G. Cunge

1.9k total citations
50 papers, 1.5k citations indexed

About

G. Cunge is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Materials Chemistry. According to data from OpenAlex, G. Cunge has authored 50 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 16 papers in Mechanics of Materials and 16 papers in Materials Chemistry. Recurrent topics in G. Cunge's work include Plasma Diagnostics and Applications (36 papers), Semiconductor materials and devices (24 papers) and Metal and Thin Film Mechanics (13 papers). G. Cunge is often cited by papers focused on Plasma Diagnostics and Applications (36 papers), Semiconductor materials and devices (24 papers) and Metal and Thin Film Mechanics (13 papers). G. Cunge collaborates with scholars based in France, United States and Australia. G. Cunge's co-authors include Jean‐Paul Booth, N. Sadeghi, R. Ramos, O. Joubert, Pascal Chabert, D. Vempaire, B. Pelissier, M. Touzeau, M. Martin and L. Vallier and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

G. Cunge

48 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Cunge France 24 1.2k 561 514 256 215 50 1.5k
Lawrence Overzet United States 23 1.5k 1.2× 554 1.0× 456 0.9× 272 1.1× 306 1.4× 96 1.9k
Marc Böke Germany 21 947 0.8× 361 0.6× 464 0.9× 502 2.0× 224 1.0× 67 1.2k
D. Leonhardt United States 20 653 0.5× 244 0.4× 342 0.7× 125 0.5× 177 0.8× 48 957
F. Cramarossa Italy 20 1.1k 0.9× 699 1.2× 437 0.9× 369 1.4× 189 0.9× 56 1.6k
Nobuki Mutsukura Japan 20 518 0.4× 770 1.4× 503 1.0× 95 0.4× 121 0.6× 64 1.1k
Philippe Lefaucheux France 20 1.1k 0.9× 401 0.7× 286 0.6× 157 0.6× 116 0.5× 58 1.4k
Sebastian Engelmann United States 26 1.9k 1.5× 656 1.2× 356 0.7× 71 0.3× 298 1.4× 107 2.3k
Yolanda Aranda Gonzalvo United Kingdom 14 755 0.6× 490 0.9× 626 1.2× 412 1.6× 84 0.4× 23 1.1k
F. M. Dias Portugal 23 959 0.8× 551 1.0× 144 0.3× 704 2.8× 323 1.5× 69 1.5k
Ante Hećimović Germany 23 917 0.7× 712 1.3× 868 1.7× 237 0.9× 187 0.9× 52 1.4k

Countries citing papers authored by G. Cunge

Since Specialization
Citations

This map shows the geographic impact of G. Cunge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Cunge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Cunge more than expected).

Fields of papers citing papers by G. Cunge

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Cunge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Cunge. The network helps show where G. Cunge may publish in the future.

Co-authorship network of co-authors of G. Cunge

This figure shows the co-authorship network connecting the top 25 collaborators of G. Cunge. A scholar is included among the top collaborators of G. Cunge based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Cunge. G. Cunge is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Renault, O., et al.. (2016). XPS investigations of graphene surface cleaning using H 2 ‐ and Cl 2 ‐based inductively coupled plasma. Surface and Interface Analysis. 48(7). 451–455. 42 indexed citations
2.
Chevalier, Xavier, Paul Coupillaud, Guillaume Fleury, et al.. (2016). Design of new block copolymer systems to achieve thick films with defect-free structures for applications of DSA into lithographic large nodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9779. 977913–977913.
3.
Cunge, G., Camille Petit‐Etienne, Hanako Okuno, et al.. (2015). Dry efficient cleaning of poly-methyl-methacrylate residues from graphene with high-density H2 and H2-N2 plasmas. Journal of Applied Physics. 118(12). 71 indexed citations
4.
Salaün, Mathieu, et al.. (2014). Pulsed Transfer Etching of PS–PDMS Block Copolymers Self-Assembled in 193 nm Lithography Stacks. ACS Applied Materials & Interfaces. 6(18). 16276–16282. 32 indexed citations
5.
Darnon, Maxime, et al.. (2013). Characterization of silicon etching in synchronized pulsed plasma. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8685. 86850J–86850J. 2 indexed citations
6.
Ramos, R., et al.. (2013). Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment. Journal of Applied Physics. 113(1). 10 indexed citations
7.
Petit‐Etienne, Camille, Maxime Darnon, Marc Fouchier, et al.. (2012). Atomic-scale silicon etching control using pulsed Cl2 plasma. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(1). 20 indexed citations
8.
Gay, Guillaume, T. Baron, Billel Salhi, et al.. (2010). CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns. Nanotechnology. 21(43). 435301–435301. 29 indexed citations
9.
Ramos, R., G. Cunge, M. Touzeau, & N. Sadeghi. (2008). Measured velocity distribution of sputtered Al atoms perpendicular and parallel to the target. Journal of Physics D Applied Physics. 41(15). 152003–152003. 14 indexed citations
10.
Ramos, R., G. Cunge, B. Pelissier, & O. Joubert. (2007). Cleaning Aluminum Fluoride coatings from plasma reactor walls in SiCl4/Cl2 plasmas. HAL (Le Centre pour la Communication Scientifique Directe). 1 indexed citations
11.
Ramos, R., G. Cunge, & O. Joubert. (2007). On the interest of carbon-coated plasma reactor for advanced gate stack etching processes. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 25(2). 290–303. 18 indexed citations
12.
Joubert, O., et al.. (2007). Poly-Si∕TiN∕HfO2 gate stack etching in high-density plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(3). 767–778. 33 indexed citations
13.
Cunge, G., et al.. (2005). New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes. Plasma Sources Science and Technology. 14(3). 599–609. 87 indexed citations
14.
Vallier, L., J. Foucher, E. Pargon, et al.. (2003). Chemical topography analyses of silicon gates etched in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 high density plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(2). 904–911. 21 indexed citations
15.
Joubert, O., et al.. (2003). Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas. Microelectronic Engineering. 69(2-4). 350–357. 2 indexed citations
16.
Foucher, J., G. Cunge, L. Vallier, & O. Joubert. (2002). Silicon gate notching for patterning features with dimensions smaller than the resolution of the lithography. Microelectronic Engineering. 61-62. 849–857. 1 indexed citations
17.
Booth, Jean‐Paul, G. Cunge, Ludovic Biennier, D. Romanini, & A. Kachanov. (2000). Ultraviolet cavity ring-down spectroscopy of free radicals in etching plasmas. Chemical Physics Letters. 317(6). 631–636. 35 indexed citations
18.
Schwarzenbach, W., G. Cunge, & Jean‐Paul Booth. (1999). High mass positive ions and molecules in capacitively-coupled radio-frequency CF4 plasmas. Journal of Applied Physics. 85(11). 7562–7568. 41 indexed citations
19.
Booth, Jean‐Paul, G. Cunge, Pascal Chabert, & N. Sadeghi. (1999). CF x radical production and loss in a CF4 reactive ion etching plasma: Fluorine rich conditions. Journal of Applied Physics. 85(6). 3097–3107. 145 indexed citations
20.
Booth, Jean‐Paul, G. Cunge, N. Sadeghi, & Rod Boswell. (1997). The transition from symmetric to asymmetric discharges in pulsed 13.56 MHz capacitively coupled plasmas. Journal of Applied Physics. 82(2). 552–560. 51 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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