Fangzhou Wang

564 total citations
49 papers, 399 citations indexed

About

Fangzhou Wang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Fangzhou Wang has authored 49 papers receiving a total of 399 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 36 papers in Condensed Matter Physics and 22 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Fangzhou Wang's work include GaN-based semiconductor devices and materials (36 papers), Silicon Carbide Semiconductor Technologies (22 papers) and Ga2O3 and related materials (18 papers). Fangzhou Wang is often cited by papers focused on GaN-based semiconductor devices and materials (36 papers), Silicon Carbide Semiconductor Technologies (22 papers) and Ga2O3 and related materials (18 papers). Fangzhou Wang collaborates with scholars based in China, Australia and Singapore. Fangzhou Wang's co-authors include Wanjun Chen, Ruize Sun, Bo Zhang, Zeheng Wang, Chao Liu, Qi Zhou, Xiaorui Xu, Zhaoji Li, Yun Xia and Xiaochuan Deng and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Power Electronics and Advanced Science.

In The Last Decade

Fangzhou Wang

44 papers receiving 380 citations

Peers

Countries citing papers authored by Fangzhou Wang

Since Specialization

Citations

This map shows the geographic impact of Fangzhou Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fangzhou Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fangzhou Wang more than expected).

Fields of papers citing papers by Fangzhou Wang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fangzhou Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fangzhou Wang. The network helps show where Fangzhou Wang may publish in the future.

