S.J. Chang

940 total citations
48 papers, 812 citations indexed

About

S.J. Chang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, S.J. Chang has authored 48 papers receiving a total of 812 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Condensed Matter Physics, 24 papers in Electronic, Optical and Magnetic Materials and 19 papers in Electrical and Electronic Engineering. Recurrent topics in S.J. Chang's work include GaN-based semiconductor devices and materials (40 papers), Ga2O3 and related materials (23 papers) and Semiconductor Quantum Structures and Devices (14 papers). S.J. Chang is often cited by papers focused on GaN-based semiconductor devices and materials (40 papers), Ga2O3 and related materials (23 papers) and Semiconductor Quantum Structures and Devices (14 papers). S.J. Chang collaborates with scholars based in Taiwan, China and South Korea. S.J. Chang's co-authors include Y.K. Su, Shih‐Chang Shei, C.T. Lee, Chun Yu, P. C. Chang, Wei‐Chih Lai, C.F. Shen, Y.P. Hsu, H. M. Lo and T.K. Ko and has published in prestigious journals such as Advanced Materials, Journal of Applied Physics and Advanced Energy Materials.

In The Last Decade

S.J. Chang

47 papers receiving 798 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S.J. Chang Taiwan	16	612	417	342	298	220	48	812
Y.P. Hsu Taiwan	17	577 0.9×	307 0.7×	379 1.1×	215 0.7×	207 0.9×	24	700
Sg. Fujita Japan	16	372 0.6×	397 1.0×	556 1.6×	305 1.0×	293 1.3×	42	859
Ziguang Ma China	13	506 0.8×	387 0.9×	436 1.3×	275 0.9×	266 1.2×	59	833
Mustafa Alevli Türkiye	15	559 0.9×	459 1.1×	390 1.1×	290 1.0×	113 0.5×	46	791
S. Nagai Japan	9	418 0.7×	449 1.1×	463 1.4×	225 0.8×	224 1.0×	19	894
Gou-Chung Chi Taiwan	14	394 0.6×	301 0.7×	420 1.2×	231 0.8×	161 0.7×	45	678
K. Hazu Japan	15	550 0.9×	258 0.6×	318 0.9×	376 1.3×	167 0.8×	48	724
C. J. Tun Taiwan	17	546 0.9×	333 0.8×	499 1.5×	414 1.4×	153 0.7×	46	781
Zhonghai Yu United States	18	380 0.6×	665 1.6×	736 2.2×	385 1.3×	187 0.8×	50	1.1k
H.‐H. Wehmann Germany	16	299 0.5×	305 0.7×	369 1.1×	232 0.8×	190 0.9×	44	653

Countries citing papers authored by S.J. Chang

Since Specialization

Citations

This map shows the geographic impact of S.J. Chang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.J. Chang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.J. Chang more than expected).

Fields of papers citing papers by S.J. Chang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.J. Chang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.J. Chang. The network helps show where S.J. Chang may publish in the future.

Co-authorship network of co-authors of S.J. Chang

This figure shows the co-authorship network connecting the top 25 collaborators of S.J. Chang. A scholar is included among the top collaborators of S.J. Chang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.J. Chang. S.J. Chang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ahn, Hyungju, S.J. Chang, Nam‐Gyu Park, et al.. (2025). Toward a Rational Design of Conjugated Copolymers with Oxygenated Side Chains for Boosting Thermoelectric Properties. Advanced Energy Materials.

