Young‐Woo Jo

567 total citations
27 papers, 464 citations indexed

About

Young‐Woo Jo is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Young‐Woo Jo has authored 27 papers receiving a total of 464 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Young‐Woo Jo's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Young‐Woo Jo is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (14 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Young‐Woo Jo collaborates with scholars based in South Korea, France and India. Young‐Woo Jo's co-authors include Jung‐Hee Lee, Ki‐Sik Im, Chul‐Ho Won, Dong-Hyeok Son, Jaehoon Lee, In Man Kang, Jae Hwa Seo, S. Cristoloveanu, Maryline Bawedin and S. Cristoloveanu and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Journal of Molecular Liquids.

In The Last Decade

Young‐Woo Jo

27 papers receiving 446 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Young‐Woo Jo South Korea 12 387 368 158 78 45 27 464
Joachim Wuerfl Germany 10 379 1.0× 370 1.0× 158 1.0× 72 0.9× 31 0.7× 23 466
Joshua Perozek United States 8 243 0.6× 306 0.8× 158 1.0× 101 1.3× 18 0.4× 13 355
Towhidur Razzak United States 12 293 0.8× 344 0.9× 217 1.4× 92 1.2× 23 0.5× 22 403
Nelson Braga United States 9 354 0.9× 386 1.0× 180 1.1× 88 1.1× 26 0.6× 19 459
Hareesh Chandrasekar India 14 269 0.7× 289 0.8× 159 1.0× 169 2.2× 52 1.2× 33 416
Manyam Pilla United States 9 291 0.8× 337 0.9× 166 1.1× 58 0.7× 26 0.6× 10 384
Nitin Goyal Norway 8 194 0.5× 260 0.7× 121 0.8× 85 1.1× 35 0.8× 14 314
Tomohiro Nozawa Japan 5 334 0.9× 331 0.9× 214 1.4× 156 2.0× 32 0.7× 5 457
Rimma Zhytnytska Germany 10 333 0.9× 394 1.1× 177 1.1× 55 0.7× 16 0.4× 18 416
Stefan Moench Germany 12 292 0.8× 266 0.7× 65 0.4× 40 0.5× 31 0.7× 38 347

Countries citing papers authored by Young‐Woo Jo

Since Specialization
Citations

This map shows the geographic impact of Young‐Woo Jo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Young‐Woo Jo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Young‐Woo Jo more than expected).

Fields of papers citing papers by Young‐Woo Jo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Young‐Woo Jo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Young‐Woo Jo. The network helps show where Young‐Woo Jo may publish in the future.

Co-authorship network of co-authors of Young‐Woo Jo

This figure shows the co-authorship network connecting the top 25 collaborators of Young‐Woo Jo. A scholar is included among the top collaborators of Young‐Woo Jo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Young‐Woo Jo. Young‐Woo Jo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jo, Young‐Woo, et al.. (2025). Coupled analysis of nanofin effect and thermofluidic characteristics during flows of functionalized MWCNTs nanofluids with colloidal stability. Journal of Molecular Liquids. 433. 127790–127790. 1 indexed citations
2.
Jo, Young‐Woo, et al.. (2018). A 3.2-GHz Supply Noise-Insensitive PLL Using a Gate-Voltage-Boosted Source-Follower Regulator and Residual Noise Cancellation. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26(10). 2170–2174. 7 indexed citations
3.
Son, Dong-Hyeok, Young‐Woo Jo, Chul‐Ho Won, et al.. (2017). Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching. Solid-State Electronics. 141. 7–12. 8 indexed citations
4.
Jo, Young‐Woo, Dong-Hyeok Son, Chul‐Ho Won, & Jung‐Hee Lee. (2016). Normally-Off AlGaN/GaN-based MOSHEMT by Using One-Step TMAH Wet Etching. 대한전자공학회 학술대회. 945–949. 1 indexed citations
5.
Lee, Dong‐Gi, Young‐Woo Jo, Dong-Hyeok Son, et al.. (2016). Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor. Journal of Nanoscience and Nanotechnology. 16(5). 5049–5052. 5 indexed citations
6.
Im, Ki‐Sik, Chul‐Ho Won, Dong-Hyeok Son, et al.. (2016). Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer. Journal of Crystal Growth. 441. 41–45. 22 indexed citations
7.
Seo, Jae Hwa, Young Jun Yoon, Young‐Woo Jo, et al.. (2016). Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET). Journal of Nanoscience and Nanotechnology. 16(10). 10199–10203. 3 indexed citations
8.
9.
Kim, Jeong-Gil, Chul‐Ho Won, Young‐Woo Jo, et al.. (2015). Growth of AlN/GaN HEMT structure Using Indium-surfactant. JSTS Journal of Semiconductor Technology and Science. 15(5). 490–496. 1 indexed citations
10.
Jo, Young‐Woo, Dong-Hyeok Son, Chul‐Ho Won, et al.. (2015). AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch. IEEE Electron Device Letters. 36(10). 1008–1010. 58 indexed citations
11.
12.
Son, Dong-Hyeok, Young‐Woo Jo, Ki‐Sik Im, et al.. (2015). Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET. Microelectronic Engineering. 147. 155–158. 18 indexed citations
13.
14.
Jo, Young‐Woo, Dong-Hyeok Son, Chul‐Ho Won, et al.. (2015). Control of transconductance in high performance AlGaN/GaN FinFETs. 684–686. 7 indexed citations
15.
Jo, Young‐Woo, Dong-Hyeok Son, Dong‐Gi Lee, et al.. (2015). First demonstration of GaN-based vertical nanowire FET with top-down approach. 35–36. 17 indexed citations
16.
Jo, Young‐Woo, Dong‐Seok Kim, Hee‐Sung Kang, et al.. (2014). Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator. Solid-State Electronics. 100. 11–14. 12 indexed citations
17.
Seo, Jae Hwa, Young Jun Yoon, Young‐Woo Jo, et al.. (2014). Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT).. PubMed. 14(11). 8130–5. 3 indexed citations
18.
Im, Ki‐Sik, Chul‐Ho Won, Young‐Woo Jo, et al.. (2013). High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure. IEEE Transactions on Electron Devices. 60(10). 3012–3018. 90 indexed citations
19.
Im, Ki‐Sik, Young‐Woo Jo, Jaehoon Lee, S. Cristoloveanu, & Jung‐Hee Lee. (2013). Heterojunction-Free GaN Nanochannel FinFETs With High Performance. IEEE Electron Device Letters. 34(3). 381–383. 56 indexed citations
20.
Reddy, M. Siva Pratap, Hee‐Sung Kang, Dong‐Seok Kim, et al.. (2012). Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-InP Schottky structures. 69–72. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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