W. Van der Stricht

910 citations

29 papers · 772 indexed · h-index 13

Condensed Matter Physics top 2%
Atomic and Molecular Physics, and Optics top 10%
Electronic, Optical and Magnetic Materials top 10%
Materials Chemistry
Mechanics of Materials top 5%

Co-authors: K.P. O’Donnell P. G. Middleton Ingrid Moerman Robert Martin E. J. Thrush K. Jacobs L. Considine Piet Demeester
Topics: GaN-based semiconductor devices and materials (28 papers)Semiconductor Quantum Structures and Devices (10 papers)Metal and Thin Film Mechanics (10 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Crystal Growth physica status solidi (b)
Partner nations: Belgium United Kingdom China

In The Last Decade

W. Van der Stricht

29 papers receiving 750 citations

Peers

Countries citing papers authored by W. Van der Stricht

Since Specialization

Citations

This map shows the geographic impact of W. Van der Stricht's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Van der Stricht with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Van der Stricht more than expected).

Fields of papers citing papers by W. Van der Stricht

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Van der Stricht. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Van der Stricht. The network helps show where W. Van der Stricht may publish in the future.

Co-authorship network of co-authors of W. Van der Stricht

This figure shows the co-authorship network connecting the top 25 collaborators of W. Van der Stricht. A scholar is included among the top collaborators of W. Van der Stricht based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Van der Stricht. W. Van der Stricht is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A LOCAL SEARCH ALGORITHM FOR THE INVENTORY MATCHING PROBLEM IN A STEEL COMPANY 2006 ·IFAC Proceedings Volumes ·Birger Raa,W. Van der Stricht	1
2	Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O3(0 0 0 1) 2001 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown),A. Vantomme,(unknown),(unknown),W. Van der Stricht,K. Jacobs,Ingrid Moerman	9
3	The dependence of the optical energies on InGaN composition 2001 ·Materials Science and Engineering B ·K.P. O’Donnell,Robert Martin,C. Trager‐Cowan,Mark E. White,(unknown),C.J. Deatcher,P. G. Middleton,K. Jacobs,W. Van der Stricht,Claude Merlet,Bernard Gil,A. Vantomme,J. Frederick W. Mosselmans	29
4	Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam 2000 ·MRS Internet Journal of Nitride Semiconductor Research ·C. Trager‐Cowan,(unknown),F. Sweeney,(unknown),(unknown),(unknown),P. G. Middleton,(unknown),K.P. O’Donnell,W. Van der Stricht,Ingrid Moerman,Piet Demeester,M. F. Wu,A. Vantomme,David Zubía,S. D. Hersee	1
5	Indium segregation in InGaN quantum-well structures 2000 ·Applied Physics Letters ·N. S. Duxbury,U. Bangert,P. Dawson,E. J. Thrush,W. Van der Stricht,K. Jacobs,Ingrid Moerman	98
6	Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers 1999 ·Materials Science and Engineering B ·K.P. O’Donnell,Robert Martin,P. G. Middleton,(unknown),(unknown),W. Van der Stricht,Piet Demeester,Ingrid Moerman	8
7	Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD 1999 ·physica status solidi (b) ·N. S. Duxbury,P. Dawson,U. Bangert,E. J. Thrush,W. Van der Stricht,K. Jacobs,Ingrid Moerman	7
8	Intrinsic Infrared Luminescence from InGaN Epilayers 1999 ·physica status solidi (b) ·K.P. O’Donnell,Robert Martin,S. Pereira,A. F. Bangura,Mark E. White,W. Van der Stricht,K. Jacobs	18
9	Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD 1999 ·physica status solidi (a) ·J. J. Harris,(unknown),I. Harrison,(unknown),D. Korakakis,T.S. Cheng,C. T. Foxon,Z. Bougrioua,Ingrid Moerman,W. Van der Stricht,E. J. Thrush,B. Hamilton,(unknown)	13
10	Photoluminescence Mapping and Rutherford Backscattering Spectrometry of InGaN Epilayers 1999 ·physica status solidi (b) ·K.P. O’Donnell,Mark E. White,S. Pereira,M. F. Wu,A. Vantomme,W. Van der Stricht,K. Jacobs	6
11	Optical Spectroscopy and Composition of InGaN 1999 ·MRS Proceedings ·K.P. O’Donnell,Robert Martin,Mark E. White,K. Jacobs,W. Van der Stricht,Piet Demeester,A. Vantomme,M. F. Wu,J. Frederick W. Mosselmans	2
12	Growth and in situ monitoring of GaN using IR interference effects 1998 ·Journal of Crystal Growth ·L. Considine,E. J. Thrush,(unknown),K. Jacobs,W. Van der Stricht,Ingrid Moerman,(unknown),(unknown),Sung‐Ho Hwang,J. J. Song	7
13	Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy 1998 ·Applied Physics Letters ·P. Ruterana,G. Nouet,W. Van der Stricht,Ingrid Moerman,L. Considine	84
14	Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire 1998 ·Applied Physics Letters ·K.P. O’Donnell,P. G. Middleton,C. Trager‐Cowan,Colin L. Young,S. C. Bayliss,(unknown),W. Van der Stricht,Ingrid Moerman,Piet Demeester	8
15	Probing The Indium Mole Fraction In An Ingan Epilayer By Depth Resolved Cathodoluminescence 1997 ·MRS Proceedings ·C. Trager‐Cowan,P. G. Middleton,(unknown),K.P. O’Donnell,W. Van der Stricht,Ingrid Moerman,Piet Demeester	1
16	Optical linewidths of InGaN light emitting diodes and epilayers 1997 ·Applied Physics Letters ·K.P. O’Donnell,(unknown),H. Kalt,W. Van der Stricht,Ingrid Moerman,Piet Demeester,P. G. Middleton	61
17	MOVPE growth optimization of high quality InGaN films. 1997 ·MRS Internet Journal of Nitride Semiconductor Research ·W. Van der Stricht,Ingrid Moerman,Piet Demeester,L. Considine,E. J. Thrush,(unknown)	35
18	Hexagonal Growth Hillocks in GaN Epilayers 1996 ·MRS Proceedings ·P. G. Middleton,C. Trager‐Cowan,(unknown),K.P. O’Donnell,W. Van der Stricht,Ingrid Moerman,Piet Demeester	9
19	Study of GaN films grown by metalorganic chemical vapour deposition 1996 ·MRS Internet Journal of Nitride Semiconductor Research ·W. Van der Stricht,Ingrid Moerman,Piet Demeester,(unknown),E. J. Thrush	6
20	The Effect of a GaN Nucleation Layer on GaN Film Properties Grown by Metalorganic Chemical Vapor Deposition 1995 ·MRS Proceedings ·W. Van der Stricht,Ingrid Moerman,Piet Demeester,(unknown),E. J. Thrush,P. G. Middleton,C. Trager‐Cowan,K.P. O’Donnell	9

About W. Van der Stricht

W. Van der Stricht is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 29 papers that have together received 772 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (10 papers) and Metal and Thin Film Mechanics (10 papers). The work is most often cited by research in Condensed Matter Physics (673 citations), Electronic, Optical and Magnetic Materials (305 citations) and Atomic and Molecular Physics, and Optics (322 citations). W. Van der Stricht has collaborated with scholars based in Belgium, United Kingdom and China. Frequent co-authors include K.P. O’Donnell, P. G. Middleton, Ingrid Moerman, Robert Martin, E. J. Thrush, K. Jacobs, L. Considine, Piet Demeester, P. Ruterana and G. Nouet. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth and physica status solidi (b).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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