Kean Boon Lee

1.4k total citations
17 papers, 153 citations indexed

About

Kean Boon Lee is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kean Boon Lee has authored 17 papers receiving a total of 153 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 15 papers in Electrical and Electronic Engineering and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kean Boon Lee's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Kean Boon Lee is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Kean Boon Lee collaborates with scholars based in United Kingdom and Singapore. Kean Boon Lee's co-authors include P.A. Houston, Sheng Jiang, Martin Kuball, Michael J. Uren, Ivor Guiney, D. J. Wallis, C. J. Humphreys, Serge Karboyan, Chenqi Zhu and Tao Wang and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Power Electronics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Kean Boon Lee

16 papers receiving 146 citations

Peers

Kean Boon Lee

CMP

EEE

EOMM

AMPO

H.C. Tuan Taiwan

Jialong Yu Taiwan

F.-W. Yao Taiwan

J. Schmidt Germany

Risheng Su Taiwan

Maurizio Moschetti Italy

Tobias Wimmer Germany

Sheng Jiang United Kingdom

Sung‐Jae Chang South Korea

Nathalie Labat France

H.C. Tuan Taiwan

Kean Boon Lee

180 ×1.4

CMP

264 ×2.1

EEE

59 ×1.2

EOMM

24 ×0.6

AMPO

24 ×1.1

Citations per year, relative to Kean Boon Lee Kean Boon Lee (= 1×) peers H.C. Tuan

Countries citing papers authored by Kean Boon Lee

Since Specialization

Citations

This map shows the geographic impact of Kean Boon Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kean Boon Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kean Boon Lee more than expected).

Fields of papers citing papers by Kean Boon Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kean Boon Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kean Boon Lee. The network helps show where Kean Boon Lee may publish in the future.

Co-authorship network of co-authors of Kean Boon Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Kean Boon Lee. A scholar is included among the top collaborators of Kean Boon Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kean Boon Lee. Kean Boon Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

O’Regan, Colm, et al.. (2022). Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique. IEEE Electron Device Letters. 43(10). 1641–1644. 4 indexed citations

Lee, Kean Boon, et al.. (2022). High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing. IEEE Electron Device Letters. 43(4). 533–536. 36 indexed citations

Uren, Michael J., et al.. (2021). Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks. Applied Physics Letters. 119(24). 7 indexed citations

Lee, Kean Boon, et al.. (2020). Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects. Journal of Physics D Applied Physics. 54(10). 105104–105104. 12 indexed citations

Jiang, Sheng, et al.. (2020). A 624 V 5 A All‐GaN Integrated Cascode for Power‐Switching Applications. physica status solidi (a). 217(7).

Jiang, Sheng, et al.. (2019). Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors. IEEE Transactions on Electron Devices. 66(4). 1688–1693. 4 indexed citations

Singh, Manikant, Serge Karboyan, Michael J. Uren, et al.. (2019). Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers. Microelectronics Reliability. 95. 81–86. 6 indexed citations

Hirshy, H., Sheng Jiang, Kean Boon Lee, et al.. (2019). Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers. IEEE Transactions on Microwave Theory and Techniques. 67(7). 2495–2504. 12 indexed citations

Cai, Yuefei, et al.. (2018). Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices. IEEE photonics journal. 10(5). 1–7. 19 indexed citations

10.

Jiang, Sheng, Kean Boon Lee, Ivor Guiney, et al.. (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics. 32(11). 8743–8750. 14 indexed citations

11.

Uren, Michael J., Kean Boon Lee, P.A. Houston, et al.. (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 63(5). 1861–1865. 5 indexed citations

12.

Miaja, Pablo F., Sheng Jiang, Kean Boon Lee, et al.. (2016). Modelling the closely-coupled cascode switching process. Research Explorer (The University of Manchester). 1–8. 1 indexed citations

13.

Karboyan, Serge, Michael J. Uren, Kean Boon Lee, et al.. (2015). Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 62(8). 2464–2469. 20 indexed citations

14.

Lee, Kean Boon, et al.. (2013). The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs. DR-NTU (Nanyang Technological University). 115–118. 1 indexed citations

15.

Li, Yuan, et al.. (2012). On The Operation Mechanism And Device Modeling Of Algan/Gan High Electron Mobility Transistors (Hemts). Zenodo (CERN European Organization for Nuclear Research). 6(9). 910–913. 3 indexed citations

16.

Lee, Kean Boon, et al.. (2012). Dual-metal gate AlGaN/GaN high electron mobility transistors: A theoretical study. 186–188. 5 indexed citations

17.

Sun, Haifeng, et al.. (2012). Theoretical study of short channel effect in highly scaled GaN HEMTs. 204–206. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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