J. D. Grange

484 total citations
15 papers, 399 citations indexed

About

J. D. Grange is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. D. Grange has authored 15 papers receiving a total of 399 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in J. D. Grange's work include Semiconductor materials and interfaces (7 papers), Semiconductor Quantum Structures and Devices (6 papers) and Semiconductor materials and devices (6 papers). J. D. Grange is often cited by papers focused on Semiconductor materials and interfaces (7 papers), Semiconductor Quantum Structures and Devices (6 papers) and Semiconductor materials and devices (6 papers). J. D. Grange collaborates with scholars based in United Kingdom, United States and Canada. J. D. Grange's co-authors include Charles R. Kurkjian, J.L. Markham, E. H. C. Parker, R King, K.G. Stephens, B.J. Sealy, Mark G. Kuzyk, Kenneth D. Singer, B. T. Meggitt and J. E. Simsarian and has published in prestigious journals such as Journal of Applied Physics, Langmuir and Journal of Physics D Applied Physics.

In The Last Decade

J. D. Grange

14 papers receiving 379 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. D. Grange United Kingdom 9 296 168 99 88 76 15 399
Fengqiu Fan Japan 7 214 0.7× 107 0.6× 131 1.3× 103 1.2× 78 1.0× 11 367
Paul Frank Austria 10 314 1.1× 166 1.0× 103 1.0× 201 2.3× 22 0.3× 11 441
Mingshaw Wu United States 6 141 0.5× 198 1.2× 82 0.8× 217 2.5× 50 0.7× 9 434
T. Bitzer United Kingdom 15 400 1.4× 266 1.6× 135 1.4× 271 3.1× 47 0.6× 25 508
S.A. Campbell United States 14 576 1.9× 131 0.8× 85 0.9× 262 3.0× 27 0.4× 31 661
Jianshu Yang China 14 259 0.9× 302 1.8× 80 0.8× 227 2.6× 17 0.2× 27 505
Klaus Weishaupt Germany 9 95 0.3× 110 0.7× 114 1.2× 87 1.0× 24 0.3× 25 308
S. Zangooie Sweden 16 384 1.3× 98 0.6× 298 3.0× 427 4.9× 56 0.7× 37 595
Yunshen Zhou China 8 153 0.5× 82 0.5× 135 1.4× 232 2.6× 20 0.3× 19 363
M. Leibovitch Israel 15 423 1.4× 268 1.6× 53 0.5× 276 3.1× 30 0.4× 32 554

Countries citing papers authored by J. D. Grange

Since Specialization
Citations

This map shows the geographic impact of J. D. Grange's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. D. Grange with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. D. Grange more than expected).

Fields of papers citing papers by J. D. Grange

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. D. Grange. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. D. Grange. The network helps show where J. D. Grange may publish in the future.

Co-authorship network of co-authors of J. D. Grange

This figure shows the co-authorship network connecting the top 25 collaborators of J. D. Grange. A scholar is included among the top collaborators of J. D. Grange based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. D. Grange. J. D. Grange is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Gripp, J., D. Stiliadis, J. E. Simsarian, et al.. (2006). IRIS optical packet router [Invited]. Journal of Optical Networking. 5(8). 589–589. 20 indexed citations
2.
Grange, J. D., J.L. Markham, & Charles R. Kurkjian. (1993). Effects of surface hydration on the deposition of silane monolayers on silica. Langmuir. 9(7). 1749–1753. 233 indexed citations
3.
Grange, J. D., Mark G. Kuzyk, & Kenneth D. Singer. (1987). Effects of Order on Nonlinear Optical Processes in Organic Molecular Materials. Molecular Crystals and Liquid Crystals Incorporating Nonlinear Optics. 150(1). 567–605. 19 indexed citations
4.
Kerr, T. M., et al.. (1985). Summary Abstract: The growth and doping of GaAsySb1−y by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(2). 535–535. 8 indexed citations
5.
Grange, J. D., et al.. (1985). Annealing of zinc-implanted GaAs. Journal of Applied Physics. 57(12). 5470–5476. 24 indexed citations
6.
Grange, J. D., et al.. (1984). Optical Furnace Annealing. MRS Proceedings. 35. 5 indexed citations
7.
Grange, J. D., et al.. (1984). Annealing of selenium-implanted GaAs. Journal of Applied Physics. 56(12). 3503–3507. 18 indexed citations
8.
Grange, J. D., et al.. (1984). Shallow ion implantation in gallium arsenide. Vacuum. 34(1-2). 199–201. 1 indexed citations
9.
Grange, J. D., et al.. (1984). Plasma enhanced deposition of ‘silicon nitride’ for use as an encapsulant for silicon ion-implanted gallium arsenide. Vacuum. 34(1-2). 315–320. 12 indexed citations
10.
Grange, J. D., et al.. (1983). An examination of the reactive sputtering of silicon nitride on to gallium arsenide. Vacuum. 33(7). 407–410. 1 indexed citations
11.
Grange, J. D., et al.. (1983). Capless annealing of silicon implanted gallium arsenide. Solid-State Electronics. 26(4). 313–317. 12 indexed citations
12.
Grange, J. D.. (1982). System related impurity incorporation during the growth of gallium arsenide by molecular beam epitaxy. Vacuum. 32(8). 477–480. 2 indexed citations
13.
Parker, E. H. C., R. A. A. Kubiak, R King, & J. D. Grange. (1981). An investigation into silicon doping of MBE (100) GaAs. Journal of Physics D Applied Physics. 14(10). 1853–1865. 5 indexed citations
14.
Meggitt, B. T., E. H. C. Parker, R King, & J. D. Grange. (1980). Electrical and structural properties of InAs layers on (100) GaAs substrates prepared by molecular beam deposition. Journal of Crystal Growth. 50(2). 538–548. 20 indexed citations
15.
Grange, J. D., E. H. C. Parker, & R King. (1979). Relationship of MBE growth parameters with the electrical properties of thin (100) InAs epilayers. Journal of Physics D Applied Physics. 12(9). 1601–1612. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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