Jae‐Hoon Lee

1.5k total citations
62 papers, 990 citations indexed

About

Jae‐Hoon Lee is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Jae‐Hoon Lee has authored 62 papers receiving a total of 990 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Condensed Matter Physics, 33 papers in Electronic, Optical and Magnetic Materials and 25 papers in Electrical and Electronic Engineering. Recurrent topics in Jae‐Hoon Lee's work include GaN-based semiconductor devices and materials (55 papers), Ga2O3 and related materials (33 papers) and ZnO doping and properties (23 papers). Jae‐Hoon Lee is often cited by papers focused on GaN-based semiconductor devices and materials (55 papers), Ga2O3 and related materials (33 papers) and ZnO doping and properties (23 papers). Jae‐Hoon Lee collaborates with scholars based in South Korea, France and United States. Jae‐Hoon Lee's co-authors include Jung‐Hee Lee, Ran Yacoby, Shai M. Chester, Silviu S. Pufu, Ki‐Sik Im, Dong‐Seok Kim, Chanho Park, Jong Kyu Kim, Chungmo Yang and Jong‐Lam Lee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Astrophysical Journal.

In The Last Decade

Jae‐Hoon Lee

62 papers receiving 951 citations

Peers

Jae‐Hoon Lee

CMP

EEE

EOMM

AMPO

T. Dahm Germany

M. Scheuermann United States

Abhishek Banerjee Belgium

Z. G. Ivanov Sweden

Christian Copetti Germany

J.C. Villégier France

J. Cuppens Belgium

J. Moritz France

G. Kunkel Germany

R. A. Doyle United Kingdom

T. Dahm Germany

Jae‐Hoon Lee

1.2k ×1.6

CMP

232 ×0.5

EEE

564 ×1.6

EOMM

114 ×0.4

519 ×2.4

AMPO

Citations per year, relative to Jae‐Hoon Lee Jae‐Hoon Lee (= 1×) peers T. Dahm

Countries citing papers authored by Jae‐Hoon Lee

Since Specialization

Citations

This map shows the geographic impact of Jae‐Hoon Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jae‐Hoon Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jae‐Hoon Lee more than expected).

Fields of papers citing papers by Jae‐Hoon Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jae‐Hoon Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jae‐Hoon Lee. The network helps show where Jae‐Hoon Lee may publish in the future.

Co-authorship network of co-authors of Jae‐Hoon Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Jae‐Hoon Lee. A scholar is included among the top collaborators of Jae‐Hoon Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jae‐Hoon Lee. Jae‐Hoon Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lee, Jae‐Hoon, et al.. (2024). A Strong Gravitational Lens Is Worth a Thousand Dark Matter Halos: Inference on Small-scale Structure Using Sequential Methods. The Astrophysical Journal. 975(2). 297–297. 2 indexed citations

Chang, Sung‐Jae, Sang-Youl Lee, Hwan-Hee Jeong, et al.. (2021). Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors. Crystals. 11(11). 1414–1414. 5 indexed citations

Lee, Jae‐Hoon & Ki‐Sik Im. (2021). Growth of High Quality GaN on Si (111) Substrate by Using Two-Step Growth Method for Vertical Power Devices Application. Crystals. 11(3). 234–234. 15 indexed citations

Lee, Jae‐Hoon, Ki‐Sik Im, Jong Kyu Kim, & Jung‐Hee Lee. (2018). Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al₂O₃ Layer. IEEE Transactions on Electron Devices. 66(1). 324–329. 13 indexed citations

Im, Ki‐Sik, et al.. (2016). Performance enhancement of AlGaN/GaN nanochannel omega-FinFET. Solid-State Electronics. 129. 196–199. 3 indexed citations

Lee, Dong‐Gi, Young‐Woo Jo, Dong-Hyeok Son, et al.. (2016). Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor. Journal of Nanoscience and Nanotechnology. 16(5). 5049–5052. 5 indexed citations

Im, Ki‐Sik, Hee‐Sung Kang, Yohan Park, et al.. (2016). Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel. Solid-State Electronics. 120. 47–51. 12 indexed citations

Im, Ki‐Sik, Chul‐Ho Won, Dong-Hyeok Son, et al.. (2016). Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer. Journal of Crystal Growth. 441. 41–45. 22 indexed citations

Lee, Jae‐Hoon, et al.. (2015). トップダウンアプローチによるAlGaN/GaN Ω形状ナノワイヤフィン状FETの作製. Applied Physics Express. 8(6). 1–66501. 1 indexed citations

10.

Lee, Jae‐Hoon, et al.. (2012). Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer. IEEE Electron Device Letters. 33(4). 492–494. 7 indexed citations

11.

Kim, Dong‐Seok, Tae‐Hyeon Kim, Chul‐Ho Won, et al.. (2011). Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method. Microelectronic Engineering. 88(7). 1221–1224. 6 indexed citations

12.

Lee, Jae‐Hoon & Jung‐Hee Lee. (2009). Enhanced performance of GaN-based light emitting diode with isoelectronic Al doping layer. Journal of Applied Physics. 105(6). 15 indexed citations

13.

Lee, Jae‐Hoon, et al.. (2008). Enhancement of InGaN-Based Vertical LED With Concavely Patterned Surface Using Patterned Sapphire Substrate. IEEE Photonics Technology Letters. 20(5). 345–347. 38 indexed citations

14.

Lee, Jae‐Hoon, et al.. (2007). Growth and Characteristics of InGaN/GaN Films Grown on Hemispherical Patterned Sapphire by Using MOCVD. Journal of the Korean Physical Society. 51. 4 indexed citations

15.

Cheong, Cheolho, Young Hoon Sung, Jae‐Hoon Lee, et al.. (2006). Role of INK4a locus in normal eye development and cataract genesis. Mechanisms of Ageing and Development. 127(7). 633–638. 13 indexed citations

16.

Jeon, Chang Min, et al.. (2006). Thermally stable AlGaN∕GaN heterostructure field-effect transistor with IrO2 gate electrode. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(3). 1303–1307. 10 indexed citations

17.

Kim, T.W., et al.. (2004). Magnetotransport, optical, and electronic subband properties in AlxGa1−xN/AlN/GaN heterostructures. Solid State Communications. 132(1). 67–70. 5 indexed citations

18.

Lee, Jae‐Hoon, et al.. (2003). Fabrication of AlGaN/GaN MIS‐HFET using an Al ₂ O ₃ high k dielectric. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2351–2354. 38 indexed citations

19.

Hang, Da‐Ren, et al.. (2003). Electrically detected and microwave-modulated Shubnikov–de Haas oscillations in an Al0.4Ga0.6N/GaN heterostructure. Journal of Applied Physics. 93(4). 2055–2058. 19 indexed citations

20.

Lee, Jae‐Hoon, Jong‐Hyun Kim, Sung‐Bum Bae, et al.. (2002). Improvement of Electrical Properties of MOCVD Grown Al _x Ga _{1— x} N/GaN Heterostructure with Isoelectronic Al‐Doped Channel. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 240–243. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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