Co-authorship network of co-authors of Fangzhou Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Fangzhou Wang. A scholar is included among the top collaborators of Fangzhou Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fangzhou Wang. Fangzhou Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	First Experimental Demonstration of TiN_xO_y Resistive Field Plate on p-GaN HEMTs With Simultaneously Enhanced BV and R_on 2025 ·IEEE Transactions on Electron Devices ·(unknown), Wanjun Chen, Fangzhou Wang, (unknown), Xiaoming Wang, Changwei Pan, (unknown), Chao Liu, Ruize Sun, Xiaochuan Deng, (unknown), (unknown), Haiqiang Jia, Hong Chen, Bo Zhang	1
2	Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination 2024 ·Applied Physics Letters ·Xiaorui Xu, (unknown), (unknown), Duanyang Chen, Fangzhou Wang, (unknown), Hongji Qi, (unknown), Haizhong Zhang, Xiaoqiang Lu	7
3	On the Abnormal Reduction and Recovery of Dynamic R _ON Under UIS Stress in Schottky p-GaN Gate HEMTs 2023 ·IEEE Transactions on Power Electronics ·Chao Liu, (unknown), Ruize Sun, (unknown), Wanjun Chen, (unknown), Fangzhou Wang, Xiaoming Wang, (unknown), Bo Zhang	4
4	Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT 2023 ·IEEE Transactions on Electron Devices ·Fangzhou Wang, Wanjun Chen, Yang Wang, Ruize Sun, (unknown), (unknown), Xiaohui Wang, (unknown), (unknown), Xiaorui Xu, Chao Liu, Zeheng Wang, Haiqiang Jia, Hong Chen, Bo Zhang	3
5	Magnetic domain-dependent ultrafast optical demagnetization in stripe domain films 2023 ·Journal of Physics D Applied Physics ·Xiaowen Chen, Roman Adam, Fangzhou Wang, (unknown), Lining Pan, Chengkun Song, (unknown), (unknown), Qiuyue Li, Jing Yu, Jing Zhang, (unknown), Shandong Li, Jie Xu, Mirko Cinchetti, Claus M. Schneider, Derang Cao	3
6	High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current 2022 ·ECS Journal of Solid State Science and Technology ·(unknown), Fangzhou Wang, (unknown), Yujian Zhang, Ruize Sun, (unknown), (unknown), (unknown), Xiaohui Wang, Yang Wang, Miao He, Wanjun Chen, Haiqiang Jia, Hong Chen	3
7	Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs 2022 ·IEEE Electron Device Letters ·(unknown), Wanjun Chen, Ruize Sun, Fangzhou Wang, Chao Liu, Xiaochuan Deng, Zhaoji Li, Bo Zhang	6
8	Ferromagnetic domain wall manipulation using optically induced thermal gradients 2022 ·Journal of Magnetism and Magnetic Materials ·(unknown), Roman Adam, Daniel E. Bürgler, Tomáš Duchoň, Slavomír Nemšák, Fangzhou Wang, (unknown), (unknown), Claus M. Schneider	1
9	Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress 2022 ·IEEE Transactions on Electron Devices ·(unknown), Wanjun Chen, Ruize Sun, Chao Liu, Yun Xia, (unknown), Xiaorui Xu, Fangzhou Wang, (unknown), Yiqiang Chen, Bo Zhang	8
10	Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain 2022 ·IEEE Electron Device Letters ·Ruize Sun, Pan Luo, Fangzhou Wang, Chao Liu, (unknown), Yang Wang, (unknown), Haojun Yang, (unknown), Wanjun Chen, Bo Zhang	13
11	A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability 2021 ·IEEE Transactions on Power Electronics ·Xiaorui Xu, Wanjun Chen, Chao Liu, Ruize Sun, Fangzhou Wang, Zhaoji Li, Bo Zhang	22
12	Generation of terahertz transients from Co2Fe0.4Mn0.6Si-Heusler-alloy/normal-metal nanobilayers excited by femtosecond optical pulses 2021 ·Physical Review Research ·(unknown), Roman Adam, Takahide Kubota, Kōki Takanashi, Derang Cao, Carolin Schmitz‐Antoniak, Daniel E. Bürgler, Fangzhou Wang, (unknown), Genyu Chen, I. Komissarov, H. Hardtdegen, M. Mikulics, Roman Sobolewski, S. Suga, Claus M. Schneider	7
13	Crosstalk Suppression in Monolithic GaN Devices Based on Inverted E-Field Decoupling 2021 ·IEEE Transactions on Electron Devices ·Ruize Sun, (unknown), Wanjun Chen, Chao Liu, Fangzhou Wang, Jianjun Zhou, Zhaoji Li, Bo Zhang	5
14	A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology 2021 ·Semiconductor Science and Technology ·Fangzhou Wang, Wanjun Chen, Zeheng Wang, (unknown), (unknown), Ruize Sun, Qi Zhou, Bo Zhang	4
15	An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps 2020 ·Journal of Physics D Applied Physics ·Fangzhou Wang, Wanjun Chen, Ruize Sun, Zeheng Wang, Qi Zhou, Bo Zhang	18
16	Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism 2020 ·IEEE Transactions on Electron Devices ·Fangzhou Wang, Wanjun Chen, Xiaorui Xu, Ruize Sun, Zeheng Wang, Yun Xia, (unknown), Chao Liu, Qi Zhou, Bo Zhang	23
17	Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors 2020 ·Journal of Physics D Applied Physics ·Fangzhou Wang, Wanjun Chen, Xuan Li, Ruize Sun, Xiaorui Xu, (unknown), Zeheng Wang, Yijun Shi, Yun Xia, Chao Liu, Jianjun Zhou, Qi Zhou, Bo Zhang	19
18	An Ultralow Loss Insulated Gate Bipolar Transistor With Emitter Dual Injection 2019 ·IEEE Transactions on Electron Devices ·Wanjun Chen, Xiaorui Xu, Xiyuan Liu, Chao Liu, (unknown), Nan Chen, Fangzhou Wang, Yuan Wang, Kenan Zhang, Qi Zhou, Zhaoji Li, Bo Zhang	4
19	Analytical Switching Loss Model for GaN-Based Control Switch and Synchronous Rectifier in Low-Voltage Buck Converters 2019 ·IEEE Journal of Emerging and Selected Topics in Power Electronics ·(unknown), Wanjun Chen, Ruize Sun, (unknown), Chao Liu, Yun Xia, Fangzhou Wang, (unknown), (unknown), Qi Zhou, Xiaochuan Deng, Tangsheng Chen, Zhaoji Li, Bo Zhang	30
20	Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent 2018 ·IEEE Transactions on Electron Devices ·(unknown), Wanjun Chen, (unknown), (unknown), Chao Liu, Yun Xia, Jia Li, Fangzhou Wang, (unknown), Qi Zhou, Xiaochuan Deng, Zhaoji Li, Bo Zhang	24

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact