Jong‐Bong Ha

908 total citations
21 papers, 788 citations indexed

About

Jong‐Bong Ha is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jong‐Bong Ha has authored 21 papers receiving a total of 788 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Condensed Matter Physics, 15 papers in Electrical and Electronic Engineering and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jong‐Bong Ha's work include GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (12 papers) and Semiconductor materials and devices (12 papers). Jong‐Bong Ha is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Ga2O3 and related materials (12 papers) and Semiconductor materials and devices (12 papers). Jong‐Bong Ha collaborates with scholars based in South Korea and France. Jong‐Bong Ha's co-authors include Jung‐Hee Lee, Ki-Won Kim, Dong‐Seok Kim, Jaejoon Oh, Jaikwang Shin, Ki‐Sik Im, Hee‐Sung Kang, U‐In Chung, Jongseob Kim and Hyoji Choi and has published in prestigious journals such as Journal of Physics D Applied Physics, Thin Solid Films and Japanese Journal of Applied Physics.

In The Last Decade

Jong‐Bong Ha

21 papers receiving 765 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jong‐Bong Ha South Korea 12 668 596 418 191 122 21 788
Dave Bour United States 8 653 1.0× 601 1.0× 312 0.7× 130 0.7× 153 1.3× 10 751
Hee‐Sung Kang South Korea 13 430 0.6× 480 0.8× 245 0.6× 108 0.6× 132 1.1× 37 585
R. Stoklas Slovakia 16 725 1.1× 710 1.2× 426 1.0× 231 1.2× 175 1.4× 58 903
Will Mecouch United States 10 368 0.6× 313 0.5× 273 0.7× 178 0.9× 89 0.7× 18 505
Michele Esposto Italy 11 554 0.8× 449 0.8× 279 0.7× 132 0.7× 147 1.2× 18 621
Ki‐Sik Im South Korea 18 937 1.4× 877 1.5× 422 1.0× 216 1.1× 137 1.1× 69 1.1k
Jiacheng Lei Hong Kong 15 550 0.8× 540 0.9× 272 0.7× 137 0.7× 91 0.7× 22 667
Marcin Miczek Japan 7 548 0.8× 511 0.9× 348 0.8× 116 0.6× 81 0.7× 9 601
Yunyou Lu Hong Kong 18 1.1k 1.7× 950 1.6× 651 1.6× 229 1.2× 175 1.4× 32 1.2k
Y. Dora United States 9 818 1.2× 681 1.1× 426 1.0× 165 0.9× 156 1.3× 12 886

Countries citing papers authored by Jong‐Bong Ha

Since Specialization
Citations

This map shows the geographic impact of Jong‐Bong Ha's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jong‐Bong Ha with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jong‐Bong Ha more than expected).

Fields of papers citing papers by Jong‐Bong Ha

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jong‐Bong Ha. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jong‐Bong Ha. The network helps show where Jong‐Bong Ha may publish in the future.

Co-authorship network of co-authors of Jong‐Bong Ha

This figure shows the co-authorship network connecting the top 25 collaborators of Jong‐Bong Ha. A scholar is included among the top collaborators of Jong‐Bong Ha based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jong‐Bong Ha. Jong‐Bong Ha is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Jongseob, Injun Hwang, Hyoji Choi, et al.. (2013). High threshold voltage p-GaN gate power devices on 200 mm Si. 315–318. 18 indexed citations
2.
Bae, Jong‐Ho, Jongmin Shin, Hyuck‐In Kwon, et al.. (2013). Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT. 31.6.1–31.6.4. 10 indexed citations
3.
Kang, Hee‐Sung, M. Siva Pratap Reddy, Dong‐Seok Kim, et al.. (2013). Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal–insulator–semiconductor capacitors with post-deposition annealing. Journal of Physics D Applied Physics. 46(15). 155101–155101. 56 indexed citations
4.
Hwang, Injun, Jongseob Kim, Hyuk Choi, et al.. (2013). p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current. IEEE Electron Device Letters. 34(2). 202–204. 236 indexed citations
5.
Bae, Jong‐Ho, Injun Hwang, Jongmin Shin, et al.. (2012). Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT. 13.2.1–13.2.4. 20 indexed citations
6.
Hwang, Injun, Hyoji Choi, Jaewon Lee, et al.. (2012). 1.6kV, 2.9 m&#x2126; cm<sup>2</sup> normally-off p-GaN HEMT device. 41–44. 32 indexed citations
7.
Kim, Dong‐Seok, Tae‐Hyeon Kim, Chul‐Ho Won, et al.. (2011). Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method. Microelectronic Engineering. 88(7). 1221–1224. 6 indexed citations
8.
Kim, Dong‐Seok, Ki-Won Kim, Ki‐Sik Im, et al.. (2011). High Performance in a Normally-off Al2O3/GaN MOSFET Based on an AlGaN/GaN Heterostructure with a p-GaN Buffer Layer. Journal of the Korean Physical Society. 58(5(2)). 1500–1504. 12 indexed citations
9.
Kim, Ki-Won, Dong‐Seok Kim, Hee‐Sung Kang, et al.. (2011). Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET. IEEE Electron Device Letters. 32(10). 1376–1378. 151 indexed citations
10.
Kim, Dong‐Seok, Jong‐Bong Ha, Hee‐Sung Kang, et al.. (2010). Normally-off operation of Al 2 O 3 /GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer. 229–231. 1 indexed citations
11.
Im, Ki‐Sik, et al.. (2010). AlGaN/GaN‐based normally‐off GaN MOSFET with stress controlled 2DEG source and drain. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2013–2015. 4 indexed citations
12.
Ha, Jong‐Bong, Dong‐Seok Kim, Ki‐Sik Im, et al.. (2010). Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing. Japanese Journal of Applied Physics. 49(12R). 126501–126501. 1 indexed citations
13.
Ha, Jong‐Bong, et al.. (2010). Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique. IEEE Electron Device Letters. 31(8). 848–850. 8 indexed citations
14.
Im, Ki‐Sik, Jong‐Bong Ha, Ki-Won Kim, et al.. (2010). Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate. IEEE Electron Device Letters. 31(3). 192–194. 132 indexed citations
15.
Ha, Jong‐Bong, et al.. (2009). Interface Properties of Nickel-silicide Films Deposited by UsingPlasma-assisted Atomic Layer Deposition. Journal of the Korean Physical Society. 55(3(1)). 1153–1157. 14 indexed citations
16.
Ha, Jong‐Bong, et al.. (2009). Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film. Current Applied Physics. 10(1). 41–46. 12 indexed citations
17.
Ostermaier, Clemens, Ki-Won Kim, Jong‐Bong Ha, et al.. (2008). Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer. Japanese Journal of Applied Physics. 47(4S). 2824–2824. 11 indexed citations
18.
Ostermaier, Clemens, et al.. (2008). Interface characterization of ALD deposited Al2O3 on GaN by CV method. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1992–1994. 35 indexed citations
19.
Yang, Chungmo, et al.. (2007). Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition. Japanese Journal of Applied Physics. 46(4S). 1981–1981. 20 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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