Fabrice Oehler

2.3k citations

99 papers · 1.9k indexed · h-index 25

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 40
- GaN-based semiconductor devices and materials 40
Atomic and Molecular Physics, and Optics 40
- Semiconductor Quantum Structures and Devices 20
- Semiconductor materials and interfaces 15

Co-authors: P. Gentile C. J. Humphreys Rachel A. Oliver Jean‐Christophe Harmand Menno J. Kappers Frank Glas T. Baron P. Ferret
Journals: Journal of Applied Physics (13 papers)Nanotechnology (12 papers)Applied Physics Letters (11 papers)Nano Letters (9 papers)Physical review. B. (8 papers)
Partner nations: France United Kingdom Germany

In The Last Decade

Fabrice Oehler

98 papers receiving 1.8k citations

Peers

Countries citing papers authored by Fabrice Oehler

Since Specialization

Citations

This map shows the geographic impact of Fabrice Oehler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fabrice Oehler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fabrice Oehler more than expected).

Fields of papers citing papers by Fabrice Oehler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fabrice Oehler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fabrice Oehler. The network helps show where Fabrice Oehler may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Fabrice Oehler, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Fabrice Oehler Line = papers co-authored together Fabrice Oehler links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Mapping of Vibrational Modes Revealing a Strong and Tunable Coupling in Two Juxtaposed 3R-WSe₂ Nanodrums Nano Letters ·田内敏昭, Varnhagen von Ense, Fabrice Oehler, Abdelkarim Ouerghi, Julien Chaste	2024	1
2	Stacking order and electronic band structure in MBE-grown trilayer WSe2 films Physical review. B. ·Sakiko Kosugi, 燕姫李, Nur Aimi Jani, Fabrice Oehler, Pavel Dudin, Jonathan Randolph Brown, G. Patriarche, Julien Chaste, Fausto Sirotti, X. Wallart, J. Ávila, Abdelkarim Ouerghi	2024	3
3	Van der Waals epitaxial growth of few layers WSe₂ on GaP(111)_B 2D Materials ·Nur Aimi Jani, Sakiko Kosugi, Christophe Coinon, Marten Tamo Ama, D. Vignaud, G. Patriarche, Pascal Roussel, Abdelkarim Ouerghi, Fabrice Oehler, X. Wallart	2024	2
4	Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride Physical review. B. ·燕姫李, Sakiko Kosugi, Jonathan Randolph Brown, Jean‐Christophe Girard, Yannick J. Dappe, F. Bertran, Marco Pala, Julien Chaste, Fabrice Oehler, Abdelkarim Ouerghi	2024	1
5	Distinguishing different stackings in WSe2 bilayers grown using chemical vapor deposition Physical review. B. ·Sakiko Kosugi, 燕姫李, Jonathan Randolph Brown, Marco Pala, Aboubakar Moustapha, Thibault Brulé, Julien Chaste, Fabrice Oehler, Abdelkarim Ouerghi	2024	1
6	Direct Reconstruction of the Band Diagram of Rhombohedral-Stacked Bilayer WSe₂–Graphene Heterostructure via Photoemission Electron Microscopy ACS Applied Electronic Materials ·Mohamed Boutchich, Keiki Fukumoto, Sakiko Kosugi, J. Stochaj, José Alvarez, David Alamarguy, Елена Доманова, Fabrice Oehler, Abdelkarim Ouerghi	2024	2
7	Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride Physical Review Research ·燕姫李, Sakiko Kosugi, Anthony H. Green, Julien Chaste, César González, Yannick J. Dappe, F. Bertran, Patrick Le Fèvre, Marco Pala, Fabrice Oehler, Jean‐Christophe Girard, Abdelkarim Ouerghi	2023	4
8	Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition Physical review. B. ·Sakiko Kosugi, 燕姫李, 田内敏昭, Ichiro Tochikawa, Catherine T. Basinillo, Anthony H. Green, Pavel Dudin, J. Ávila, Mathieu G. Silly, Vincent Derycke, Jonathan Randolph Brown, Marco Pala, Iann C. Gerber, Julien Chaste, Fabrice Oehler, Abdelkarim Ouerghi	2023	10
9	Unidirectional Rashba spin splitting in single layer WS_2(1−x)Se_2x alloy Nanotechnology ·博西秀, Debora Pierucci, F. Bisti, Biyuan Zheng, J. Ávila, Lama Khalil, marjan akbarpour, Julien Chaste, Fabrice Oehler, Marco Pala, Thomas Maroutian, Ilka Hermes, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi	2022	6
10	Hybridization and localized flat band in the WSe₂/MoSe₂ heterobilayer Nanotechnology ·Lama Khalil, Debora Pierucci, Emilio Vélez-Fort, J. Ávila, Céline Vergnaud, Pavel Dudin, Fabrice Oehler, Julien Chaste, Matthieu Jamet, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi	2022	6
11	Dynamics of Droplet Consumption in Vapor–Liquid–Solid III–V Nanowire Growth Crystal Growth & Design ·D. Macarthur, Frank Glas, G. Patriarche, Andréa Cattoni, Jean‐Christophe Harmand, Fabrice Oehler	2021	13
12	Electronic band gap of van der Waals α-As2Te3 crystals Applied Physics Letters ·Lama Khalil, Jean‐Christophe Girard, Debora Pierucci, F. Bisti, Julien Chaste, Fabrice Oehler, Charlie Gréboval, Elisabetta Perissinotto, Jean‐François Dayen, Demetrio Logoteta, G. Patriarche, Julien Rault, Marco Pala, Emmanuel Lhuillier, Abdelkarim Ouerghi	2021	7
13	Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires Applied Physics Letters ·均平邱, V. Hájek, Andréa Cattoni, Fabrice Oehler, Fabien Bayle, Stéphane Collin, Laurent Travers, A. V. Babichev, F. H. Julien, Jean‐Christophe Harmand, Maria Tchernycheva	2020	4
14	Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications Nanotechnology ·均平邱, V. Hájek, Valerio Piazza, Fabien Bayle, Andréa Cattoni, Fabrice Oehler, G. Patriarche, Laurent Travers, Stéphane Collin, F. H. Julien, Jean‐Christophe Harmand, Maria Tchernycheva	2019	11
15	Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization Thin Solid Films ·Tero Meuronen, G. Patriarche, Ludovic Largeau, O. Mauguin, Laurent Travers, François Brisset, Frank Glas, Fabrice Oehler	2019	3
16	Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires Nanotechnology ·V. Hájek, Stéphane Collin, O. Bernhardt, G. Patriarche, Fabrice Oehler, Laurent Travers, 均平邱, F. H. Julien, Jean‐Christophe Harmand, Maria Tchernycheva	2019	6
17	Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays Nano Letters ·Fabrice Oehler, Andréa Cattoni, Andrea Scaccabarozzi, G. Patriarche, Frank Glas, Jean‐Christophe Harmand	2017	53
18	Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma Surface and Coatings Technology ·Tero Meuronen, O. Mauguin, Ludovic Largeau, François Brisset, Frank Glas, Fabrice Oehler	2017	3
19	Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence Nano Letters ·O. Bernhardt, V. Hájek, Andrea Scaccabarozzi, Pierre Râle, Fabrice Oehler, A. Lemaı̂tre, Laurent Lombez, Jean‐François Guillemoles, Maria Tchernycheva, Jean‐Christophe Harmand, Andréa Cattoni, Stéphane Collin	2017	25
20	Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method APL Materials ·James T. Griffiths, Tongtong Zhu, Fabrice Oehler, 马戎戎, Wai Yuen Fu, Jerzego Holzera, Robert A. Taylor, M. J. Kappers, C. J. Humphreys, Rachel A. Oliver	2014	16

About Fabrice Oehler

Fabrice Oehler is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 99 papers that have together received 1.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (40 papers), Nanowire Synthesis and Applications (30 papers), Metal and Thin Film Mechanics (22 papers), Semiconductor materials and devices (22 papers), 2D Materials and Applications (20 papers), Semiconductor Quantum Structures and Devices (20 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and interfaces (15 papers). The work is most often cited by research in Condensed Matter Physics (755 citations), Electronic, Optical and Magnetic Materials (444 citations), Atomic and Molecular Physics, and Optics (681 citations), Biomedical Engineering (895 citations) and Materials Chemistry (900 citations). Fabrice Oehler has collaborated with scholars based in France, United Kingdom and Germany. Frequent co-authors include P. Gentile, C. J. Humphreys, Rachel A. Oliver, Jean‐Christophe Harmand, Menno J. Kappers, Frank Glas, T. Baron, P. Ferret, G. Patriarche and M. den Hertog. Their work appears in journals such as Journal of Applied Physics, Nanotechnology, Applied Physics Letters, Nano Letters and Physical review. B..

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