Hee‐Sung Kang

685 total citations
37 papers, 585 citations indexed

About

Hee‐Sung Kang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hee‐Sung Kang has authored 37 papers receiving a total of 585 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 26 papers in Condensed Matter Physics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hee‐Sung Kang's work include Semiconductor materials and devices (29 papers), GaN-based semiconductor devices and materials (26 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). Hee‐Sung Kang is often cited by papers focused on Semiconductor materials and devices (29 papers), GaN-based semiconductor devices and materials (26 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). Hee‐Sung Kang collaborates with scholars based in South Korea, France and India. Hee‐Sung Kang's co-authors include Jung‐Hee Lee, Dong‐Seok Kim, Ki‐Sik Im, Ki-Won Kim, Jong‐Bong Ha, Jaejoon Oh, Jaikwang Shin, M. Siva Pratap Reddy, In Man Kang and Chul‐Ho Won and has published in prestigious journals such as Journal of Physics D Applied Physics, Thin Solid Films and Journal of Applied Polymer Science.

In The Last Decade

Hee‐Sung Kang

37 papers receiving 564 citations

Peers

Hee‐Sung Kang

EEE

CMP

EOMM

AMPO

Hsiang-Chun Wang Taiwan

Marcin Miczek Japan

Zhongda Li United States

Jong‐Bong Ha South Korea

Toshiya Tabuchi Japan

Sameer Joglekar United States

David A. Deen United States

Yiqiang Ni China

Jiacheng Lei Hong Kong

P. Javorka Germany

Hsiang-Chun Wang Taiwan

Hee‐Sung Kang

372 ×0.8

EEE

356 ×0.8

CMP

232 ×0.9

EOMM

89 ×0.7

AMPO

145 ×1.3

Citations per year, relative to Hee‐Sung Kang Hee‐Sung Kang (= 1×) peers Hsiang-Chun Wang

Countries citing papers authored by Hee‐Sung Kang

Since Specialization

Citations

This map shows the geographic impact of Hee‐Sung Kang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hee‐Sung Kang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hee‐Sung Kang more than expected).

Fields of papers citing papers by Hee‐Sung Kang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hee‐Sung Kang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hee‐Sung Kang. The network helps show where Hee‐Sung Kang may publish in the future.

Co-authorship network of co-authors of Hee‐Sung Kang

This figure shows the co-authorship network connecting the top 25 collaborators of Hee‐Sung Kang. A scholar is included among the top collaborators of Hee‐Sung Kang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hee‐Sung Kang. Hee‐Sung Kang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Lee, J.‐H., Jeong-Gil Kim, Hee‐Sung Kang, & Jung‐Hee Lee. (2021). Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer. Solid-State Electronics. 178. 107984–107984. 2 indexed citations

Lee, Dong‐Gi, Young‐Woo Jo, Dong-Hyeok Son, et al.. (2016). Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor. Journal of Nanoscience and Nanotechnology. 16(5). 5049–5052. 5 indexed citations

Im, Ki‐Sik, Hee‐Sung Kang, Yohan Park, et al.. (2016). Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel. Solid-State Electronics. 120. 47–51. 12 indexed citations

Yoon, Young Jun, Jae Hwa Seo, Hee‐Sung Kang, et al.. (2016). TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs. Solid-State Electronics. 124. 54–57. 26 indexed citations

Kang, Hee‐Sung, Chul‐Ho Won, Youngjo Kim, et al.. (2015). Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐ doped GaN/undoped GaN multi‐layered buffer structure. physica status solidi (a). 212(5). 1116–1121. 33 indexed citations

Jo, Young‐Woo, Dong‐Seok Kim, Hee‐Sung Kang, et al.. (2014). Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator. Solid-State Electronics. 100. 11–14. 12 indexed citations

Im, Ki‐Sik, et al.. (2014). Characteristics of GaN and AlGaN/GaN FinFETs. Solid-State Electronics. 97. 66–75. 32 indexed citations

Reddy, M. Siva Pratap, et al.. (2013). Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface. Journal of Applied Polymer Science. 131(2). 33 indexed citations

Kang, Hee‐Sung, et al.. (2013). Normally-off GaN MOSFETs on insulating substrate. Solid-State Electronics. 90. 79–85. 13 indexed citations

10.

Kang, Hee‐Sung, M. Siva Pratap Reddy, Dong‐Seok Kim, et al.. (2013). Effect of oxygen species on the positive flat-band voltage shift in Al₂O₃/GaN metal–insulator–semiconductor capacitors with post-deposition annealing. Journal of Physics D Applied Physics. 46(15). 155101–155101. 56 indexed citations

11.

Reddy, M. Siva Pratap, Hee‐Sung Kang, Dong‐Seok Kim, et al.. (2012). Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-InP Schottky structures. 69–72. 1 indexed citations

12.

Kim, Dong‐Seok, Tae‐Hyeon Kim, Chul‐Ho Won, et al.. (2011). Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method. Microelectronic Engineering. 88(7). 1221–1224. 6 indexed citations

13.

Kim, Dong‐Seok, Ki-Won Kim, Ki‐Sik Im, et al.. (2011). High Performance in a Normally-off Al2O3/GaN MOSFET Based on an AlGaN/GaN Heterostructure with a p-GaN Buffer Layer. Journal of the Korean Physical Society. 58(5(2)). 1500–1504. 12 indexed citations

14.

Kim, Ki-Won, Dong‐Seok Kim, Hee‐Sung Kang, et al.. (2011). Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET. IEEE Electron Device Letters. 32(10). 1376–1378. 151 indexed citations

15.

Kim, Dong‐Seok, Jong‐Bong Ha, Hee‐Sung Kang, et al.. (2010). Normally-off operation of Al 2 O 3 /GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer. 229–231. 1 indexed citations

16.

Ha, Jong‐Bong, Dong‐Seok Kim, Ki‐Sik Im, et al.. (2010). Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al₂O₃/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing. Japanese Journal of Applied Physics. 49(12R). 126501–126501. 1 indexed citations

17.

Ha, Jong‐Bong, et al.. (2010). Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique. IEEE Electron Device Letters. 31(8). 848–850. 8 indexed citations

18.

Hong, Seung-Ho, Min Sang Park, Hee‐Sung Kang, & Yoon‐Ha Jeong. (2006). RF characteristics in a multi-finger structure for 70-nm CMOS devices at low temperature. 312–313. 1 indexed citations

19.

Baek, Rock‐Hyun, et al.. (2006). I-V modeling for nanoscale n-MOSFET from liquid-nitrogen temperature to room temperature. 316–317. 1 indexed citations

20.

Kang, Hee‐Sung, et al.. (2004). Fully working 1.10 /spl mu/m/sup 2/ embedded 6T-SRAM technology with high-k gate dielectric device for ultra low power applications. 38–39. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact