Qi Zhou

2.2k total citations
139 papers, 1.8k citations indexed

About

Qi Zhou is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Qi Zhou has authored 139 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 119 papers in Electrical and Electronic Engineering, 94 papers in Condensed Matter Physics and 42 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Qi Zhou's work include GaN-based semiconductor devices and materials (94 papers), Silicon Carbide Semiconductor Technologies (66 papers) and Semiconductor materials and devices (47 papers). Qi Zhou is often cited by papers focused on GaN-based semiconductor devices and materials (94 papers), Silicon Carbide Semiconductor Technologies (66 papers) and Semiconductor materials and devices (47 papers). Qi Zhou collaborates with scholars based in China, Hong Kong and United States. Qi Zhou's co-authors include Bo Zhang, Wanjun Chen, Yuanyuan Shi, Kevin J. Chen, Sen Huang, Zhaoji Li, Jin Yang, Wei Ke, Xinyu Liu and Chao Liu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

Qi Zhou

124 papers receiving 1.7k citations

Peers

Qi Zhou
B. Hughes United States
W. Grieshaber France
Yutong Huang United States
Zhiguo Yu China
J. Ogawa Japan
K. Kajikawa Japan
Jianzhao Geng United Kingdom
Afef Kedous‐Lebouc France
Pankaj B. Shah United States
Paulo V. Trevizoli Brazil
B. Hughes United States
Qi Zhou
Citations per year, relative to Qi Zhou Qi Zhou (= 1×) peers B. Hughes

Countries citing papers authored by Qi Zhou

Since Specialization
Citations

This map shows the geographic impact of Qi Zhou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qi Zhou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qi Zhou more than expected).

Fields of papers citing papers by Qi Zhou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qi Zhou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qi Zhou. The network helps show where Qi Zhou may publish in the future.

Co-authorship network of co-authors of Qi Zhou

This figure shows the co-authorship network connecting the top 25 collaborators of Qi Zhou. A scholar is included among the top collaborators of Qi Zhou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Qi Zhou. Qi Zhou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Zhou, Xin, Zhao Wang, Qi Zhou, et al.. (2023). Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs. IEEE Transactions on Electron Devices. 70(8). 4081–4086. 16 indexed citations
4.
Zhou, Chunhua, et al.. (2023). Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress. IEEE Transactions on Power Electronics. 39(2). 2247–2257. 4 indexed citations
5.
Liu, Zhen, et al.. (2023). Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses. IEEE Transactions on Instrumentation and Measurement. 72. 1–11. 2 indexed citations
6.
Su, Yuanzhang, et al.. (2022). The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique. IEEE Transactions on Electron Devices. 69(10). 5496–5502. 7 indexed citations
7.
Zhou, Qi, Wei Gao, Yong Cai, et al.. (2022). The Modulation Effect of LPCVD-Si x N y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure. IEEE Transactions on Electron Devices. 69(9). 4828–4834. 4 indexed citations
8.
Zhou, Qi, et al.. (2022). A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage. IEEE Transactions on Electron Devices. 69(3). 1219–1225. 8 indexed citations
9.
Wang, Fangzhou, Wanjun Chen, Ruize Sun, et al.. (2020). An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps. Journal of Physics D Applied Physics. 54(9). 95107–95107. 18 indexed citations
10.
Chen, Wanjun, Qijun Zhou, Yun Xia, et al.. (2020). Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition. IEEE Transactions on Device and Materials Reliability. 20(1). 214–220. 4 indexed citations
11.
Zhou, Qi, Wei Xiong, Peng Huang, et al.. (2020). Ultrathin-Barrier AlGaN/GaN Hybrid-Anode-Diode With Optimized Barrier Thickness for Zero-Bias Microwave Mixer. IEEE Transactions on Electron Devices. 67(3). 828–833. 11 indexed citations
12.
Xu, Xiaorui, Wanjun Chen, Shu-yi Zhang, et al.. (2020). Design of an Isolated Circuit Breaker With Robust Interruption Capability for DC Microgrid Protection. IEEE Transactions on Industrial Electronics. 68(12). 12408–12417. 9 indexed citations
13.
Wang, Fangzhou, Wanjun Chen, Xiaorui Xu, et al.. (2020). Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism. IEEE Transactions on Electron Devices. 68(1). 175–183. 23 indexed citations
14.
Zhou, Qi, Jiacheng Lei, Peng Huang, et al.. (2020). High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation. IEEE Transactions on Electron Devices. 67(10). 4136–4140. 12 indexed citations
15.
Chen, Wanjun, Xiaorui Xu, Xiyuan Liu, et al.. (2019). An Ultralow Loss Insulated Gate Bipolar Transistor With Emitter Dual Injection. IEEE Transactions on Electron Devices. 66(10). 4314–4319. 4 indexed citations
16.
Zhou, Qi, et al.. (2019). A variable nanotrench structure for electric field modulation in AlGaN/GaN devices. Japanese Journal of Applied Physics. 58(SB). SBBD02–SBBD02. 1 indexed citations
17.
Zhang, Jinhan, Xuanwu Kang, Xinhua Wang, et al.. (2018). Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures. IEEE Electron Device Letters. 39(6). 847–850. 49 indexed citations
18.
Hao, Ronghui, Weiyi Li, Kai Fu, et al.. (2017). Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs. IEEE Electron Device Letters. 38(11). 1567–1570. 102 indexed citations
19.
Chen, Wanjun, Chao Liu, Yawei Liu, et al.. (2017). Design and Characterization of High $di/dt$ CS-MCT for Pulse Power Applications. IEEE Transactions on Electron Devices. 64(10). 4206–4212. 18 indexed citations
20.
Shi, Yuanyuan, Qi Zhou, Yu Shi, et al.. (2017). Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device. Nanoscale Research Letters. 12(1). 342–342. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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