E. Bedel‐Pereira

620 citations

42 papers · 477 indexed · h-index 12

Co-authors: H. Carrère F. Cristiano Alexandre Arnoult V. Mortet A. Ricard Anton J. Bauer P. Pichler Isabelle Séguy
Topics: Semiconductor materials and devices (22 papers)Silicon Carbide Semiconductor Technologies (12 papers)Semiconductor Quantum Structures and Devices (10 papers)
Cited by: Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics, and Optics
Journals: Physical review. B, Condensed matter Applied Physics Letters Journal of Applied Physics
Partner nations: France Germany Czechia

In The Last Decade

E. Bedel‐Pereira

42 papers receiving 464 citations

Peers

Countries citing papers authored by E. Bedel‐Pereira

Since Specialization

Citations

This map shows the geographic impact of E. Bedel‐Pereira's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Bedel‐Pereira with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Bedel‐Pereira more than expected).

Fields of papers citing papers by E. Bedel‐Pereira

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Bedel‐Pereira. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Bedel‐Pereira. The network helps show where E. Bedel‐Pereira may publish in the future.

Co-authorship network of co-authors of E. Bedel‐Pereira

This figure shows the co-authorship network connecting the top 25 collaborators of E. Bedel‐Pereira. A scholar is included among the top collaborators of E. Bedel‐Pereira based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Bedel‐Pereira. E. Bedel‐Pereira is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Development of a lab-on-chip electrochemical biosensor for water quality analysis based on microalgal photosynthesis 2015 ·Biosensors and Bioelectronics ·(unknown),(unknown),Ludovic Salvagnac,(unknown),E. Bedel‐Pereira,Isabelle Séguy,Pierre Temple‐Boyer,Philippe Juneau,Ricardo Izquierdo,Jérôme Launay	58
2	Effect of plasma composition on nanocrystalline diamond layers deposited by a microwave linear antenna plasma‐enhanced chemical vapour deposition system 2015 ·physica status solidi (a) ·Andrew Taylor,Petr Ashcheulov,Martin Čada,Ladislav Fekete,Pavel Hubı́k,Ladislav Klimša,J. Olejníček,Z. Remeš,Ivan Jirka,Petr Janíček,E. Bedel‐Pereira,Jaromı́r Kopeček,Jan Mistrı́k,V. Mortet	15
3	Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs 2015 ·IEEE Transactions on Electron Devices ·(unknown),A. Burenkov,(unknown),Guillermo P. Ortiz,E. Bedel‐Pereira,V. Mortet,F. Cristiano,Anton J. Bauer,P. Pichler	59
4	Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect 2015 ·Applied Physics Letters ·Guillermo P. Ortiz,(unknown),(unknown),A. Burenkov,Anton J. Bauer,P. Pichler,F. Cristiano,E. Bedel‐Pereira,V. Mortet	29
5	Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs 2014 ·Materials science forum ·(unknown),(unknown),V. Mortet,Guillermo P. Ortiz,Tobias Erlbacher,A. Burenkov,Anton J. Bauer,F. Cristiano,E. Bedel‐Pereira,P. Pichler,H. Ryssel,L. Frey	3
6	Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs 2014 ·Materials science forum ·(unknown),(unknown),(unknown),V. Mortet,E. Bedel‐Pereira,F. Cristiano,Anton J. Bauer,P. Pichler	2
7	Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing 2014 ·Applied Physics Express ·Giuseppe Fisicaro,Lourdes Pelaz,Marı́a Aboy,Pedro López,M. Italia,Karim Huet,F. Cristiano,(unknown),(unknown),E. Bedel‐Pereira,M. Quillec,Antonino La Magna	11
8	AZO electrodes deposited by atomic layer deposition for OLED fabrication 2014 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown),Isabelle Séguy,(unknown),T. Camps,Yu‐Chang Lin,Jean‐Baptiste Doucet,(unknown),Ludovic Salvagnac,E. Bedel‐Pereira,(unknown),(unknown),Véronique Bardinal	4
