiwei Feng, Bo Shen, Jin Wei	18
16	High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension 2024 ·IEEE Transactions on Electron Devices ·Jiawei Cui, Yanlin Wu, Junjie Yang, (unknown), (unknown), Xiaosen Liu, Kai Cheng, Xuelin Yang, Yilong Hao, Jinyan Wang, Bo Shen, Maojun Wang, Jin Wei	9
17	Chitinase 3‐like 1 overexpression aggravates hypoxia–reoxygenation injury in IEC‐6 cells by inhibiting the PI3K/AKT signalling pathway 2024 ·Experimental Physiology ·Lei Mi, (unknown), Yingying Zhang, Ming Chen, Jiawei Cui, Rui Chen, Xiao Zheng, Changqing Jing	0
18	Polarization Enhanced GaN Complementary Logic Circuits with Short Propagation Delay 2024 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Teng Li, Jin Wei, Meng Zhang, (unknown), (unknown), (unknown), (unknown), Jiawei Cui, Junjie Yang, (unknown), Xuelin Yang, Zheyang Zheng, Maojun Wang, Kevin J. Chen, Bo Shen	2
19	10-kV E-mode GaN Lateral Superjunction Transistor 2024 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Junjie Yang, (unknown), Jiawei Cui, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Jinyan Wang, Xiaosen Liu, Yan Wang, Maojun Wang, Bo Shen, Jin Wei	1
20	Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique 2023 ·IEEE Electron Device Letters ·Jiawei Cui, Maojun Wang, Yanlin Wu, Junjie Yang, (unknown), (unknown), (unknown), Xuelin Yang, Xiaosen Liu, Kai Cheng, Jinyan Wang, Bo Shen, Jin Wei	14

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact