Yaozong Zhong

931 total citations
35 papers, 707 citations indexed

About

Yaozong Zhong is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yaozong Zhong has authored 35 papers receiving a total of 707 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 27 papers in Electrical and Electronic Engineering and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yaozong Zhong's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (22 papers) and Ga2O3 and related materials (21 papers). Yaozong Zhong is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (22 papers) and Ga2O3 and related materials (21 papers). Yaozong Zhong collaborates with scholars based in China and Türkiye. Yaozong Zhong's co-authors include Qian Sun, Yu Zhou, Hui Yang, Hongwei Gao, Jianxun Liu, Xiaolu Guo, Junlei He, S. S. Su, Meixin Feng and Xin Chen and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and ACS Applied Materials & Interfaces.

In The Last Decade

Yaozong Zhong

32 papers receiving 679 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yaozong Zhong China 17 640 484 350 168 125 35 707
Masakazu Kanechika Japan 16 781 1.2× 766 1.6× 352 1.0× 175 1.0× 149 1.2× 39 948
Brian L. Swenson United States 14 885 1.4× 719 1.5× 483 1.4× 220 1.3× 193 1.5× 24 998
Matthew Charles France 13 414 0.6× 396 0.8× 161 0.5× 137 0.8× 113 0.9× 87 547
Idriss Abid France 8 484 0.8× 388 0.8× 201 0.6× 132 0.8× 112 0.9× 11 554
Brendan Gunning United States 17 569 0.9× 366 0.8× 245 0.7× 215 1.3× 197 1.6× 47 684
An-Jye Tzou Taiwan 14 394 0.6× 335 0.7× 179 0.5× 246 1.5× 123 1.0× 32 571
Sadahiro Kato Japan 11 925 1.4× 763 1.6× 497 1.4× 210 1.3× 120 1.0× 25 1.0k
Cory Lund United States 15 619 1.0× 398 0.8× 276 0.8× 195 1.2× 181 1.4× 31 698
Marcello Cioni Italy 8 473 0.7× 423 0.9× 151 0.4× 90 0.5× 155 1.2× 27 553
Hiroshi Kambayashi Japan 15 920 1.4× 797 1.6× 500 1.4× 190 1.1× 109 0.9× 34 1.0k

Countries citing papers authored by Yaozong Zhong

Since Specialization
Citations

This map shows the geographic impact of Yaozong Zhong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yaozong Zhong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yaozong Zhong more than expected).

Fields of papers citing papers by Yaozong Zhong

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yaozong Zhong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yaozong Zhong. The network helps show where Yaozong Zhong may publish in the future.

Co-authorship network of co-authors of Yaozong Zhong

This figure shows the co-authorship network connecting the top 25 collaborators of Yaozong Zhong. A scholar is included among the top collaborators of Yaozong Zhong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yaozong Zhong. Yaozong Zhong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Feng, Meixin, Yaozong Zhong, Xin Chen, et al.. (2025). Photoresponsivity of p-GaN HEMT-based ultraviolet photodetectors at low temperatures. Applied Physics Letters. 126(19).
2.
Yang, Xinlu, Yu Zhou, Quan Li, et al.. (2025). AlGaN/GaN-based multi-channel epitaxial structure with an ultra-low 2DEG density and superior carrier transport performance. Applied Physics Express. 18(4). 44002–44002. 1 indexed citations
3.
Gao, Hongwei, Yaozong Zhong, Xiaolu Guo, et al.. (2025). Effective removal of Si contamination at the GaN regrowth interface through in-situ etching. Applied Surface Science. 695. 162905–162905.
4.
Li, Fangqing, Xin Chen, Yaozong Zhong, et al.. (2024). A Novel GaN Gate Driver: Transistor-Intrinsic Integration Exploiting Non-Ideal Characteristics by Device-Circuit Co-Design. 1–4. 1 indexed citations
5.
Gao, Hongwei, Xin Chen, Yaozong Zhong, et al.. (2024). Enhanced Gate Reliability of Ohmic-Like p-GaN Gate HEMT With a Built-in Reverse Diode. IEEE Transactions on Electron Devices. 71(4). 2355–2360. 3 indexed citations
6.
Zhou, Yu, Yaozong Zhong, Jianxun Liu, et al.. (2024). Degradation mechanism of degenerate n-GaN ohmic contact induced by ion beam etching damage. Applied Physics Express. 17(9). 96501–96501.
7.
Zhou, Yu, Jianxun Liu, Yaozong Zhong, et al.. (2023). GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base. IEEE Transactions on Electron Devices. 70(4). 1613–1621. 4 indexed citations
8.
Feng, Meixin, Yaozong Zhong, Xin Chen, et al.. (2023). Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors. ACS Photonics. 11(1). 180–186. 20 indexed citations
9.
Chen, Xin, Yaozong Zhong, Xiaolu Guo, et al.. (2023). Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer. Journal of Physics D Applied Physics. 56(35). 355101–355101. 6 indexed citations
10.
Jin, Hao, Sen Huang, Qimeng Jiang, et al.. (2023). High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric. Journal of Semiconductors. 44(10). 102801–102801. 2 indexed citations
11.
Liu, Jianxun, Yu Zhou, Xiujian Sun, et al.. (2022). Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process. Applied Physics Express. 15(7). 75501–75501. 5 indexed citations
12.
Jin, Hao, Qimeng Jiang, Sen Huang, et al.. (2022). An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage. IEEE Electron Device Letters. 43(8). 1191–1194. 41 indexed citations
13.
Guo, Xiaolu, Yaozong Zhong, Yu Zhou, et al.. (2022). 1200-V GaN-on-Si Quasi-Vertical p-n Diodes. IEEE Electron Device Letters. 43(12). 2057–2060. 17 indexed citations
14.
Guo, Xiaolu, Yaozong Zhong, Yu Zhou, et al.. (2021). Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2. IEEE Transactions on Electron Devices. 68(11). 5682–5686. 29 indexed citations
15.
Guo, Xiaolu, Yaozong Zhong, Junlei He, et al.. (2021). High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination. IEEE Electron Device Letters. 42(4). 473–476. 49 indexed citations
16.
Guo, Xiaolu, Yaozong Zhong, Xin Chen, et al.. (2021). Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination. Applied Physics Letters. 118(24). 44 indexed citations
17.
Zhong, Yaozong, Jinwei Zhang, Shan Wu, et al.. (2021). A review on the GaN-on-Si power electronic devices. Fundamental Research. 2(3). 462–475. 101 indexed citations
18.
Chen, Xin, Yaozong Zhong, Xiaolu Guo, et al.. (2021). Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate. Applied Physics Express. 14(10). 104005–104005. 5 indexed citations
19.
Zhong, Yaozong, S. S. Su, Xin Chen, et al.. (2020). Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate. IEEE Journal of Emerging and Selected Topics in Power Electronics. 9(3). 3715–3724. 17 indexed citations
20.
Zhong, Yaozong, Qian Sun, Hui Yang, et al.. (2019). Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer. IEEE Electron Device Letters. 40(9). 1495–1498. 57 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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