9	Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect 2014 ·Materials science forum ·Guillermo P. Ortiz,V. Mortet,(unknown),(unknown),A. Burenkov,Anton J. Bauer,P. Pichler,F. Cristiano,E. Bedel‐Pereira	1
10	Characterization of n-channel MOSFETs: Electrical measurements and simulation analysis 2013 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·(unknown),(unknown),(unknown),V. Mortet,E. Bedel‐Pereira,J. Lorenz,P. Pichler	5
11	Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets 2013 ·Materials science forum ·(unknown),(unknown),(unknown),V. Mortet,E. Bedel‐Pereira,F. Cristiano,Anton J. Bauer,P. Pichler	7
12	Large boron‐interstitial cluster modelling in BF₃ plasma implanted silicon 2013 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown),F. Cristiano,(unknown),Yang Qiu,P. Boulenc,M. Quillec,(unknown),(unknown),E. Bedel‐Pereira,V. Mortet,(unknown),(unknown),Frank Torregrosa,C. Tavernier	2
13	Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs 2012 ·Materials science forum ·(unknown),Volker Haeublein,Tobias Erlbacher,(unknown),H. Ryssel,Ana M. Beltrán,Sylvie Schamm‐Chardon,V. Mortet,E. Bedel‐Pereira,(unknown),F. Cristiano	10
14	BF[sub 3] PIII modeling: Implantation, amorphisation and diffusion 2012 ·AIP conference proceedings ·(unknown),F. Cristiano,(unknown),P. Boulenc,Yang Qiu,M. Quillec,(unknown),(unknown),(unknown),E. Bedel‐Pereira,V. Mortet,Frank Torregrosa,C. Tavernier	2
15	Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements 2008 ·Materials Science and Engineering B ·(unknown),F. Cristiano,E. Bedel‐Pereira,W. Lerch,S. Paul,H. Kheyrandish	4
16	Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys 2005 ·Applied Physics Letters ·J. Plaza,(unknown),B.J. Garcı́a,H. Carrère,E. Bedel‐Pereira	28
17	単一量子ドット層における電子-音響フォノン相互作用音響ミラー効果と共振器効果 2004 ·Physical Review B ·M. Cazayous,J. Groenen,J. R. Huntzinger,E. Bedel‐Pereira,(unknown),H. Carrère,Nicolas Bertru,Cyril Paranthoën,Olivier Dehaese	24
18	Influence of radio frequency plasma cell conditions on the incorporation of nitrogen into GaAsN and GaInAsN 2004 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·H. Carrère,Alexandre Arnoult,E. Bedel‐Pereira,A. Ricard	14
19	Improved surface treatments for recycled (100) GaAs substrates in view of molecular-beam epitaxy growth: Auger electron spectroscopy, Raman, and secondary ion mass spectrometry analyses 2002 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown),E. Bedel‐Pereira	1
20	Precise growth of high uniformity vertical cavity devices using tunable dynamic optical reflectometry 1999 ·Journal of Crystal Growth ·Frédéric van Dijk,Véronique Bardinal,C. Fontaine,E. Bedel‐Pereira,A. Muñoz-Yagüe	5

About E. Bedel‐Pereira

E. Bedel‐Pereira is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, having authored 42 papers that have together received 477 indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Semiconductor Quantum Structures and Devices (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (371 citations), Condensed Matter Physics (73 citations) and Atomic and Molecular Physics, and Optics (153 citations). E. Bedel‐Pereira has collaborated with scholars based in France, Germany and Czechia. Frequent co-authors include H. Carrère, F. Cristiano, Alexandre Arnoult, V. Mortet, A. Ricard, Anton J. Bauer, P. Pichler, Isabelle Séguy, A. Burenkov and Guillermo P. Ortiz. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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