Bing Xie

1.2k total citations
40 papers, 982 citations indexed

About

Bing Xie is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Bing Xie has authored 40 papers receiving a total of 982 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 27 papers in Condensed Matter Physics and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Bing Xie's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (20 papers) and Ga2O3 and related materials (16 papers). Bing Xie is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (20 papers) and Ga2O3 and related materials (16 papers). Bing Xie collaborates with scholars based in China, Hong Kong and United States. Bing Xie's co-authors include Maojun Wang, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Bo Shen, Kevin J. Chen, Min Yu, Chuan Zhang and Zhe Xü and has published in prestigious journals such as Angewandte Chemie International Edition, Small and IEEE Access.

In The Last Decade

Bing Xie

37 papers receiving 932 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bing Xie China 18 856 747 491 172 137 40 982
Fatima Husna United States 16 509 0.6× 1.2k 1.6× 278 0.6× 133 0.8× 173 1.3× 31 1.3k
Nariaki Ikeda Japan 12 758 0.9× 704 0.9× 373 0.8× 157 0.9× 108 0.8× 40 881
Qihao Song United States 14 494 0.6× 583 0.8× 147 0.3× 75 0.4× 69 0.5× 48 690
Yoshiharu Anda Japan 12 376 0.4× 486 0.7× 208 0.4× 102 0.6× 46 0.3× 27 563
Matthew Porter United States 10 207 0.2× 275 0.4× 197 0.4× 139 0.8× 48 0.4× 29 430
Wei‐I Lee Taiwan 12 276 0.3× 196 0.3× 165 0.3× 233 1.4× 71 0.5× 44 437
J. D. Blevins United States 13 184 0.2× 271 0.4× 201 0.4× 246 1.4× 21 0.2× 17 471
Jinwan Kim South Korea 11 308 0.4× 134 0.2× 162 0.3× 145 0.8× 58 0.4× 15 361
L Kopera Slovakia 18 828 1.0× 132 0.2× 330 0.7× 129 0.8× 46 0.3× 82 896
Ippei Suzuki Japan 16 165 0.2× 135 0.2× 311 0.6× 166 1.0× 389 2.8× 45 602

Countries citing papers authored by Bing Xie

Since Specialization
Citations

This map shows the geographic impact of Bing Xie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bing Xie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bing Xie more than expected).

Fields of papers citing papers by Bing Xie

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bing Xie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bing Xie. The network helps show where Bing Xie may publish in the future.

Co-authorship network of co-authors of Bing Xie

This figure shows the co-authorship network connecting the top 25 collaborators of Bing Xie. A scholar is included among the top collaborators of Bing Xie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bing Xie. Bing Xie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xie, Bing, et al.. (2026). Local Structure Strategies Promoting Lead‐Free Dielectric Energy‐Storage Applications. Small. 22(11). e12097–e12097.
2.
Cao, Wenwu, Tianyi Sun, Huajie Luo, et al.. (2025). A Strategy of Enhancing Polarization to Achieve Excellent Energy Storage Performance in Simple Bi0.5K0.5TiO3‐Based Relaxors. Angewandte Chemie International Edition. 64(15). e202500516–e202500516. 4 indexed citations
3.
4.
Wang, Maojun, Jin Wei, Pengfei Wang, et al.. (2024). Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs. IEEE Electron Device Letters. 45(10). 1728–1731. 1 indexed citations
5.
Wáng, Qīng, Xiaotong Wu, Shiyan Wang, et al.. (2024). Mechanical Stress-Oxidative Stress Axis: Biological Basis in the Vaginal Wall and Pelvic Floor Muscles of Rats with Simulated Birth Injury. International Urogynecology Journal. 35(11). 2141–2152. 2 indexed citations
6.
Xie, Bing, et al.. (2021). Low-Frequency Intravesical Electrical Stimulation for the Treatment of Acute Urinary Retention: A Promising Therapeutic Approach. Frontiers in Medicine. 8. 572846–572846. 2 indexed citations
7.
Wang, Maojun, et al.. (2021). Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study. Electronics. 10(8). 942–942. 8 indexed citations
8.
Tao, Ming, Bing Xie, Cheng P. Wen, et al.. (2018). Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process. IEEE Transactions on Electron Devices. 65(4). 1453–1457. 47 indexed citations
9.
Wang, Maojun, Bing Xie, Cheng P. Wen, et al.. (2015). Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment. IEEE Electron Device Letters. 36(8). 757–759. 21 indexed citations
10.
Fu, Rong, et al.. (2015). Analysis on the operating characteristic of UHVDC hierarchical connection mode to AC system. 1834–1837. 5 indexed citations
11.
12.
Xü, Zhe, Wengang Wu, Xiaohua Ma, et al.. (2014). Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio. IEEE Electron Device Letters. 35(12). 1200–1202. 30 indexed citations
13.
Liu, Jingqian, Jinyan Wang, Zhe Xü, et al.. (2014). Investigation of oxidation process in self‐terminating gate recess wet etching technique for AlGaN/GaN normally‐off MOSFETs. Electronics Letters. 50(25). 1980–1982. 1 indexed citations
14.
Wang, Maojun, Dawei Yan, Chuan Zhang, et al.. (2014). Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement. IEEE Electron Device Letters. 35(11). 1094–1096. 59 indexed citations
15.
Li, Xiao‐Ping, Jinyan Wang, Yang Liu, et al.. (2013). Simulation and Analysis of High Breakdown Voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 Gate Dielectric. ECS Transactions. 52(1). 841–846. 1 indexed citations
16.
Liu, Yang, Jinyan Wang, Zhe Xü, et al.. (2013). Oxidation‐based wet‐etching method for AlGaN/GaN structure with different oxidation times and temperatures. Rare Metals. 34(1). 1–5. 23 indexed citations
17.
Wang, Ye, Maojun Wang, Bing Xie, et al.. (2013). High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique. IEEE Electron Device Letters. 34(11). 1370–1372. 161 indexed citations
18.
Zhang, Xinming, Shi An, & Bing Xie. (2012). A Cell-Based Regional Evacuation Model with Contra-Flow Lane Deployment. Advanced engineering forum. 5. 20–25. 5 indexed citations
19.
Xu, Mingzhen, et al.. (2001). Investigation of the proportional difference characteristics of MOSFETs. International Journal of Electronics. 88(4). 383–393. 1 indexed citations
20.
Xu, Mingzhen, et al.. (1998). Proportional difference operator method and itsapplication to studying the saturation characteristics of MOSFETs. Electronics Letters. 34(21). 2067–2069. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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