P.A. Houston

2.7k citations

84 papers · 1.0k indexed · h-index 17

Electrical and Electronic Engineering top 5%
Atomic and Molecular Physics, and Optics top 5%
Condensed Matter Physics top 5%
Electronic, Optical and Magnetic Materials top 10%
Materials Chemistry

Co-authors: W. S. Tan Michael J. Uren R.S. Balmer P.N. Robson Navin Chand T. Martin H. K. Yow Trevor Martin
Topics: Semiconductor materials and devices (44 papers)Semiconductor Quantum Structures and Devices (43 papers)Advancements in Semiconductor Devices and Circuit Design (38 papers)
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Power Electronics
Partner nations: United Kingdom United States Malaysia

In The Last Decade

P.A. Houston

83 papers receiving 981 citations

Peers

Countries citing papers authored by P.A. Houston

Since Specialization

Citations

This map shows the geographic impact of P.A. Houston's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.A. Houston with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.A. Houston more than expected).

Fields of papers citing papers by P.A. Houston

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.A. Houston. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.A. Houston. The network helps show where P.A. Houston may publish in the future.

Co-authorship network of co-authors of P.A. Houston

This figure shows the co-authorship network connecting the top 25 collaborators of P.A. Houston. A scholar is included among the top collaborators of P.A. Houston based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.A. Houston. P.A. Houston is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Understanding Philanthropy in Times of Crisis: The Role of Giving Back During COVID-19 2021 ·IUScholarWorks (Indiana University) ·(unknown),(unknown),P.A. Houston,(unknown)	2
2	Band alignments of sputtered dielectrics on GaN 2019 ·Journal of Physics D Applied Physics ·(unknown),P. Das,Jonathan D. Major,(unknown),(unknown),Rajat Mahapatra,(unknown),(unknown),P.A. Houston,S. Hall,V.R. Dhanak,Ivona Z. Mitrović	7
3	Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs 2018 ·Journal of Applied Physics ·(unknown),(unknown),(unknown),Ivor Guiney,(unknown),Sheng Jiang,(unknown),Penglei Li,D. J. Wallis,C. J. Humphreys,Paul R. Chalker,P.A. Houston	7
4	Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors 2018 ·Journal of Applied Physics ·Fengzai Tang,(unknown),Ivor Guiney,Martin Frentrup,J. S. Barnard,Giorgio Divitini,(unknown),T. Martin,Paul A.J. Bagot,Michael P. Moody,C. J. Humphreys,P.A. Houston,Rachel A. Oliver,D. J. Wallis	3
5	Subthreshold Mobility in AlGaN/GaN HEMTs 2016 ·IEEE Transactions on Electron Devices ·(unknown),Michael J. Uren,Kean Boon Lee,P.A. Houston,D. J. Wallis,Ivor Guiney,C. J. Humphreys,(unknown),Jan Šonský,Martin Kuball	5
6	Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs 2015 ·IEEE Transactions on Electron Devices ·(unknown),Serge Karboyan,Michael J. Uren,Kean Boon Lee,P.A. Houston,D. J. Wallis,Ivor Guiney,C. J. Humphreys,Martin Kuball	20
7	Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V 2015 ·Applied Physics Express ·(unknown),Ivor Guiney,Sheng Jiang,(unknown),(unknown),D. J. Wallis,Michael J. Uren,Martin Kuball,C. J. Humphreys,P.A. Houston	12
8	Highly Sensitive UV Detection Mechanism in AlGaN/GaN HEMTs 2013 ·IEEE Transactions on Electron Devices ·(unknown),P.A. Houston	41
9	High current InP/InGaAs evanescently coupled waveguide phototransistor 2005 ·IEE Proceedings - Optoelectronics ·(unknown),Chee Hing Tan,P.A. Houston,A. B. Krysa	4
10	Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors 2004 ·Journal of Electronic Materials ·W. S. Tan,P.A. Houston,G. Hill,R. Airey,(unknown)	23
11	Temperature dependence of electron impact ionization in In0.53Ga0.47As 2004 ·Applied Physics Letters ·Chee Hing Tan,G.J. Rees,P.A. Houston,Jo Shien Ng,(unknown),J.P.R. David	15
12	Surface passivation of InP/InGaAs heterojunction bipolar transistors 2004 ·Semiconductor Science and Technology ·(unknown),Chee Hing Tan,P.A. Houston,A. B. Krysa,Abbès Tahraoui	6
13	High-frequency heterojunction bipolar transistor device design and technology 2000 ·Electronics & Communications Engineering Journal ·P.A. Houston	2
14	Polarization effects in near-ground-state quantum wire lasers 2000 ·Applied Physics Letters ·(unknown),J. Woodhead,P.A. Houston,A. G. Cullis,G. Hill,J.S. Roberts	1
15	Analysis of the temperature dependence of current gain in heterojunction bipolar transistors 1997 ·IEEE Transactions on Electron Devices ·(unknown),P.A. Houston,H. K. Yow	9
16	New nonthermal mechanism for negative differential resistance in heterojunction bipolar transistors 1993 ·Applied Physics Letters ·(unknown),P.A. Houston	4
17	Progress On InP/InGaAs(P) Heterojunction Bipolar Transistors 1988 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown),P.A. Houston,P.N. Robson	1
18	Novel high-speed In _0.53 Ga _0.47 As/InP lateral phototransistor 1985 ·Electronics Letters ·Navin Chand,P.A. Houston,P.N. Robson	3
19	Selective area LPE growth and open tube diffusion in InGaAs/InP 1985 ·Journal of Electronic Materials ·Naresh Chand,P.A. Houston	7
20	A novel electro-optically controlled directional-coupler switch in GaAs epitaxial layers at 1.15 µm 1982 ·IEEE Transactions on Electron Devices ·T.M. Benson,T. Murotani,P.N. Robson,P.A. Houston	6

About P.A. Houston

P.A. Houston is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 84 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (44 papers), Semiconductor Quantum Structures and Devices (43 papers) and Advancements in Semiconductor Devices and Circuit Design (38 papers). The work is most often cited by research in Condensed Matter Physics (442 citations), Atomic and Molecular Physics, and Optics (543 citations) and Electrical and Electronic Engineering (850 citations). P.A. Houston has collaborated with scholars based in United Kingdom, United States and Malaysia. Frequent co-authors include W. S. Tan, Michael J. Uren, R.S. Balmer, P.N. Robson, Navin Chand, T. Martin, H. K. Yow, Trevor Martin, J.P.R. David and P. W. Fry. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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