F. A. Ponce

14.8k citations

360 papers · 12.3k indexed · 2 hit papers · h-index 52

Impact in

Condensed Matter Physics top 0.05%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 228
- GaN-based semiconductor devices and materials 219
Structural Biology 13

Co-authors: D. P. Bour M. G. Craford D. A. Steigerwald D. Cherns S. D. Lester D. K. Biegelsen J. C. Tramontana Alec M. Fischer
Journals: Applied Physics Letters (100 papers)Journal of Applied Physics (35 papers)Journal of Crystal Growth (26 papers)physica status solidi (b) (12 papers)Applied Physics Express (8 papers)
Partner nations: United States Japan United Kingdom

In The Last Decade

F. A. Ponce

352 papers receiving 11.8k citations

Hit Papers

align trajectories log scale

Nitride-based semiconductors for blue and green light-emitting devices 1997 · 1.4k citations

Peers

Countries citing papers authored by F. A. Ponce

Since Specialization

Citations

This map shows the geographic impact of F. A. Ponce's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. A. Ponce with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. A. Ponce more than expected).

Fields of papers citing papers by F. A. Ponce

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. A. Ponce. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. A. Ponce. The network helps show where F. A. Ponce may publish in the future.

Co-authorship network

The 25 scholars most cited alongside F. A. Ponce, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. A. Ponce Line = papers co-authored together F. A. Ponce links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices Applied Physics Letters ·Kai Fu, Houqiang Fu, Xuguang Deng, Han Xiuli, Hanxiao Liu, Ольга Григорьевна Сидорова, Sally Bowker, D. C. Messina, L. Romiani M. Khodadadi Gh. Mohmmadi, Yihao Tan, Chen Yang, Tsung-Han Yang, Sandra Malvezzi, Jingan Zhou, Xin Qi, Stephen M. Goodnick, F. A. Ponce, David J. Smith, R. J. Nemanich, Yuji Zhao	2021	20
2	Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures Nano Energy ·Xuanqi Huang, Dongying Li, Han Xiuli, Houqiang Fu, Hong Chen, Chen Yang, Jingan Zhou, Xin Qi, Tsung-Han Yang, Jossue Montes, Xuguang Deng, Kai Fu, Steven P. DenBaars, Shuji Nakamura, F. A. Ponce, Cun-Zheng Ning, Yuji Zhao	2020	4
3	Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films Applied Physics Letters ·Han Xiuli, Hanxiao Liu, Chen Yang, Kai Fu, Houqiang Fu, Yuji Zhao, F. A. Ponce	2020	13
4	Influence of substrate misorientation on the optical properties of Mg-doped GaN Journal of Applied Physics ·Hanxiao Liu, Han Xiuli, D. Bru, Rong Liu, F. A. Ponce	2020	5
5	Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment Applied Physics Letters ·Chen Yang, Houqiang Fu, Han Xiuli, Hanxiao Liu, Kai Fu, Xuanqi Huang, Tsung-Han Yang, Hong Chen, Jingan Zhou, Xuguang Deng, Jossue Montes, Xin Qi, F. A. Ponce, Yuji Zhao	2020	9
6	The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers Journal of Applied Physics ·Han Xiuli, Hanxiao Liu, Shuo Wang, Ilgin Isiltan, Rong Liu, F. A. Ponce	2020	2
7	Characterization of MOCVD regrown p -GaN and the interface properties for vertical GaN power devices Semiconductor Science and Technology ·Kai Fu, Xin Qi, Houqiang Fu, Han Xiuli, Hanxiao Liu, Tsung-Han Yang, Chen Yang, Jossue Montes, Jingan Zhou, F. A. Ponce, Yuji Zhao	2020	6
8	Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics Applied Physics Letters ·Hanxiao Liu, Houqiang Fu, Kai Fu, Katharina Dimovski, Han Xiuli, Yuji Zhao, F. A. Ponce	2019	24
9	Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0.5In0.5P Journal of Applied Physics ·Han Xiuli, Hanxiao Liu, 李新琴, 睿为王, R. Jakomin, M. P. Pires, Richard R. King, P. L. Souza, F. A. Ponce	2019	2