Cho, Seong‐Ho, et al.. (2025). Triple‐Additive Strategy for Enhanced Material and Device Stability in Perovskite Solar Cells. Advanced Materials. 37(12). e2413712–e2413712. 10 indexed citations

Chang, P. C., et al.. (2014). AlGaN/GaN High Electron Mobility Transistors with Multi‐Mg_xN_y/GaN Buffer. Journal of Nanomaterials. 2014(1). 1 indexed citations

Shei, Shih‐Chang, H. M. Lo, Wei‐Chih Lai, Wen‐Chin Lin, & S.J. Chang. (2011). GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching. IEEE Photonics Technology Letters. 23(16). 1172–1174. 4 indexed citations

Lo, H. M., et al.. (2011). Postannealing Effect on ITO/p₊-GaP with a Diffused Layer. Journal of The Electrochemical Society. 158(5). H506–H509. 4 indexed citations

Lam, Kin-Tak, et al.. (2009). Effects of the sapphire substrate thickness on the performances of GaN-based LEDs. Semiconductor Science and Technology. 24(6). 65002–65002. 2 indexed citations

Chuang, Ricky W., et al.. (2008). Nitride-Based MSM Photodetectors with a HEMT Structure and a Low-Temperature AlGaN Intermediate Layer. Journal of The Electrochemical Society. 155(12). H959–H959. 4 indexed citations

Chang, P. C., et al.. (2007). High-Detectivity Nitride-Based MSM Photodetectors on InGaN–GaN Multiquantum Well With the Unactivated Mg-Doped GaN Layer. IEEE Journal of Quantum Electronics. 43(11). 1060–1064. 14 indexed citations

Shen, C.F., et al.. (2007). Nitride-Based High-Power Flip-Chip LED With Double-Side Patterned Sapphire Substrate. IEEE Photonics Technology Letters. 19(10). 780–782. 68 indexed citations

10.

Lam, Kin-Tak, et al.. (2007). Nitride-based photodetectors with unactivated Mg-doped GaN cap layer. Sensors and Actuators A Physical. 143(2). 191–195. 12 indexed citations

11.

Hung, Shang-Chao, Y.K. Su, S.J. Chang, & Tsair‐Chun Liang. (2006). Controlled Self-formation of GaN Nanotubes by Inductively Coupled Plasmas Etching. 24. 1392–1395. 3 indexed citations

12.

Yu, Chun, S.J. Chang, Po-Chun Chang, Yu‐Cheng Lin, & C.T. Lee. (2006). Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers. Superlattices and Microstructures. 40(4-6). 470–475. 5 indexed citations

13.

Shei, Shih‐Chang, S.J. Chang, Yifan Su, et al.. (2005). Rapid thermal annealed InGaN/GaN flip-chip LEDs. IEEE Transactions on Electron Devices. 53(1). 32–37. 17 indexed citations

14.

Su, Y.K., et al.. (2005). Nitride-based LEDs with n/sup -/-GaN current spreading layers. IEEE Electron Device Letters. 26(12). 891–893. 23 indexed citations

15.

Su, Y.K., et al.. (2005). Nitride-Based MQW LEDs With Multiple GaN–SiN Nucleation Layers. IEEE Transactions on Electron Devices. 52(6). 1104–1109. 16 indexed citations

16.

Tezuka, Tetsuo, et al.. (2004). High quality GaN epitaxial layers grown by modulated beam growth method. Materials Chemistry and Physics. 86(1). 161–164. 1 indexed citations

17.

Chang, S.J., et al.. (2004). Effect of sintering conditions on characteristics of PbTiO3–PbZrO3–Pb(Mg1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3. Materials Science and Engineering B. 111(2-3). 124–130. 20 indexed citations

18.

Chang, Chao, S.J. Chang, Y.K. Su, et al.. (2004). Nitride-Based LEDs With Textured Side Walls. IEEE Photonics Technology Letters. 16(3). 750–752. 58 indexed citations

19.

Chang, S.J., Liang Wu, Y.K. Su, et al.. (2004). Nitride-Based LEDs With 800<tex>$^circhboxC$</tex>Grown p-AlInGaN–GaN Double-Cap Layers. IEEE Photonics Technology Letters. 16(6). 1447–1449. 91 indexed citations

20.

Tu, R. C., Y.K. Su, Der‐Yuh Lin, et al.. (1998). Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells. Journal of Applied Physics. 83(2). 1043–1048. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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