S. J. Sque

1.2k citations

27 papers · 970 indexed · h-index 13

Materials Chemistry top 5%
Electrical and Electronic Engineering top 10%
Geophysics top 5%
Atomic and Molecular Physics, and Optics top 10%
Mechanics of Materials top 10%

Co-authors: R. Jones P. R. Briddon Jonathan P. Goss J. P. Goss M. J. Rayson Florin Udrea J.A. Croon Giorgia Longobardi
Topics: Diamond and Carbon-based Materials Research (15 papers)Semiconductor materials and devices (10 papers)GaN-based semiconductor devices and materials (7 papers)
Cited by: Geophysics Materials Chemistry Condensed Matter Physics
Journals: Physical Review Letters Applied Physics Letters Physical Review B
Partner nations: United Kingdom Netherlands Sweden

In The Last Decade

S. J. Sque

27 papers receiving 940 citations

Peers

Countries citing papers authored by S. J. Sque

Since Specialization

Citations

This map shows the geographic impact of S. J. Sque's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. J. Sque with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. J. Sque more than expected).

Fields of papers citing papers by S. J. Sque

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. J. Sque. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. J. Sque. The network helps show where S. J. Sque may publish in the future.

Co-authorship network of co-authors of S. J. Sque

This figure shows the co-authorship network connecting the top 25 collaborators of S. J. Sque. A scholar is included among the top collaborators of S. J. Sque based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. J. Sque. S. J. Sque is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage 2019 ·IEEE Transactions on Electron Devices ·(unknown),(unknown),S. J. Sque,(unknown),Theo Smedes	10
2	Gate-Lifted nMOS ESD Protection Device Triggered by a p-n-p in Series With a Diode 2019 ·IEEE Transactions on Electron Devices ·(unknown),S. J. Sque,(unknown),Theo Smedes	5
3	Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high‐voltage transistors via measurements and technology computer‐aided design simulations of transfer characteristics of metal–insulator–semiconductor field‐effect transistors and high‐electron‐mobility transistors 2015 ·IET Power Electronics ·Giorgia Longobardi,Florin Udrea,S. J. Sque,J.A. Croon,(unknown),Jan Šonský	3
4	Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs 2014 ·IEEE Electron Device Letters ·Giorgia Longobardi,Florin Udrea,S. J. Sque,G.A.M. Hurkx,J.A. Croon,Ettore Napoli,Jan Šonský	44
5	The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET — Experiment and TCAD simulations 2014 ·Giorgia Longobardi,Florin Udrea,S. J. Sque,J.A. Croon,(unknown),Jan Šonský	7
6	The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling 2014 ·Giorgia Longobardi,Florin Udrea,S. J. Sque,J.A. Croon,(unknown),Jan Šonský	11
7	Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures 2014 ·Applied Physics Letters ·(unknown),J.J.T.M. Donkers,S. J. Sque,S. B. S. Heil,D. J. Gravesteijn,Frank J.R. Rietveld,Jurriaan Schmitz	23
8	Threshold behavior of the drift region: The missing piece in LDMOS modeling 2013 ·S. J. Sque,A.J. Scholten,A.C.T. Aarts,D.B.M. Klaassen	7
9	Modelling 2DEG charges in AlGaN/GaN heterostructures 2012 ·Giorgia Longobardi,Florin Udrea,S. J. Sque,J.A. Croon,(unknown),Ettore Napoli,Jan Šonský	6
10	Modelling the effect of doping metallic carbon nanotubes on their ability to transfer‐dope diamond 2007 ·physica status solidi (a) ·S. J. Sque,Chris Ewels,R. Jones,P. R. Briddon	5
11	Transfer doping of diamond: Buckminsterfullerene on hydrogenated, hydroxylated, and oxygenated diamond surfaces 2006 ·Journal of Materials Science Materials in Electronics ·S. J. Sque,R. Jones,S. Öberg,P. R. Briddon	6
12	Ab initiostudy of CsI and its surface 2006 ·Physical Review B ·R. M. Ribeiro,J. Coutinho,V. J. B. Torres,R. Jones,S. J. Sque,S. Öberg,M. J. Shaw,P. R. Briddon	13
13	Theoretical study on the adsorption of armchair carbon nanotubes on the hydrogenated surface of diamond 2006 ·physica status solidi (a) ·S. J. Sque,R. Jones,Sven Öberg,P. R. Briddon	4
14	First-principles study of C₆₀ and C₆₀F₃₆ as transfer dopants for p-type diamond 2005 ·Journal of Physics Condensed Matter ·S. J. Sque,R. Jones,J. P. Goss,P. R. Briddon,Sven Öberg	20
15	Hydrogenation and oxygenation of the (100) diamond surface and the consequences for transfer doping 2005 ·physica status solidi (a) ·S. J. Sque,R. Jones,P. R. Briddon	22
16	Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes 2004 ·Physical Review Letters ·S. J. Sque,R. Jones,Jonathan P. Goss,P. R. Briddon	81
17	Boron-hydrogen complexes in diamond 2004 ·Physical Review B ·J. P. Goss,P. R. Briddon,S. J. Sque,R. Jones	49
18	Donor and acceptor states in diamond 2004 ·Diamond and Related Materials ·Jonathan P. Goss,P. R. Briddon,R. Jones,S. J. Sque	128
19	Shallow donors in diamond: pnictogen and chalcogen hydrogen defects 2003 ·Physica B Condensed Matter ·S. J. Sque,R. Jones,J. P. Goss,P. R. Briddon	8
20	The vacancy–nitrogen–hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material 2003 ·Journal of Physics Condensed Matter ·J. P. Goss,P. R. Briddon,R. Jones,S. J. Sque	37

About S. J. Sque

S. J. Sque is a scholar working on Condensed Matter Physics, Geophysics and Materials Chemistry, having authored 27 papers that have together received 970 indexed citations. Recurring topics across this work include Diamond and Carbon-based Materials Research (15 papers), Semiconductor materials and devices (10 papers) and GaN-based semiconductor devices and materials (7 papers). The work is most often cited by research in Geophysics (253 citations), Materials Chemistry (812 citations) and Condensed Matter Physics (113 citations). S. J. Sque has collaborated with scholars based in United Kingdom, Netherlands and Sweden. Frequent co-authors include R. Jones, P. R. Briddon, P. R. Briddon, Jonathan P. Goss, J. P. Goss, M. J. Rayson, J. P. Goss, Florin Udrea, J.A. Croon and Giorgia Longobardi. Their work appears in journals such as Physical Review Letters, Applied Physics Letters and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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