10	Dopant profiling in p-i-n GaN structures using secondary electrons Journal of Applied Physics ·Katharina Dimovski, Houqiang Fu, Kai Fu, Hanxiao Liu, Yuji Zhao, F. A. Ponce	2019	18
11	Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes Applied Physics Letters ·Katharina Dimovski, Houqiang Fu, Kai Fu, Hanxiao Liu, Yuji Zhao, Martha R. McCartney, F. A. Ponce	2019	12
12	Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow Journal of Crystal Growth ·Shuo Wang, Xiaohang Li, Alec M. Fischer, Theeradetch Detchprohm, Russell D. Dupuis, F. A. Ponce	2017	14
13	Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition physica status solidi (b) ·Xiaohang Li, Shuo Wang, Hongen Xie, Csajagi Cs., Tsung‐Ting Kao, Md. Mahbub Satter, Shyh‐Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Alec M. Fischer, F. A. Ponce	2015	46
14	Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells Applied Physics Letters ·Xiaohang Li, Hongen Xie, F. A. Ponce, Jae‐Hyun Ryou, Theeradetch Detchprohm, Russell D. Dupuis	2015	26
15	A new exposure model to evaluate smoked illicit drugs in rodents: A study of crack cocaine Journal of Pharmacological and Toxicological Methods ·Isis Machado Hueza, F. A. Ponce, Raphael Caio Tamborelli Garcia, Tânia Marcourakis, Maurı́cio Yonamine, Sophie Govindaraju, Thiago Berti Kirsten	2015	6
16	Development for Ultraviolet Vertical Cavity Surface Emitting Lasers Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·O.B. Fryk, (unknown), 正雄前田, (unknown), (unknown), Theeradetch Detchprohm, (unknown), Hongen Xie, F. A. Ponce	2014	1
17	Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography Applied Physics Letters ·Martha R. McCartney, F. A. Ponce, Juan Cai, Dave Bour	2000	42
18	Hydrogen in crystalline semiconductors : a review of experimental results Physica B Condensed Matter ·N. M. Johnson, C. Doland, F. A. Ponce, J. Walker, Mykhailo Cherenkov	1991	61
19	High-resolution transmission electron microscopy of 60[ddot] dislocations in si-GaAs Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·Dagmar Gerthsen, F. A. Ponce, G. B. Anderson	1989	23
20	Ultra-high-vacuum, high-resolution Transmission Electron Microscopy at 400 kV Proceedings annual meeting Electron Microscopy Society of America ·F. A. Ponce, Seiichi Suzuki, Concita Daniela Spada, Y. Ishibashi, Yusuke Ishida, مريم بنت سلمي الروقي العتيـبي	1986	2

About F. A. Ponce

F. A. Ponce is a scholar working on Condensed Matter Physics, Structural Biology, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 360 papers that have together received 12.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (219 papers), Ga2O3 and related materials (97 papers), Semiconductor Quantum Structures and Devices (90 papers), Semiconductor materials and devices (90 papers), Metal and Thin Film Mechanics (80 papers), ZnO doping and properties (79 papers), Semiconductor materials and interfaces (26 papers) and Silicon and Solar Cell Technologies (26 papers). The work is most often cited by research in Condensed Matter Physics (8.2k citations), Electronic, Optical and Magnetic Materials (3.8k citations), Structural Biology (226 citations), Atomic and Molecular Physics, and Optics (4.0k citations) and Materials Chemistry (5.5k citations). F. A. Ponce has collaborated with scholars based in United States, Japan and United Kingdom. Frequent co-authors include D. P. Bour, M. G. Craford, D. A. Steigerwald, D. Cherns, S. D. Lester, D. K. Biegelsen, J. C. Tramontana, Alec M. Fischer, R. Liu and A. Bell. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, physica status solidi (b) and Applied Physics Express.

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