Tae‐Hyeon Kim

1.7k total citations
91 papers, 1.4k citations indexed

About

Tae‐Hyeon Kim is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Materials Chemistry. According to data from OpenAlex, Tae‐Hyeon Kim has authored 91 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 72 papers in Electrical and Electronic Engineering, 22 papers in Cellular and Molecular Neuroscience and 9 papers in Materials Chemistry. Recurrent topics in Tae‐Hyeon Kim's work include Advanced Memory and Neural Computing (59 papers), Ferroelectric and Negative Capacitance Devices (47 papers) and Neuroscience and Neural Engineering (22 papers). Tae‐Hyeon Kim is often cited by papers focused on Advanced Memory and Neural Computing (59 papers), Ferroelectric and Negative Capacitance Devices (47 papers) and Neuroscience and Neural Engineering (22 papers). Tae‐Hyeon Kim collaborates with scholars based in South Korea, United States and Thailand. Tae‐Hyeon Kim's co-authors include Byung‐Gook Park, Hyungjin Kim, Sungjoon Kim, Sungjun Kim, Min‐Hwi Kim, Jinwoo Park, Seongjae Cho, Dong Keun Lee, Jeong‐Sook Park and Shimeng Yu and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

Tae‐Hyeon Kim

85 papers receiving 1.4k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Tae‐Hyeon Kim 1.0k 399 138 130 124 91 1.4k
Sangho Shin 1.6k 1.5× 535 1.3× 84 0.6× 160 1.2× 110 0.9× 81 1.9k
Wei Wen 613 0.6× 126 0.3× 413 3.0× 223 1.7× 114 0.9× 63 1.4k
Yu‐Hsuan Lin 573 0.5× 154 0.4× 52 0.4× 215 1.7× 65 0.5× 71 841
Tony F. Wu 1.2k 1.1× 154 0.4× 186 1.3× 262 2.0× 47 0.4× 38 1.5k
Zhaoqing Wang 415 0.4× 161 0.4× 226 1.6× 171 1.3× 64 0.5× 31 969
Lingjie Kong 708 0.7× 111 0.3× 39 0.3× 125 1.0× 93 0.8× 104 2.1k
Ching‐Yi Chen 672 0.6× 74 0.2× 187 1.4× 621 4.8× 125 1.0× 68 1.5k
В. А. Демин 1.3k 1.2× 742 1.9× 178 1.3× 291 2.2× 320 2.6× 107 1.7k
Haider Abbas 1.3k 1.2× 580 1.5× 101 0.7× 168 1.3× 367 3.0× 71 1.6k
Pinyi Li 456 0.4× 111 0.3× 88 0.6× 40 0.3× 36 0.3× 26 913

Countries citing papers authored by Tae‐Hyeon Kim

Since Specialization
Citations

This map shows the geographic impact of Tae‐Hyeon Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tae‐Hyeon Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tae‐Hyeon Kim more than expected).

Fields of papers citing papers by Tae‐Hyeon Kim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tae‐Hyeon Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tae‐Hyeon Kim. The network helps show where Tae‐Hyeon Kim may publish in the future.

Co-authorship network of co-authors of Tae‐Hyeon Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Tae‐Hyeon Kim. A scholar is included among the top collaborators of Tae‐Hyeon Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tae‐Hyeon Kim. Tae‐Hyeon Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Tae‐Hyeon, et al.. (2026). Inconel 625/Al2O3 functionally graded materials manufactured by directed energy deposition. Journal of Materials Research and Technology. 40. 3509–3520.
2.
3.
Kim, Sungjoon, et al.. (2024). Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System. Advanced Materials Technologies. 9(11). 13 indexed citations
4.
Kim, Tae‐Hyeon, et al.. (2024). Threshold learning algorithm for memristive neural network with binary switching behavior. Neural Networks. 176. 106355–106355. 7 indexed citations
5.
Kim, Tae‐Hyeon, et al.. (2023). Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices. Chaos Solitons & Fractals. 170. 113359–113359. 9 indexed citations
6.
Yu, Shimeng, et al.. (2023). Nonvolatile Capacitive Synapse: Device Candidates for Charge Domain Compute-In-Memory. 1(2). 23–32. 23 indexed citations
7.
Kim, Tae‐Hyeon, Yuan-Chun Luo, Halid Mulaosmanovic, et al.. (2023). Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse. IEEE Electron Device Letters. 44(10). 1628–1631. 31 indexed citations
8.
Kim, Min‐Hwi, Sungmin Hwang, Tae‐Hyeon Kim, et al.. (2021). A More Hardware-Oriented Spiking Neural Network Based on Leading Memory Technology and Its Application With Reinforcement Learning. IEEE Transactions on Electron Devices. 68(9). 4411–4417. 14 indexed citations
9.
10.
Ryu, Jiho, Boram Kim, Fayyaz Hussain, et al.. (2020). Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering. IEEE Access. 8. 130678–130686. 54 indexed citations
11.
Lee, Dong Keun, Min‐Hwi Kim, Tae‐Hyeon Kim, et al.. (2020). Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation. IEEE Transactions on Electron Devices. 68(1). 438–442. 7 indexed citations
12.
Kim, Min‐Hwi, Tae‐Hyeon Kim, Dong Keun Lee, et al.. (2020). Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation. IEEE Access. 8. 228720–228730. 9 indexed citations
13.
Lee, Dong Keun, Min‐Hwi Kim, Tae‐Hyeon Kim, et al.. (2020). Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application. Electronics. 9(8). 1228–1228. 5 indexed citations
14.
Kim, Tae‐Hyeon, Min‐Hwi Kim, Dong Keun Lee, et al.. (2020). Fabrication and Characterization of TiO x Memristor for Synaptic Device Application. IEEE Transactions on Nanotechnology. 19. 475–480. 28 indexed citations
15.
Min, Kyung Kyu, Min‐Hwi Kim, Tae‐Hyeon Kim, et al.. (2020). Investigation of the Thermal Recovery From Reset Breakdown of a SiN x -Based RRAM. IEEE Transactions on Electron Devices. 67(4). 1600–1605. 11 indexed citations
16.
Lee, Dong Keun, Min‐Hwi Kim, Tae‐Hyeon Kim, et al.. (2019). Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation. Solid-State Electronics. 154. 31–35. 12 indexed citations
17.
Kim, Min‐Hwi, Sungjun Kim, Tae‐Hyeon Kim, et al.. (2018). Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current. IEEE Transactions on Nanotechnology. 17(4). 824–828. 22 indexed citations
18.
Kim, Min‐Hwi, Tae‐Hyeon Kim, Dong Keun Lee, et al.. (2018). Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application. Solid-State Electronics. 150. 60–65. 31 indexed citations
19.
Kim, Sungjun, Yao‐Feng Chang, Min‐Hwi Kim, et al.. (2017). Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device. Physical Chemistry Chemical Physics. 19(29). 18988–18995. 27 indexed citations
20.
Kim, Tae‐Hyeon, et al.. (1999). Estimation of Real Boundary with Subpixel Accuracy in Digital Imagery. Journal of the Korean Society for Precision Engineering. 16(8). 16–22. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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