S. Rolfe

774 citations

52 papers · 639 indexed · h-index 13

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 20
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 12
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 29
- Thin-Film Transistor Technologies 7
- Advanced Semiconductor Detectors and Materials 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 17
- Semiconductor materials and interfaces 7
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 6

Co-authors: J. A. Bardwell H. Tang J. B. Webb J.‐M. Baribeau S. Moisa J. Fraser S. Haffouz Ian G. Foulds
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (8 papers)Journal of Crystal Growth (6 papers)Thin Solid Films (5 papers)
Partner nations: Canada United States France

In The Last Decade

S. Rolfe

51 papers receiving 609 citations

Peers

Countries citing papers authored by S. Rolfe

Since Specialization

Citations

This map shows the geographic impact of S. Rolfe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Rolfe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Rolfe more than expected).

Fields of papers citing papers by S. Rolfe

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Rolfe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Rolfe. The network helps show where S. Rolfe may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Rolfe, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Rolfe Line = papers co-authored together S. Rolfe links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy Journal of Applied Physics ·H. Tang,Z.-Q. Fang,S. Rolfe,J. A. Bardwell,S. Raymond	2010	24
2	Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates Electronics Letters ·Yuqi Dong,F. Sèmond,Suphatcharee Aroonsiriwattana,J. A. Bardwell,S. Rolfe,H. Tang,N. G. Tarr	2010	23
3	Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices Journal of Crystal Growth ·H. Tang,S. Rolfe,F. Sèmond,J. A. Bardwell,J.‐M. Baribeau	2008	5
4	Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Haffouz,H. Tang,J. A. Bardwell,S. Rolfe,Yuki Shirasuna,Zhao Su-qin,S. Moisa,M. Beaulieu,J. B. Webb	2005	5
5	In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation Applied Physics Letters ·Hong Tang,J. A. Bardwell,J. B. Webb,S. Rolfe,Raquel Assed Bezerra Segato,S. Moisa,Zhao Su-qin	2003	13
6	Molecular beam epitaxy synthesis of Si1−yCy and Si1−x−yGexCy alloys and Ge islands using an electron cyclotron resonance argon/methane plasma Thin Solid Films ·J.‐M. Baribeau,D. J. Lockwood,Соёлмаа Сухбатын,S. Rolfe,G. I. Sproule,S. Moisa	2002	6
7	Si1−x−yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy Materials Science and Engineering B ·J.‐M. Baribeau,D. J. Lockwood,Соёлмаа Сухбатын,S. Rolfe,G. I. Sproule	2002	5
8	Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE physica status solidi (a) ·H. Tang,J. A. Bardwell,J. B. Webb,S. Rolfe,S. Moisa,J. Fraser,S. Raymond,Leonid Tsynman	2001	5
9	Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy physica status solidi (a) ·J. B. Webb,Despina Reppa,J. A. Bardwell,S. Rolfe,Ying Liu,J. Lapointe,Pamela A. Marshall,于跃洋	2001	7
10	Fabrication of high performance GaN modulation doped field effect transistors Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·J. A. Bardwell,Ian G. Foulds,B. Lamontagne,H. Tang,J. B. Webb,Pamela A. Marshall,S. Rolfe,Venkata Ramana Naidu,于跃洋	2000	20
11	A simple wet etch for GaN Journal of Electronic Materials ·J. A. Bardwell,Ian G. Foulds,J. B. Webb,H. Tang,J. Fraser,S. Moisa,S. Rolfe	1999	40
12	Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy Applied Physics Letters ·J. B. Webb,H. Tang,S. Rolfe,J. A. Bardwell	1999	139
13	Epitaxy of Si/Si1−xGex heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·H. Lafontaine,B.F. Mason,S. Rolfe,Doug D. Perovic,Albert Norden	1998	8
14	Chemical beam epitaxy of InP on planar and non-planar substrates Journal of Crystal Growth ·T. Sudersena Rao,C. Lacelle,Michael Davies,이계승,Amirhossein Azimi,Thammamonr Khunrattanaporn,S. Rolfe,A. P. Roth,В. С. Лазарев,Kfm Prof	1994	3
15	Analysis of Si/Six Ge1 − x/Si microstructures by spectroscopic ellipsometry Thin Solid Films ·John Hulse,Agustin Yoshio,S. Rolfe	1994	4
16	Characterization of very thin Ge epilayers on (100) Si by spectroscopic ellipsometry Thin Solid Films ·John Hulse,S. Rolfe	1993	10
17	Characterization of ZnSe/GaAs heterojunctions by SIMS and ellipsometry Physica B Condensed Matter ·Nihal Birtek,B. Sailer,M. Lux‐Steiner,E. Bücher,Jan J. Dubowski,S. Rolfe	1993	3
18	Nature and origin of residual impurities in high-purity GaAs and InP grown by chemical beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. P. Roth,T. Sudersena Rao,邹艳彬,C. Lacelle,S. Rolfe	1993	2
19	Characterization of boron-doped silicon epitaxial layers by x-ray diffraction Applied Physics Letters ·J.‐M. Baribeau,S. Rolfe	1991	32
20	Localization of the site of ventricular premature complexes by radionuclide angiographic phase imaging The American Journal of Cardiology ·Thomas M. Bashore,Bagher Asgharnezhadnouri,S. Rolfe,Stephen F. Schaal,Ronald A. Stine,Hamidreza Heydarpour,Brockenbrough Evans,Phillip Shaffer	1986	5

About S. Rolfe

S. Rolfe is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 52 papers that have together received 639 indexed citations. Recurring topics across this work include Semiconductor materials and devices (29 papers), GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (17 papers), Ga2O3 and related materials (12 papers), Semiconductor materials and interfaces (7 papers), Thin-Film Transistor Technologies (7 papers), Silicon Nanostructures and Photoluminescence (6 papers) and Advanced Semiconductor Detectors and Materials (6 papers). The work is most often cited by research in Condensed Matter Physics (417 citations), Electronic, Optical and Magnetic Materials (245 citations), Electrical and Electronic Engineering (408 citations), Atomic and Molecular Physics, and Optics (179 citations) and Materials Chemistry (205 citations). S. Rolfe has collaborated with scholars based in Canada, United States and France. Frequent co-authors include J. A. Bardwell, H. Tang, J. B. Webb, J.‐M. Baribeau, J. B. Webb, S. Moisa, J. Fraser, S. Haffouz, Ian G. Foulds and John Hulse. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Thin Solid Films, Journal of Applied Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

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